JP2000182919A - Array precision measuring pattern and measuring method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an array precision measuring pattern wherein no dispersion caused by artificial factor exists, high-precision measurement is allowed, no measurement stuff required, and measurement time is shortened, related to an array precision measuring pattern which indicates the position precision of a plurality of patterns in a substrate surface. SOLUTION: The array precision measuring has a first layer reference pattern group comprising a plurality of first array precision measuring patterns 1 provided with a center line parallel to X-axis and Y-axis perpendicular to each other, and a second layer thereon and after comprising a plurality of second array precision measuring patterns 2 provided with a center line parallel to x-axis and Y-axis perpendicular to each other. The center lines corresponding to array precision measuring patterns are provided parallel in vertical direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a pattern for measuring alignment accuracy indicating a plurality of positional accuracy in a substrate surface in a photolithography method in a semiconductor integrated circuit and a liquid crystal device manufacturing process, and a measuring method thereof.

[0002]

2. Description of the Related Art Conventionally, in a photolithography method of a semiconductor integrated circuit and liquid crystal device manufacturing process, a vernier is used as a pattern for measuring alignment accuracy indicating a plurality of positional accuracy in a substrate surface, and a person performs visual measurement with a microscope. Methods for measuring alignment accuracy have been used. Hereinafter, an arrangement accuracy measuring method using a conventional vernier as an arrangement accuracy measurement pattern will be described with reference to the drawings.

FIG. 2 is an example showing a vernier which is a conventional pattern for measuring alignment accuracy. In FIG. 2, reference numeral 11 denotes a first array accuracy measurement vernier which is a first reference, and reference numeral 12 denotes an array accuracy measurement vernier of a second pattern formed after the second. L is the pitch of the first alignment accuracy measurement vernier 1 which is the first reference, and M is the pitch of the alignment accuracy measurement vernier 2 of the second and subsequent second patterns. O is the origin of the first alignment accuracy measurement vernier which is a reference formed on the first layer. Further, the pitch L of the first alignment accuracy measurement vernier 1 serving as a reference and the second alignment accuracy measurement vernier 2
Have different pitches, and the absolute value of the difference is P.

As shown in FIG. 2, a first reference which is a first reference
Is formed, and a second array accuracy vernier 12 is formed on the second and subsequent layers. First
Since the pitches of the vernier 11 for measuring alignment accuracy and the vernier 12 for measuring second alignment accuracy are different, the center of the valley of the vernier 11 for measuring first alignment accuracy and the peak of the vernier 12 for measuring second alignment accuracy are different. Of the part that coincides with the center of
The product of the number of valleys from the origin O of the first arrangement accuracy measurement vernier 11 and the absolute value P of the pitch difference is a first arrangement which is the first reference to be formed. The second and subsequent array verniers 2 for the accuracy measurement vernier 1 have the array accuracy. In practice, a person visually measures the coincident portion and measures the alignment accuracy.

Further, by providing the vernier in FIG. 2 in the X direction and the Y direction, the arrangement accuracy in the X direction and the Y direction can be measured.

[0006]

However, in the configuration of the above-mentioned conventional example, when a vernier is used as a pattern for measuring the alignment accuracy indicating a plurality of positional accuracy within the substrate surface, the vernier is visually measured by a microscope using a microscope. Therefore, the measurement of the alignment accuracy varies due to an artificial factor. Further, due to the complexity of the pattern, it is difficult to automate the measurement by image recognition, and there is a problem that the measurement requires human resources and time.

SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and enables high-accuracy array precision measurement without variation due to human factors, automatic measurement, shortens measurement time, and reduces the number of measurement personnel. It is an object of the present invention to provide a measurement pattern that does not require the measurement.

[0008]

In order to solve this problem, an arrangement accuracy measurement pattern of the present invention is designed so that X-rays which are orthogonal to each other are measured.
A first-layer reference pattern group having a plurality of first alignment accuracy measurement patterns having a center line parallel to the axis and the Y axis;
A second having a center line parallel to the X axis and the Y axis in an orthogonal relationship
And a pattern group of the second layer and subsequent layers having a plurality of the alignment accuracy measurement patterns, and the center lines corresponding to the respective alignment accuracy measurement patterns are provided so as to be arranged in parallel in the vertical direction. This is a pattern for measuring the array accuracy.

