JPS63311735A - Dot vernier for accurate alignment - Google Patents

Dot vernier for accurate alignment

Info

Publication number
JPS63311735A
JPS63311735A JP62146983A JP14698387A JPS63311735A JP S63311735 A JPS63311735 A JP S63311735A JP 62146983 A JP62146983 A JP 62146983A JP 14698387 A JP14698387 A JP 14698387A JP S63311735 A JPS63311735 A JP S63311735A
Authority
JP
Japan
Prior art keywords
pattern
parts
center
dot
vernier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62146983A
Other languages
Japanese (ja)
Inventor
Hiroyuki Funatsu
舟津 博幸
Takashi Shiichi
私市 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62146983A priority Critical patent/JPS63311735A/en
Publication of JPS63311735A publication Critical patent/JPS63311735A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE:To make it possible to discriminate immediately the shift in the X and Y directions of a first pattern by a method wherein the first resist pattern parts of the first pattern are formed in such a way that the surrounding first resist pattern parts are shifted in the inner side in the center direction by a prescribed fine size centering around the center of the first pattern. CONSTITUTION:First resist pattern parts 11 are formed in such a way that the surrounding first resist pattern parts 11 are located within the inner side in the center direction 0.1 mm by 0.1 mm, for example, centering around the center of a first pattern 10 and window parts 14 of a second pattern 10 are formed at equal intervals. Accordingly, the first pattern 10, for example, is ready-formed in a first layer and by forming the second pattern 12 in a second layer, the matching accuracy of the second layer to the first layer can be seen. In such a way, a coincidence point at some one place where the first resist pattern parts 11 of the first pattern 10 are apart from the centers of the window parts 14 of the second pattern 12 is found out and the amounts of shift in the X and Y directions of the first pattern at that time can be confirmed.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、デバイスのノソターニングにおけるアライ
メント精度を測定するための精良用ドツトバーニアに関
するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a dot vernier for precision use for measuring alignment accuracy in noso turning of a device.

(従来の技術) 第3図は従来の所副櫛梨バーニアの一構成例を示す平面
図で、斜線部かレソストパターンgtであり、斜線のな
い部分がウィンドウ部2(レソストのない部分)である
(Prior art) Fig. 3 is a plan view showing an example of the configuration of a conventional sub-comb pear vernier, in which the hatched part or the rest pattern gt is shown, and the part without the hatching is the window part 2 (the part without the rest). It is.

第3図(4)はセンタ3を中心に上下の@パターンが0
.1μmずつ内側に片寄っており、−万第3図(B)は
櫛/#ターンが等間隔で配列されている。
In Figure 3 (4), the upper and lower @patterns are 0 around center 3.
.. They are shifted inward by 1 μm, and in Figure 3 (B), combs/# turns are arranged at equal intervals.

ここで第3図(4)の・臂ターンと第3図(B)ツバタ
ーンtMねた場合、第4図のようにレソストの残る部分
が生じ、かかるレソストノ々ターン部1の残9幅からア
ライメント精度(合わぜずれJit)’に測定するよう
にしていた。
If the elbow turn shown in FIG. 3 (4) and the shoulder turn tM shown in FIG. It was made to measure with accuracy (alignment deviation Jit)'.

(発明が解決しようとする問題点) しかしながら、上記構成の(2)型バーニアでは。(Problem to be solved by the invention) However, in the type (2) vernier with the above configuration.

X方向及びY方向のずれ電を個別に測定しなければなら
ず、顕微鏡でX方向からY方向へのパターン移動に時間
がかかり、又ノ9ターンの憤域が大きくなるなどの問題
点がめった。
It was necessary to measure the shear current in the X and Y directions separately, and it took a long time to move the pattern from the X direction to the Y direction using a microscope, and problems such as an increase in the area of 9 turns were common. .

この発明は、前記従来技術がもっている問題点のうち、
X方向及びY方向のずれ量の別個の測定により測定時間
のかかる問題点について解決したアライメント精度用ド
ツトバーニアを提供するものである。
This invention solves the problems of the above-mentioned prior art.
The present invention provides a dot vernier for alignment accuracy that solves the problem of long measurement time by measuring the amount of deviation in the X direction and the Y direction separately.

