JPS6350874B2 - - Google Patents

Info

Publication number
JPS6350874B2
JPS6350874B2 JP57195254A JP19525482A JPS6350874B2 JP S6350874 B2 JPS6350874 B2 JP S6350874B2 JP 57195254 A JP57195254 A JP 57195254A JP 19525482 A JP19525482 A JP 19525482A JP S6350874 B2 JPS6350874 B2 JP S6350874B2
Authority
JP
Japan
Prior art keywords
wavelength
semiconductor
layer
semiconductor laser
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57195254A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5986282A (ja
Inventor
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP19525482A priority Critical patent/JPS5986282A/ja
Publication of JPS5986282A publication Critical patent/JPS5986282A/ja
Publication of JPS6350874B2 publication Critical patent/JPS6350874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Semiconductor Lasers (AREA)
JP19525482A 1982-11-09 1982-11-09 半導体レ−ザ Granted JPS5986282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19525482A JPS5986282A (ja) 1982-11-09 1982-11-09 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19525482A JPS5986282A (ja) 1982-11-09 1982-11-09 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5986282A JPS5986282A (ja) 1984-05-18
JPS6350874B2 true JPS6350874B2 (enExample) 1988-10-12

Family

ID=16338069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19525482A Granted JPS5986282A (ja) 1982-11-09 1982-11-09 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5986282A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175789A (ja) * 1987-12-29 1989-07-12 Inkiyuubeetaa Japan:Kk 可視発光半導体レーザ装置
JP2546126B2 (ja) * 1993-04-06 1996-10-23 日本電気株式会社 半導体発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TECHNICAL DISRLOSURE BULLETIN *

Also Published As

Publication number Publication date
JPS5986282A (ja) 1984-05-18

Similar Documents

Publication Publication Date Title
US5384797A (en) Monolithic multi-wavelength laser diode array
US6300650B1 (en) Optical semiconductor device having a multilayer reflection structure
US5903586A (en) Long wavelength vertical cavity surface emitting laser
JPH09172229A (ja) 半導体ウェーハ・ボンディングによって製造された透明基板垂直共振型面発光レーザ
JPH09507339A (ja) 一体型レーザ・パワー・モニタ
KR910003465B1 (ko) 광 반도체장치
JP2746326B2 (ja) 半導体光素子
JPS6289391A (ja) 集積型レ−ザ受光素子の製造方法
US5404370A (en) Planar light emitting device having a reduced optical loss
US4982409A (en) Semiconductor laser device
US7638792B2 (en) Tunnel junction light emitting device
JPS6384186A (ja) トランスバ−ス・ジャンクション・ストライプ・レ−ザ
JPS62189785A (ja) 分布ブラツグ反射器を有する半導体装置
US4665527A (en) Distributed feedback semiconductor laser
JPH0211027B2 (enExample)
US7986721B2 (en) Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer
JP2757633B2 (ja) 面発光半導体レーザ
JPH01155678A (ja) 半導体発光装置
JP2518255B2 (ja) 多重量子井戸型光双安定半導体レ−ザ
US4691320A (en) Semiconductor structure and devices
JPS6148277B2 (enExample)
JPH0114716B2 (enExample)
KR100278630B1 (ko) 반도체 레이저 다이오드 및 그 제조방법
JPH03174793A (ja) 半導体レーザ
JPS59184585A (ja) 単一軸モ−ド半導体レ−ザ