EP0000638B1 - Devices including epitaxial layers of dissimilar crystalline materials - Google Patents

Devices including epitaxial layers of dissimilar crystalline materials Download PDF

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Publication number
EP0000638B1
EP0000638B1 EP78300157A EP78300157A EP0000638B1 EP 0000638 B1 EP0000638 B1 EP 0000638B1 EP 78300157 A EP78300157 A EP 78300157A EP 78300157 A EP78300157 A EP 78300157A EP 0000638 B1 EP0000638 B1 EP 0000638B1
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Prior art keywords
garnet
layer
lattice constant
lattice
devices
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EP78300157A
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German (de)
French (fr)
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EP0000638A1 (en
Inventor
Ping King Tien
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AT&T Corp
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Western Electric Co Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Definitions

  • This invention relates to devices including a first crystalline layer and a second crystalline layer epitaxially formed on at least a portion of the first layer.
  • the lattice constants of the materials differ by a factor which is substantially equal to an integer other than unity.
  • the advantages known to arise from lattice matching can be obtained with combinations of materials which were previously considered to be incompatible from the point of view of lattice-matched epitaxy.
  • an electro-optic device such as a semiconductor injection laser with a magneto-optic device such as an optical switch
  • an epitaxial system comprising a semiconductor layer and a garnet layer.
  • a device constructed according to the invention consider the double heterostructure injection diode laser shown in FIG. 1, in which a first crystalline layer, garnet substrate 1, which is suitable for magneto-optic devices, has an epitaxially grown second crystalline layer of an n-type III-V semiconductor 2 that is conductive and serves both as the n-buffer layer and as one contact.
  • the double heterostructure of the diode laser includes an active region 3, p-cladding layer 4, p + layer 5 and contact 6 in conventional fashion.
  • substrate I is Yttrium Aluminum Garnet (YAG) having a lattice constant of 1.2 nm and the III-V compound of layer 2 is AllnAs, compounded to have a lattice constant of 0.6 nm and an energy gap of .68 eV, capable of emitting radiation at 1.82 ⁇ m.
  • YAG Yttrium Aluminum Garnet
  • AllnAs compounded to have a lattice constant of 0.6 nm and an energy gap of .68 eV, capable of emitting radiation at 1.82 ⁇ m.
  • an integrated-optics device for generating an optical carrier, modulating the carrier and ' transmitting the modulated carrier into a fiber-optic waveguide is shown in which substrate 11 and thin.
  • film waveguide 12 are formed of a garnet and a III-V compound respectively, with lattice constants adjusted for an integral ratio.
  • Laser 13 is another version of the semiconductor injection laser known as the twin-guide laser, in which laser light generated in active layer 14 is coupled to waveguide 12 below, through a tapered transition. Waveguide 12 also serves as one of the electric contacts of the laser. Layers 4', 5', and 6' are equivalent to layers 4, 5, and 6 in FIG. 1. The radiation from laser 13 then travels through waveguide 12 into and out of a magneto-optic switch 15 which is formed from a garnet-based material directly on garnet substrate 11.
  • the method of the coupling using tapered edges of the films and the magneto-optic switch described here are earlier inventions of the present inventor (U.S. Patent 3,764,195 and 4,806,226).
  • the laser, switch and waveguides of various shapes can be grown on the garnet substrate by the method of "selective growth" which is well known in epitaxial technology.
  • Switch 15, controlled by electronics logic circuit 16 illustratively a time-division multiplexer that combines input bit streams (arriving on contacts not shown), forms a modulated radiation beam that continues through waveguide 12 to optical fiber 17 for transmission.
  • FIG. 2A shows a section along waveguide 12 through the centerline of devices 13 and 15 and of waveguide 12, indicating by cross-hatching the garnet and semiconductor components of the device.
  • active region 14 of laser 1 and waveguide 12 are both formed from lll-V semiconductors (differently doped), and magneto-optic switch 15 and substrate 11 are formed from garnet-based compounds.
  • FIG. 3 shows a graph plotting the lattice constants of all the iron, gallium and aluminum garnets against ionic radius of the added rare-earth element. Individual elements are indicated at the appropriate ionic radius, and the positions of three well-known garnets are indicated by circles - GGG (Gd-Ga-Gamet); YAG (Y-AI-Garnet) and LuAG (Lu-Al-Garnet).
  • the graph provides the numerical value of the lattice constant of a particular garnet compound, so that an appropriate III-V semiconductor may be formed to provide an integral ratio of lattice, constants.
  • the method of calculating the composition of a III-V compound that has a particular lattice constant is a straightforward application of Vegard's law and is well known in the art. (See Physics of III-V Compounds, Madelung and Meyerhofer, Wiley, N.Y., 1964, page 272).
  • combinations of a garnet substrate with a III-V semiconductor compound are indicated in Table I, which shows for each of three garnets the lattice constants of the garnet, a ternary or quaternary III-V semiconductor compound with lattice constant half that of the garnet, and the wavelength of light emitted by a laser formed from that III-V compound.
  • Table I shows for each of three garnets the lattice constants of the garnet, a ternary or quaternary III-V semiconductor compound with lattice constant half that of the garnet, and the wavelength of light emitted by a laser formed from that III-V compound.
  • Other combinations of garnets and III-V compounds will be apparent to those skilled in the art.
  • optically pumped lasers may be formed from the materials shown in Table I.
  • the garnets are transparent and lossless at wavelengths considered.
  • the invention may be used for the production of light-emitting diodes of desired frequency, where the frequency of the light emitted depends on the chemical composition of the device and therefore on the lattice constant.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

