JPS5986282A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS5986282A JPS5986282A JP19525482A JP19525482A JPS5986282A JP S5986282 A JPS5986282 A JP S5986282A JP 19525482 A JP19525482 A JP 19525482A JP 19525482 A JP19525482 A JP 19525482A JP S5986282 A JPS5986282 A JP S5986282A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- semiconductor laser
- group
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19525482A JPS5986282A (ja) | 1982-11-09 | 1982-11-09 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19525482A JPS5986282A (ja) | 1982-11-09 | 1982-11-09 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5986282A true JPS5986282A (ja) | 1984-05-18 |
| JPS6350874B2 JPS6350874B2 (enExample) | 1988-10-12 |
Family
ID=16338069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19525482A Granted JPS5986282A (ja) | 1982-11-09 | 1982-11-09 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986282A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01175789A (ja) * | 1987-12-29 | 1989-07-12 | Inkiyuubeetaa Japan:Kk | 可視発光半導体レーザ装置 |
| JPH06291421A (ja) * | 1993-04-06 | 1994-10-18 | Nec Corp | 半導体発光素子 |
-
1982
- 1982-11-09 JP JP19525482A patent/JPS5986282A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| TECHNICAL DISRLOSURE BULLETIN * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01175789A (ja) * | 1987-12-29 | 1989-07-12 | Inkiyuubeetaa Japan:Kk | 可視発光半導体レーザ装置 |
| JPH06291421A (ja) * | 1993-04-06 | 1994-10-18 | Nec Corp | 半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6350874B2 (enExample) | 1988-10-12 |
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