With this configuration, the line width between the center lines parallel to each other is measured for each of two center lines composed of two sets of parallel lines which are orthogonal to each other in the first and second alignment accuracy measurement patterns. It is possible to measure the alignment accuracy by doing so, which enables mechanization of measurement by image recognition,
It is possible to provide a pattern for measuring alignment accuracy that can perform high-accuracy alignment accuracy without variation in measurement accuracy due to human factors, shorten measurement time, and improve productivity.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The first aspect of the present invention is a first layer having a plurality of first alignment accuracy measurement patterns having center lines parallel to the X-axis and the Y-axis which are orthogonal to each other. An eye reference pattern group and a second and subsequent pattern groups having a plurality of second alignment accuracy measurement patterns having center lines parallel to the X-axis and the Y-axis which are orthogonal to each other. This is an arrangement accuracy measurement pattern provided so that the corresponding center lines of the measurement pattern are arranged in parallel in the vertical direction. With this configuration, the first and second arrangement accuracy measurement patterns are provided. The alignment accuracy can be measured by measuring the line width between the center lines parallel to each other in each of two center lines composed of two sets of parallel lines having an orthogonal relationship. Therefore, mechanization of measurement by image recognition can be performed. Enabled, by artificial factors No variation in measurement accuracy, highly accurate sequence accuracy can be measured, it has an action that can provide a sequence accuracy measurement pattern to improve productivity by shortening the measurement time.

According to a second aspect of the present invention, the first arrangement accuracy measurement pattern is a cross shape, and the second arrangement accuracy measurement pattern is rectangular. In addition to the function of the first aspect of the present invention, the first alignment accuracy measurement pattern and the second alignment accuracy measurement pattern are formed such that the resist is formed in the reverse relationship of the remaining and the remaining. Has the ability to.

According to a third aspect of the present invention, there is provided a first-layer reference pattern group having a plurality of first alignment accuracy measurement patterns having center lines parallel to the X-axis and the Y-axis in an orthogonal relationship; It has a pattern group of a second layer or later having a plurality of second arrangement accuracy measurement patterns having a center line parallel to the X-axis and the Y-axis in an orthogonal relationship, and a corresponding center of each arrangement accuracy measurement pattern 2. An arrangement accuracy measurement method according to claim 1, wherein in the arrangement accuracy measurement pattern provided so that the lines are arranged in parallel in the vertical direction, the width of the corresponding center line in the horizontal direction is measured. It has the same function as the described invention.

[0013]

Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of a pattern for measuring alignment accuracy showing an example of an embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a first alignment accuracy measurement pattern which is a first reference and is formed in a cross shape. Reference numeral 2 denotes a pattern for measuring the arrangement accuracy of the second pattern formed second, which is formed in a rectangular shape. The first arrangement accuracy measurement pattern 1 and the second arrangement accuracy measurement pattern 2 are provided such that the corresponding center lines of the respective patterns are arranged in parallel in the vertical direction. K is the distance between the center lines formed by parallel lines parallel to the X axis of the first alignment accuracy measurement pattern 1 serving as the first reference and the second alignment accuracy measurement pattern 2 of the second pattern. Is the line width. In addition, the first alignment accuracy measurement pattern 1 serving as the first reference
And the pattern 2 for measuring the alignment accuracy of the second pattern formed as long as the resist has a relationship opposite to that of the removal and removal of the resist, and the hatched portion in FIG. And a pattern is formed.