  • This invention relates to devices including a first crystalline layer and a second crystalline layer epitaxially formed on at least a portion of the first layer.
  • Whilst hetero-epitaxy is known to be possible between materials whose lattice constants in the free crystalline state are not closely matched, examples of such epitaxial systems, including gallium arsenide on gadolinium gallium garnet, being disclosed in Belgian patent No. 751.978, it is only at the expense of interfacial stresses which tend to produce imperfections near the interface. Lattice matching, in which the materials are chosen so that the lattice constants are very closely equal to one another, is known as a means for avoiding such stresses, but this greatly limits the choice of materials which can be combined in an epitaxial structure.
  • One known technique for combining materials with different lattice constants, which is disclosed in U.S. patent No. 4,032,951, is to form an intermediate layer of graded chemical composition to provide a transition zone between one lattice constant and the other.
  • In the invention as claimed the lattice constants of the materials differ by a factor which is substantially equal to an integer other than unity. We have found that by this means the advantages known to arise from lattice matching can be obtained with combinations of materials which were previously considered to be incompatible from the point of view of lattice-matched epitaxy.
  • For example it is highly desirable to be able to combine in one integrated optical device an electro-optic device such as a semiconductor injection laser with a magneto-optic device such as an optical switch, and for this purpose it is desirable to have an epitaxial system comprising a semiconductor layer and a garnet layer. With our invention it is possible to provide such a system' without foregoing the advantages of lattice-matched epitaxy.
  • Some embodiments of the invention will now be described by way of example with reference to the accompanying drawings of which:-
    • FIG. 1 shows an injection diode laser constructed according to the invention;
    • FIG. 2 shows a pictorial view of an integrated optical circuit including magnetic and optical devices;
    • FIG. 2A shows a section through FIG. 2;
      and
    • FIG. 3 shows a plot of the lattice constants of the iron, aluminium and gallium garnets against ionic radius of the added rare-earth element.
  • As an illustration of a device constructed according to the invention, consider the double heterostructure injection diode laser shown in FIG. 1, in which a first crystalline layer, garnet substrate 1, which is suitable for magneto-optic devices, has an epitaxially grown second crystalline layer of an n-type III-V semiconductor 2 that is conductive and serves both as the n-buffer layer and as one contact. The double heterostructure of the diode laser includes an active region 3, p-cladding layer 4, p+ layer 5 and contact 6 in conventional fashion.
  • Illustratively, substrate I is Yttrium Aluminum Garnet (YAG) having a lattice constant of 1.2 nm and the III-V compound of layer 2 is AllnAs, compounded to have a lattice constant of 0.6 nm and an energy gap of .68 eV, capable of emitting radiation at 1.82 µm.
  • In FIG. 2, an integrated-optics device for generating an optical carrier, modulating the carrier and' transmitting the modulated carrier into a fiber-optic waveguide is shown in which substrate 11 and thin. film waveguide 12 are formed of a garnet and a III-V compound respectively, with lattice constants adjusted for an integral ratio.
  • Laser 13 is another version of the semiconductor injection laser known as the twin-guide laser, in which laser light generated in active layer 14 is coupled to waveguide 12 below, through a tapered transition. Waveguide 12 also serves as one of the electric contacts of the laser. Layers 4', 5', and 6' are equivalent to layers 4, 5, and 6 in FIG. 1. The radiation from laser 13 then travels through waveguide 12 into and out of a magneto-optic switch 15 which is formed from a garnet-based material directly on garnet substrate 11. The method of the coupling using tapered edges of the films and the magneto-optic switch described here are earlier inventions of the present inventor (U.S. Patent 3,764,195 and 4,806,226). The laser, switch and waveguides of various shapes can be grown on the garnet substrate by the method of "selective growth" which is well known in epitaxial technology. Switch 15, controlled by electronics logic circuit 16, illustratively a time-division multiplexer that combines input bit streams (arriving on contacts not shown), forms a modulated radiation beam that continues through waveguide 12 to optical fiber 17 for transmission.
  • FIG. 2A shows a section along waveguide 12 through the centerline of devices 13 and 15 and of waveguide 12, indicating by cross-hatching the garnet and semiconductor components of the device. In particular, active region 14 of laser 1 and waveguide 12 are both formed from lll-V semiconductors (differently doped), and magneto-optic switch 15 and substrate 11 are formed from garnet-based compounds.
  • FIG. 3 shows a graph plotting the lattice constants of all the iron, gallium and aluminum garnets against ionic radius of the added rare-earth element. Individual elements are indicated at the appropriate ionic radius, and the positions of three well-known garnets are indicated by circles - GGG (Gd-Ga-Gamet); YAG (Y-AI-Garnet) and LuAG (Lu-Al-Garnet).
  • The graph provides the numerical value of the lattice constant of a particular garnet compound, so that an appropriate III-V semiconductor may be formed to provide an integral ratio of lattice, constants. The method of calculating the composition of a III-V compound that has a particular lattice constant is a straightforward application of Vegard's law and is well known in the art. (See Physics of III-V Compounds, Madelung and Meyerhofer, Wiley, N.Y., 1964, page 272).
  • As an example, combinations of a garnet substrate with a III-V semiconductor compound are indicated in Table I, which shows for each of three garnets the lattice constants of the garnet, a ternary or quaternary III-V semiconductor compound with lattice constant half that of the garnet, and the wavelength of light emitted by a laser formed from that III-V compound. Other combinations of garnets and III-V compounds will be apparent to those skilled in the art.
  • In addition to the injection laser described above and shown in FIG. 1, optically pumped lasers may be formed from the materials shown in Table I. The garnets are transparent and lossless at wavelengths considered. The indices of refraction differ considerably (n=1.8 or 1.9 for the garnets, and n>3.2 for the III-V compounds) so that excellent waveguides and lasers can be made.
  • In addition to the production of solid state lasers, the invention may be used for the production of light-emitting diodes of desired frequency, where the frequency of the light emitted depends on the chemical composition of the device and therefore on the lattice constant.
  • It is also possible to apply the invention to electrical devices other than those considered above, so that new combinations of compounds will be possible in the fabrication of transistors and other electronic devices.
    Figure imgb0001