(問題点t−解決するための手段) この発明は、アライメント精度用ドツトバーニアにおい
て、縦横方向に複数個配列され、そのセンタを中心にま
わりのものが微小寸法ずつ内側に片寄った第1ノソスト
パターン部を含む第1−9ターンと、この第1のパター
ンの各個が夫々状まシ得るサイズのウィンド部を含む第
2・ンターンとを設けたものである。
(Problem t - Means for Solving) This invention provides a dot vernier for alignment precision, in which a plurality of dot verniers are arranged in the vertical and horizontal directions, and the first dot vernier is arranged in a plurality of dot verniers in the vertical and horizontal directions, and the ones around the center are shifted inward by minute dimensions. The first to ninth turns each include a pattern part, and the second turn each includes a window part of a size that can accommodate each individual pattern of the first pattern.

(作用) この発明によれば、以上のようにアライメントTrJ度
用ドツトバーニアを構成したので、第1/#ターンと第
2パターンを■ねた場合、第2/#ターンの各ウィンド
部に第1 パターンの各第ルジスト・母ターン部が位置
され、第1 パターンと第2・セターンの合わせ精度が
高ければウィンド部が等間隔でめることにより中心のウ
ィンド部の1個所に第1レソストパターン部が合い、合
わせ精度が低ければ中心からすれた個所のウィンド部の
1個所に8ルジストノ9タ一ン部が合うことになりしだ
がつて、前記問題点を除去できる。
(Function) According to the present invention, since the dot vernier for alignment TrJ is configured as described above, when the first/# turn and the second pattern are arranged, a If each of the first resist and main turn parts of the first pattern are positioned, and the alignment accuracy of the first pattern and the second set turn is high, the wind parts can be placed at equal intervals, so that the first resist part can be placed in one place on the central wind part. If the pattern parts match and the alignment accuracy is low, the 8/9 button part will fit in one place of the window part which is off the center, and the above-mentioned problem can be eliminated.

(実施例) 以下、この発明のアライメント精度用ドツト/ヤーニア
の実施例について図面に基づき説明する。
(Example) Hereinafter, an example of the alignment accuracy dot/Yarnier of the present invention will be described based on the drawings.

第1図(4)はその−実施例に適用される第1 /′e
ターンの平面図であり、第1図(B)は第2・ぐターン
の平面図である。
FIG. 1(4) is the first /'e applied to the embodiment.
FIG. 1B is a plan view of the second turn.

ill(4)の第1パターン−10,には、多数の第ル
ジストパターン部11(斜線が施されている部分)が縦
横方向に配列形成されており、この第ルジストパターン
部11はそのセンタを中心としてまわりのパターン部1
1が約0.11111ずつ中心方向内側に片寄っている
In the first pattern-10 of ill(4), a large number of first lujist pattern parts 11 (shaded parts) are arranged in the vertical and horizontal directions, and this lujist pattern part 11 is Pattern part 1 around the center
1 is shifted inward in the center direction by about 0.11111.

この0,1龍の寸法は装置の精度から求められた数値で
あり、この数値に特に限定されるものではない。
The dimensions of this 0,1 dragon are numerical values determined from the accuracy of the device, and are not particularly limited to these numerical values.

次に、第1図(B)の第2パターン12は・母ターン部
13に各個が上記第1のパターン11が収まるサイズで
あり等間隔で醸横方向にウィンド部14(レソストのな
い部分)が配列形成されている。
Next, the second pattern 12 in FIG. 1(B) is of a size that each of the first patterns 11 can fit in the main turn part 13, and is arranged at equal intervals in the horizontal direction in the window part 14 (the part without the rest). are formed into an array.

この第2パターン皿のコーナ部には「+」字形のパーニ
アエ5および矩形状のバーニア16が設けられている。
A "+"-shaped pernier 5 and a rectangular vernier 16 are provided at the corner of the second pattern plate.