A center line composed of parallel lines parallel to the X axis of the first alignment accuracy measurement pattern 1 serving as the first reference and the alignment accuracy measurement pattern 2 of the second pattern formed as the second pattern. When the line width K between them is measured by a line width measuring device, the difference between the measured value and the photomask design value becomes the alignment accuracy in the X direction. Similarly, with respect to the Y axis, the first alignment accuracy measurement pattern 1 serving as the first reference and the second alignment accuracy measurement pattern 2 of the second pattern are parallel to the Y axis. Measure the line width between the center lines consisting of lines,
By measuring the difference between the measured value and the photomask design value, the alignment accuracy in the Y direction can be measured. A line between the center lines of parallel lines parallel to the X-axis of the first alignment accuracy measurement pattern 1 serving as the first reference and the second alignment accuracy measurement pattern 2 of the second pattern. When the design value of the photomask having the width K is set to 0, the measurement of the line width K directly becomes the alignment accuracy in the X direction. Similarly, for the Y axis,
The arrangement accuracy in the Y direction can be measured.

As described above, according to the present invention, a first-layer reference pattern group having a plurality of first alignment accuracy measurement patterns having center lines parallel to the X-axis and the Y-axis in an orthogonal relationship. , A pattern group of a second layer or later having a plurality of second arrangement accuracy measurement patterns each having a center line parallel to the X-axis and the Y-axis in an orthogonal relationship, and corresponding to each arrangement accuracy measurement pattern. By providing the center lines so as to be arranged in parallel in the vertical direction, two center lines each consisting of two sets of parallel lines which are orthogonal to each other in the first and second alignment accuracy measurement patterns are mutually separated. By measuring the line width between the parallel center lines, it is possible to measure the alignment accuracy, which enables mechanization of the measurement by image recognition, and high-accuracy alignment accuracy without variation in the measurement accuracy due to human factors Can be measured at the time of measurement It can be a shortened, providing a sequence accuracy measurement pattern to improve productivity.

[0016]

As described above, according to the pattern for measuring the alignment accuracy of the present invention, it is possible to mechanize the measurement by screen recognition, and to measure the alignment accuracy with high accuracy without variation in the measurement accuracy due to human factors. Since it is possible to perform automatic measurement, it is possible to provide a pattern for measuring alignment accuracy that shortens the measurement time and improves productivity.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a pattern for measuring alignment accuracy according to the present invention.

FIG. 2 is a schematic diagram of a conventional pattern for measuring alignment accuracy.

[Explanation of symbols]

1 First arrangement accuracy measurement pattern to be first formed reference 2 Arrangement accuracy measurement pattern of second formed second pattern K First arrangement accuracy measurement to be first formed reference Width between the center lines of parallel lines parallel to the X-axis of the pattern 2 for measuring the alignment accuracy of the pattern 1 for use and the second pattern formed for the second pattern 11 The first array which is the first reference to be formed Accuracy measurement vernier 12 Secondly formed second pattern arrangement accuracy measurement vernier L Pitch of first arrangement accuracy measurement vernier 1 serving as reference formed first M Second formed second The pitch O of the pattern arrangement accuracy measurement vernier 2 O The absolute value of the difference between the origin P L and M of the first arrangement accuracy measurement vernier 1 serving as the first reference.

Claims (3)

[Claims] 1. A first-layer reference pattern group having a plurality of first alignment accuracy measurement patterns having a center line parallel to an X-axis and a Y-axis in an orthogonal relationship, and an X-axis in an orthogonal relationship.
It has a pattern group of the second layer and subsequent layers having a plurality of second arrangement accuracy measurement patterns having a center line parallel to the Y axis, and the corresponding center lines of each arrangement accuracy measurement pattern are set in parallel in the vertical direction. An arrangement accuracy measurement pattern, which is provided so as to be arranged. 2. The arrangement accuracy measurement pattern according to claim 1, wherein the first arrangement accuracy measurement pattern has a cross shape, and the second arrangement accuracy measurement pattern has a rectangular shape. 3. A first-layer reference pattern group having a plurality of first alignment accuracy measurement patterns having center lines parallel to the X-axis and the Y-axis in an orthogonal relationship, and an X-axis in an orthogonal relationship.
A second and subsequent pattern groups having a plurality of second alignment accuracy measurement patterns having a center line parallel to the Y axis are provided, and the corresponding center lines of the respective alignment accuracy measurement patterns are arranged in parallel in the vertical direction. An arrangement accuracy measurement method, comprising: measuring a horizontal line width of a corresponding center line in an arrangement accuracy measurement pattern provided to be provided.