Claims (10)

1. A device including a first crystalline layer (1, 11) of a material which in the free crystalline state has a lattice constant A, and a second crystalline layer (2, 12) epitaxially formed on at least a portion of the first layer and of a material which in the free crystalline state has a lattice constant A2 characterised in that one of the two ratios A1/A2 and A2/A1 of the said lattice constants is substantially equal to an integer other than unity.
2. A device as claimed in claim 1 wherein the second layer (2, 12) is of a semiconductor material.
3. A device as claimed in claim 2 wherein the semiconductor is a compound comprising elements from groups III and V of the periodic table of elements.
4. A device as claimed in any of the preceding claims wherein the first layer (1, 11) is of a garnet material.
5. A device as claimed in claim 4 as dependent on claim 3 wherein the garnet material is lutetium-aluminium-garnet, yttrium-aluminium-garnet or gadolinium-gallium-garnet and the semiconductor material is a substituted III-V compound having a lattice constant substantially equal to half the lattice constant of the garnet.
6. A device as claimed in any of the preceding claims comprising at least two optical devices (13, 15) epitaxially grown respectively on the second layer and directly on the first layer.
7. A device as claimed in claim 6 wherein one of the devices (15) is a magneto-optical device.
8. A device as claimed in claim 6 or claim 7 wherein one of the devices (13) is an electro-optical device.
9. A device as claimed in claim 8 wherein the electro-optical device is a light-emitting device.
10. A device as claimed in claim 9 wherein the light-emitting device is a solid-state injection laser.
EP78300157A 1977-07-14 1978-07-17 Devices including epitaxial layers of dissimilar crystalline materials Expired EP0000638B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/815,720 US4136350A (en) 1977-07-14 1977-07-14 Epitaxial growth of dissimilar materials
US815720 1991-12-30

