KR960004644B1 - Method of producing two opposite objects measuring mark - Google Patents
Method of producing two opposite objects measuring mark Download PDFInfo
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- KR960004644B1 KR960004644B1 KR1019920026713A KR920026713A KR960004644B1 KR 960004644 B1 KR960004644 B1 KR 960004644B1 KR 1019920026713 A KR1019920026713 A KR 1019920026713A KR 920026713 A KR920026713 A KR 920026713A KR 960004644 B1 KR960004644 B1 KR 960004644B1
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- pattern
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- overlapping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
제1도는 종래의 중첩오차 측정마크를 도시한 평면도.1 is a plan view showing a conventional overlapping error measurement mark.
제2도는 종래의 또다른 중첩오차 측정마크를 도시한 평면도.2 is a plan view showing another conventional overlapping error measurement mark.
제3도는 본 발명에 의해 중첩오차 측정마크를 도시한 평면도.3 is a plan view showing overlapping error measurement mark by the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 외곽패턴 2 : 내곽패턴1: outer pattern 2: inner pattern
3 : 사변형 패턴3: quadrilateral pattern
본 발명은 고집적 반도체 소자의 제조공정중 중첩오차 측정마크 제조방법에 관한 것으로, 종래의 중첩오차 마크에 45도 내지 135도로 경사진 마크를 추가하므로써 종래의 90도와 180도에 측정하여 서로 보정하던 값에 추가된 마크의 보정값을 더하여 더욱 정밀한 중첩오차를 측정할 수 있도록한 중첩오차 측정마크 제조 방법에 관한 것이다.The present invention relates to a method for manufacturing a superimposed error measurement mark during a manufacturing process of a highly integrated semiconductor device, and is a value measured at 90 degrees and 180 degrees in the related art by adding a mark inclined at 45 to 135 degrees to a conventional superimposed error mark. The method relates to a method for manufacturing a superimposed error measurement mark by adding a correction value of a mark added to the superimposed error so that a more accurate superimposition error can be measured.
반도체 소자의 고집적화 될수록 각층각의 중첩정밀도 역시 품질 및 수율에 중요성이 더해가고 있다.As semiconductor devices become more integrated, the overlapping accuracy of each layer is also becoming more important to quality and yield.
현재 반도체 소자 공정시 적층구조를 이용한 제작방법이 널리 사용되고 있는데, 이 적층구조 방식은 각층간의 중첩정밀도가 매우 중요한 변수로 작용한다.Currently, a manufacturing method using a laminated structure is widely used in semiconductor device processing. In this stacked structure method, the overlapping accuracy between layers is a very important variable.
그래서, 각층간의 중첩오차를 줄이기 위하여 각층별로 오차측정 버니어를 만들어 층간에 발생한 오차를 측정하여 노광작업시 이 값을 보정하여 줌으로써 층간의 중첩오차를 줄이고 있다.Therefore, in order to reduce the overlapping error between layers, an error measuring vernier is made for each layer to measure the error occurring between the layers, thereby correcting this value during exposure, thereby reducing the overlapping error between layers.
종래의 중첩오차 측정패턴은 육안으로 관찰하여 읽는 패턴과 측정장비를 이용할 수 있는 패턴이 있다. 현재는 육안보다 측정장비를 이용한 오차측정이 더 정밀하여 널리 적용되고 있으나 한정적 패턴인 수직형 패턴과 수평형 패턴에 한하여 적용되고 있다.Conventional overlap error measurement pattern has a pattern that can be used to observe the reading with the naked eye and measuring equipment. Currently, error measurement using measuring equipment is more precisely applied than the naked eye, but it is widely applied to the vertical pattern and the horizontal pattern, which are limited patterns.
도시된 제1도와 제2도는 종래에 널리 쓰이고 있는 측정패턴이다. 제1도와 제2도의 외곽패턴(1)이나 내곽패턴(2)중 하나를 먼저 형성시킨 후 그 위에 중첩시킬 층에 먼저 형성된 패턴과 다른 패턴(즉, 외곽이 먼저형성되면 내곽패턴 형성)을 형성시킨 후 각 패턴의 수직과 수평패턴을 측정하여 외곽패턴의 중심과 내과패턴의 중심을 찾아내어 측정하고, 다시 90도 회전시켜 똑같은 방법으로 측정하여 각 중심간의 오차를 보정한후 얻어지는 내곽패턴의 중심과 외곽패턴의 중심 사이의 오차를 측정하여 양 층간의 중첩오차를 측정하였다.1 and 2 are measurement patterns widely used in the related art. Form one of the outer pattern 1 or the inner pattern 2 of FIGS. 1 and 2 first, and then form a pattern different from the first pattern formed on the layer to be superimposed thereon (that is, the inner pattern is formed when the outer is first formed) After measuring the vertical and horizontal pattern of each pattern, find the center of the outer pattern and the center of the medical pattern, measure it, and then rotate it by 90 degrees to measure the same method and correct the error between the centers. The overlapping error between the two layers was measured by measuring the error between the center and the center of the outer pattern.
