JPS5989759A - 気体電気化学反応装置 - Google Patents

気体電気化学反応装置

Info

Publication number
JPS5989759A
JPS5989759A JP19760382A JP19760382A JPS5989759A JP S5989759 A JPS5989759 A JP S5989759A JP 19760382 A JP19760382 A JP 19760382A JP 19760382 A JP19760382 A JP 19760382A JP S5989759 A JPS5989759 A JP S5989759A
Authority
JP
Japan
Prior art keywords
electrode
gas
gaseous
reaction chamber
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19760382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0379437B2 (enExample
Inventor
Kazuhiko Yonemitsu
米光　一彦
Masakuni Akiba
秋葉　政邦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP19760382A priority Critical patent/JPS5989759A/ja
Publication of JPS5989759A publication Critical patent/JPS5989759A/ja
Publication of JPH0379437B2 publication Critical patent/JPH0379437B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP19760382A 1982-11-12 1982-11-12 気体電気化学反応装置 Granted JPS5989759A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19760382A JPS5989759A (ja) 1982-11-12 1982-11-12 気体電気化学反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19760382A JPS5989759A (ja) 1982-11-12 1982-11-12 気体電気化学反応装置

Publications (2)

Publication Number Publication Date
JPS5989759A true JPS5989759A (ja) 1984-05-24
JPH0379437B2 JPH0379437B2 (enExample) 1991-12-18

Family

ID=16377214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19760382A Granted JPS5989759A (ja) 1982-11-12 1982-11-12 気体電気化学反応装置

Country Status (1)

Country Link
JP (1) JPS5989759A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177374A (ja) * 1985-01-30 1986-08-09 Shimadzu Corp プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
WO2001089024A1 (en) * 2000-05-16 2001-11-22 University College London Electrochemical methods and cells
US20120111501A1 (en) * 2010-11-04 2012-05-10 Tokyo Electron Limited Plasma processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177374A (ja) * 1985-01-30 1986-08-09 Shimadzu Corp プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
WO2001089024A1 (en) * 2000-05-16 2001-11-22 University College London Electrochemical methods and cells
US20120111501A1 (en) * 2010-11-04 2012-05-10 Tokyo Electron Limited Plasma processing apparatus
US9196461B2 (en) * 2010-11-04 2015-11-24 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
JPH0379437B2 (enExample) 1991-12-18

Similar Documents

Publication Publication Date Title
US4640845A (en) Method and apparatus for forming non-single-crystal layer
US9441791B2 (en) Gas supply unit, substrate processing apparatus and supply gas setting method
US6779483B2 (en) Plasma CVD apparatus for large area CVD film
JP3114739U (ja) プラズマ反応器のガス分配板電極
JP2007191792A (ja) ガス分離型シャワーヘッド
CN113170567B (zh) 活性气体生成装置
JPS60167330A (ja) リアクテイブイオンエツチ装置のガス供給装置
EP3641506B1 (en) Active gas generating device
EP0116612A1 (en) Apparatus for processing of substrates
JP4579522B2 (ja) プラズマ表面処理装置
JPS5989759A (ja) 気体電気化学反応装置
KR100645556B1 (ko) 배기가스 처리용 플라즈마 반응기 및 이를 이용한 배기가스 처리장치
TW464969B (en) Simultaneous discharge device
JP2005260186A (ja) プラズマプロセス装置
JPS6187872A (ja) 平行平板型プラズマｃｖｄ装置のアノ−ド電極
JPS60202937A (ja) ドライエツチング装置
JP2848755B2 (ja) プラズマｃｖｄ装置
KR20020066206A (ko) 플라즈마 처리장치
JPH062952B2 (ja) プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
JP2912059B2 (ja) 常圧ｃｖｄ装置
JP2003197396A (ja) プラズマ放電装置
TW201331980A (zh) 電漿處理室中之氣體供給插件及其方法
JPH0595037U (ja) プラズマｃｖｄ装置
JP4494942B2 (ja) プラズマ処理装置
JPH06291067A (ja) タングステン膜の成膜方法及びタングステンｃｖｄ装置