Publications (2)

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EP0000638A1 EP0000638A1 (en) 1979-02-07
EP0000638B1 true EP0000638B1 (en) 1981-02-25

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EP (1) EP0000638B1 (en)
JP (1) JPS5420664A (en)
CA (1) CA1093218A (en)
DE (1) DE2860501D1 (en)

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
FR2435816A1 (en) * 1978-09-08 1980-04-04 Radiotechnique Compelec METHOD FOR PRODUCING, BY EPITAXY, A SEMICONDUCTOR DEVICE WITH MULTI-LAYERED STRUCTURE AND APPLICATION THEREOF
FR2517831A2 (en) * 1981-12-04 1983-06-10 Thomson Csf MEASURING HEAD FOR MAGNETOMETER AND MAGNETOMETER COMPRISING SUCH A HEAD
JPS59107588A (en) * 1982-12-10 1984-06-21 Fujitsu Ltd Optical semiconductor device
EP0137851B1 (en) * 1983-02-10 1990-05-16 Matsushita Electric Industrial Co., Ltd. Optical switch
NL8303446A (en) * 1983-10-07 1985-05-01 Philips Nv COMPONENT FOR AN INTEGRATED OPTICAL SYSTEM.
US4699449A (en) * 1985-03-05 1987-10-13 Canadian Patents And Development Limited-Societe Canadienne Des Brevets Et D'exploitation Limitee Optoelectronic assembly and method of making the same
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
DE3520991A1 (en) * 1985-06-12 1986-12-18 Philips Patentverwaltung Gmbh, 2000 Hamburg MAGNETO-OPTICAL WAVE LEAD STRUCTURE FOR CONVERSION OF FASHIONS GUIDED IN THE STRUCTURE
JPS61287186A (en) * 1985-06-13 1986-12-17 Mitsubishi Electric Corp Optical isolator integration type semiconductor laser device
FR2595509B1 (en) * 1986-03-07 1988-05-13 Thomson Csf COMPONENT IN SEMICONDUCTOR MATERIAL EPITAXIA ON A SUBSTRATE WITH DIFFERENT MESH PARAMETER AND APPLICATION TO VARIOUS SEMICONDUCTOR COMPONENTS
JPS63181352A (en) * 1987-01-22 1988-07-26 Yokogawa Electric Corp Semiconductor substrate
US4943133A (en) * 1988-08-08 1990-07-24 Bell Communications Research, Inc. Low loss semiconductor optical phase modulator
US5175787A (en) * 1991-05-28 1992-12-29 Allied-Signal Inc. Birefringent optical waveguides of aluminum garnet
US5113472A (en) * 1991-05-28 1992-05-12 Allied-Signal Inc. Optical waveguides of aluminum garnet
US6927909B2 (en) * 2002-05-09 2005-08-09 Matsushita Electric Industrial Co., Ltd. Integrated magneto-optical modulator with optical isolator, method of manufacturing the same and optical communication system using the same
JP4860368B2 (en) * 2006-06-27 2012-01-25 富士フイルム株式会社 Garnet-type compounds and methods for producing the same
US7541105B2 (en) * 2006-09-25 2009-06-02 Seagate Technology Llc Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers

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BE751978A (en) * 1969-10-01 1970-11-16 North American Rockwell EPITAXIAL SETS AND THEIR MANUFACTURING
BE794853A (en) * 1972-02-02 1973-05-29 Western Electric Co GRANAT MONOCRISTAL OPTICAL WAVE GUIDE
JPS5012970A (en) * 1973-05-25 1975-02-10
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
DE2435415A1 (en) * 1974-07-23 1976-02-05 Siemens Ag ARRANGEMENT FOR DIRECT CONVERSION OF MAGNETICALLY STORED INFORMATION INTO OPTICAL SIGNALS
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses

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EP0000638A1 (en) 1979-02-07
DE2860501D1 (en) 1981-04-02
CA1093218A (en) 1981-01-06
JPS5636562B2 (en) 1981-08-25
US4136350A (en) 1979-01-23
JPS5420664A (en) 1979-02-16

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