上記41及び第2のパターン形状は図示の四辺形に限定
されるものではなく、三角形状その他の形状でもよいが
、第1ノ9ターンムと第2パターン12とが相似形が好
ましい。
The shapes of the patterns 41 and the second pattern are not limited to the illustrated quadrilaterals, and may be triangular or other shapes, but it is preferable that the first pattern 41 and the second pattern 12 have similar shapes.

次に第2図に示すように、第2パターン12と第1パタ
ーン10とを亜ねると%第2/′eターン12のウィン
ド部14の中に第1パターン10の第ルジストパターン
部11が一つだけ合うところができる。
Next, as shown in FIG. You can find a place where only one matches.

Tなわち、この例で/ri、;giレソスト・ぜターン
部11はセンタを中心(・こまわりの第1ノソストパタ
ーン11がQ、illずつ内側に入っており、第2パタ
ーンLユのウィンド部14は等間隔に形成されているの
で、たとえば第1図(A)の第1ノ9ターン」を1層目
に形1或しておき、第1図(印の第27ぞターンしヱを
2層目に形成することにより、1層目に対する2N目の
合わせ精度を見ることができる。
In other words, in this example, /ri,;giresost/zeturn part 11 is centered around the center (・), and the first nosost pattern 11 is inside by Q,ill, and the second pattern Since the portions 14 are formed at equal intervals, for example, the 1st turn 9 in FIG. By forming this on the second layer, it is possible to check the alignment accuracy of the 2Nth layer with respect to the first layer.

1層目と2層目の合わせがよいときは、たとえば第2図
のように中心1個所のウィンド部14に第ルジスト・母
ターン部11が合い、まわりの第ルソストノターン部1
1が各ウィンド部14内罠おいて漸次内側に寄っている
ように見える。
When the first and second layers are well aligned, for example, as shown in FIG.
1 appears to be gradually moving inward in each window section 14.

また、逆に1層目と2層目の合わせが悪いときは、中心
よりずれた場所に第2パターン12のウィンド部14内
第1)々ターフ10の第1レジストパターン部11が1
個所だけ合致して見え、残シの第ルノストノ臂ターン部
11は谷つィンド部14内においてそれぞれ内側に片寄
って見える。
On the other hand, if the alignment between the first and second layers is poor, the first resist pattern section 11 of the turf 10 may be placed in the window section 14 of the second pattern 12 at a location shifted from the center.
They appear to match only in places, and the remaining first arm turn portions 11 appear to be biased inward within the valley wind portions 14.

このようにして、第1パターン10の第1レジストパタ
ーン部11が第2ノ臂ターン12のウィンド部14の中
心からはなれたいずれかのI Ir!A所の合致点を見
出し、そのときのX方向、Y方向のずれ量が確認できる
In this way, any I Ir! where the first resist pattern portion 11 of the first pattern 10 is separated from the center of the window portion 14 of the second arm turn 12 . You can find the matching point at location A and check the amount of deviation in the X direction and Y direction at that time.

つまり、第2図の斜線で施すウィンド部14Aと第1/
#ターン10の第ルソストノ9ターン部11のレジスト
/?ターン部11Aとの合致点に対し、中心からX方向
にいくつ& Y 71i +o]にいくつずれているか
で判断され得る。
In other words, the window part 14A and the first/first part are shaded in FIG.
#Resist of turn 10, 9th turn part 11/? The judgment can be made based on how many &Y 71i +o] the point is shifted from the center in the X direction with respect to the matching point with the turn portion 11A.

なお、上記の説明では、第2パターンi 2tt層目、
第1パターンL Oi2層目としたが、その逆でもよい
ことはもちろんである。
In addition, in the above description, the second pattern i 2tt layer,
Although the first pattern L Oi is the second layer, it goes without saying that the reverse may be used.

(発明の効果) 以上詳71和に説明したように、この発明によれば。(Effect of the invention) As described in detail above, according to the present invention.

