JPH0379437B2 - - Google Patents

Info

Publication number
JPH0379437B2
JPH0379437B2 JP57197603A JP19760382A JPH0379437B2 JP H0379437 B2 JPH0379437 B2 JP H0379437B2 JP 57197603 A JP57197603 A JP 57197603A JP 19760382 A JP19760382 A JP 19760382A JP H0379437 B2 JPH0379437 B2 JP H0379437B2
Authority
JP
Japan
Prior art keywords
gas
electrode
reaction chamber
space
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57197603A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5989759A (ja
Inventor
Kazuhiko Yonemitsu
Masakuni Akiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP19760382A priority Critical patent/JPS5989759A/ja
Publication of JPS5989759A publication Critical patent/JPS5989759A/ja
Publication of JPH0379437B2 publication Critical patent/JPH0379437B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP19760382A 1982-11-12 1982-11-12 気体電気化学反応装置 Granted JPS5989759A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19760382A JPS5989759A (ja) 1982-11-12 1982-11-12 気体電気化学反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19760382A JPS5989759A (ja) 1982-11-12 1982-11-12 気体電気化学反応装置

Publications (2)

Publication Number Publication Date
JPS5989759A JPS5989759A (ja) 1984-05-24
JPH0379437B2 true JPH0379437B2 (enExample) 1991-12-18

Family

ID=16377214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19760382A Granted JPS5989759A (ja) 1982-11-12 1982-11-12 気体電気化学反応装置

Country Status (1)

Country Link
JP (1) JPS5989759A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH062952B2 (ja) * 1985-01-30 1994-01-12 株式会社島津製作所 プラズマcvd装置及びプラズマcvdによる成膜方法
AU2001254976A1 (en) * 2000-05-16 2001-11-26 University College London Electrochemical methods and cells
JP5700632B2 (ja) * 2010-11-04 2015-04-15 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device

Also Published As

Publication number Publication date
JPS5989759A (ja) 1984-05-24

Similar Documents

Publication Publication Date Title
US4590042A (en) Plasma reactor having slotted manifold
KR960005831A (ko) 가스첨가, 감소된 챔버 직경 및 감소된 rf 웨이퍼 페데스탈 직경에 의해 개선된 플라즈마 균일성을 가진 플라즈마 반응기
US5556474A (en) Plasma processing apparatus
US4496423A (en) Gas feed for reactive ion etch system
EP0116612A1 (en) Apparatus for processing of substrates
JPS627268B2 (enExample)
JPS62103372A (ja) プラズマを使用した化学蒸気堆積による薄膜形成方法および装置
JPH0379437B2 (enExample)
JPH0831421B2 (ja) プラズマ電極装置
JP3002496B2 (ja) 半導体ウェハのドライエッチング方法
JPS60202937A (ja) ドライエツチング装置
JPH11289004A (ja) 被処理体の離脱方法および静電チャック装置
JPS57202733A (en) Dry etching device
JPH062952B2 (ja) プラズマcvd装置及びプラズマcvdによる成膜方法
JP2912059B2 (ja) 常圧cvd装置
JPS58176923A (ja) プラズマcvd装置
JP4680619B2 (ja) プラズマ成膜装置
JPH034025Y2 (enExample)
KR940004101B1 (ko) 평행평판형 플라즈마 에칭장치
JPS61133630A (ja) 半導体基板上のSiO↓2膜のドライエツチング方法
JP2993813B2 (ja) プラズマcvd装置
JP2624966B2 (ja) プラズマエッチング装置
KR0120392Y1 (ko) 산화막 건식각 장비의 불순물 발생 저감장치
JPH06101458B2 (ja) プラズマ気相成長装置
JP2001335941A (ja) ガス噴出装置及び真空処理装置