이러한 측정방식은 수직수평 패턴만의 중첩오차 측정이므로 각층마다의 다양한 패턴에 대하여 만족시킬 수 없다.Since this measurement method is a measurement of overlapping errors of only vertical horizontal patterns, it cannot satisfy various patterns for each layer.
또한, 외곽 또는 내곽패턴중 일부분만이라도 패턴이 훼손된 경우는 측정이 불가능하거나 가능해도 신뢰성이 떨어진다.In addition, even if only a part of the outer or inner pattern is damaged, the reliability is low even if the measurement is impossible or possible.
따라서, 본 발명은 종래의 중첩오차 측정마크에 (45도 내지 135도)사변형 패턴을 추가하여 종래의 수직수평 패턴만 적용하던 방식에서 더 다양한 범위의 패턴까지 추가하므로 한층 정밀한 중첩오차를 측정할 수 있고 발생할 수 있는 패턴의 훼손까지 측정할 수 있는 중첩오차 측정마크를 제공하는데 그 목적이 있다.Therefore, the present invention adds a quadrangular pattern (45 degrees to 135 degrees) to a conventional overlapping error measurement mark, and thus adds a wider range of patterns in a manner in which only a conventional vertical horizontal pattern is applied, so that more accurate overlapping error can be measured. Its purpose is to provide an overlap error measurement mark that can measure damage to a pattern that may occur.
이하, 첨부된 제3도를 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying Figure 3 will be described in detail the present invention.
종래의 중첩오차 측정마크(제2도)의 외곽패턴(1)과 내곽패턴(2)의 모서리부에 45도 내지 135도 각도의 사변형 패턴(3)을 추가한 상태의 도면으로서, 수직과 수평형 패턴만 측정이 가능한 종래의 중첩오차 측정마크와는 달리 사변형 패턴(3)도 포함되므로 한층 정밀한 오차보정이 가능하다.A diagram showing a state in which a quadrilateral pattern 3 at an angle of 45 degrees to 135 degrees is added to a corner portion of an outer pattern 1 and an inner pattern 2 of a conventional overlapping error measurement mark (FIG. 2). Unlike the conventional overlapping error measurement mark that can measure only the equilibrium pattern, the quadrilateral pattern 3 is also included, so that more accurate error correction is possible.
또한, 마크에서 패턴수가 많으므로 훼손된 패턴이 있어도 오차측정이 가능하고 신뢰성을 높일 수 있다.In addition, since the number of patterns in the mark is large, even if there is a damaged pattern, error measurement is possible and reliability can be improved.
본 발명은 적층구조를 채택하는 모든 제품개발 공정에서 필요로 하는 중첩오차 측정마크에 적용될 수 있다.The present invention can be applied to the overlapping error measurement mark required in all product development processes employing the laminated structure.
본 발명에 의한 사변형 패턴이 형성된 중첩오차 측정마크를 이용하면 기존의 마크에 비해 정밀한 오차보정이 가능하므로 각 층간의 중첩정밀도가 향상되고 층간 공정신뢰성 및 공정여유도가 높아진다.When the overlap error measurement mark formed with the quadrangle pattern according to the present invention is used, it is possible to precisely correct the error compared to the existing mark, so that the overlapping accuracy between the layers is improved, and the process reliability and the process margin are increased.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920026713A KR960004644B1 (en) | 1992-12-30 | 1992-12-30 | Method of producing two opposite objects measuring mark |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920026713A KR960004644B1 (en) | 1992-12-30 | 1992-12-30 | Method of producing two opposite objects measuring mark |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940016651A KR940016651A (en) | 1994-07-23 |
| KR960004644B1 true KR960004644B1 (en) | 1996-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920026713A KR960004644B1 (en) | 1992-12-30 | 1992-12-30 | Method of producing two opposite objects measuring mark |
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| KR (1) | KR960004644B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100358565B1 (en) * | 1995-03-15 | 2003-01-24 | 주식회사 하이닉스반도체 | Semiconductor device having overlay mark |
| KR100353818B1 (en) * | 1995-11-24 | 2002-12-16 | 주식회사 하이닉스반도체 | Halftone phase shift mask for fabricating contact hole |
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1992
- 1992-12-30 KR KR1019920026713A patent/KR960004644B1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR940016651A (en) | 1994-07-23 |
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