、41パターンの4 ルソストノZターン部はセンタを
中心にして1わりの第ルソスト/ぞターン部を所定の微
小寸法だけセンタ一方向内側にずれるようにし、第2・
々ターンのウィンド部を等間隔に形成してこのウィンド
部と第1レジストパターン部の位置合わせを行うように
したので、X及びY方向のずれが直ちに判別され測定に
時間がかからないO また、ノ!ターンの鎖環が比較的小さくてすむ利点があ
り、さらに装置梢度が上記ドツト数を合わせることによ
って直ちに判断し得る等の効果がある。
, 4 of 41 patterns The Lusosto Z-turn part is made so that the 1st Lusosto Z-turn part is shifted inward in one direction from the center by a predetermined minute dimension with the center as the center, and the second
Since the window portions of each turn are formed at equal intervals and the positioning of the window portions and the first resist pattern portion is performed, deviations in the X and Y directions can be immediately determined and measurement does not take much time. ! This has the advantage that the chain of turns can be relatively small, and furthermore, the degree of device aperture can be immediately determined by adding up the number of dots.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(4)はこの発明のアライメント精度用ドツトバ
ーニアの一実施例に適用される第1パターンの平面図、
第1図(B)は同第2・9ターンの平面図、第2図は同
上第1 zRターンと第2パターンをlねた状態を示す
図、第3図(4)、@3図(B)は従来の櫛型バーニア
の構成例を示す平面図、第4図は第3図(A)、第3図
(B)の櫛型バーニア全型ねた状態を示す図である。 lO・・・第1/臂ターン、11.IIA・・・第ルジ
ストハターン部、t 2・・・第2パターン、13・・
・第2レジストノIターン部、14.14A・・・ウィ
ンド部O
FIG. 1 (4) is a plan view of the first pattern applied to an embodiment of the dot vernier for alignment accuracy of the present invention;
Figure 1 (B) is a plan view of the 2nd and 9th turns, Figure 2 is a diagram showing the 1st zR turn and the 2nd pattern laid down, Figure 3 (4), Figure 3 ( B) is a plan view showing an example of the configuration of a conventional comb-shaped vernier, and FIG. 4 is a diagram showing the entire comb-shaped vernier shown in FIGS. 3(A) and 3(B) in a resting state. lO...1st/arm turn, 11. IIA... 1st pattern, t 2... 2nd pattern, 13...
・Second resist I turn part, 14.14A...window part O

Claims (1)

【特許請求の範囲】 (a)同一形状及び同一サイズで縦横方向に配列され、
センタを中心にして周辺部分が所定の微小寸法ずつ内側
に片寄つた複数の第1レジストパターン部を含む第1パ
ターンと、(b)この第1パターンの複数パターンの各
個が夫々収まり得るサイズで等間隔に配列されたウイン
ド部を含む第2パターンと、 よりなるアライメント精度用ドツトパーニア。
[Scope of Claims] (a) Arranged in the vertical and horizontal directions with the same shape and the same size,
(b) a first pattern including a plurality of first resist pattern portions whose peripheral portions are shifted inward by a predetermined minute dimension with the center as the center; A dot pernier for alignment accuracy comprising: a second pattern including window portions arranged at intervals; and a dot pernier for alignment accuracy.
JP62146983A 1987-06-15 1987-06-15 Dot vernier for accurate alignment Pending JPS63311735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62146983A JPS63311735A (en) 1987-06-15 1987-06-15 Dot vernier for accurate alignment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62146983A JPS63311735A (en) 1987-06-15 1987-06-15 Dot vernier for accurate alignment

Publications (1)

Publication Number Publication Date
JPS63311735A true JPS63311735A (en) 1988-12-20

Family

ID=15419970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62146983A Pending JPS63311735A (en) 1987-06-15 1987-06-15 Dot vernier for accurate alignment

Country Status (1)

Country Link
JP (1) JPS63311735A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5388517A (en) * 1991-09-24 1995-02-14 Levien; Raphael L. Method and apparatus for automatic alignment of objects and register mark for use therewith
JPH0917715A (en) * 1995-06-29 1997-01-17 Nec Corp Pattern matching calipers for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5388517A (en) * 1991-09-24 1995-02-14 Levien; Raphael L. Method and apparatus for automatic alignment of objects and register mark for use therewith
US5402726A (en) * 1991-09-24 1995-04-04 Levien; Raphael L. Register mark
JPH0917715A (en) * 1995-06-29 1997-01-17 Nec Corp Pattern matching calipers for semiconductor device

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