JPS5986260A - ゲ−トタ−ンオフサイリスタ - Google Patents

ゲ−トタ−ンオフサイリスタ

Info

Publication number
JPS5986260A
JPS5986260A JP57195921A JP19592182A JPS5986260A JP S5986260 A JPS5986260 A JP S5986260A JP 57195921 A JP57195921 A JP 57195921A JP 19592182 A JP19592182 A JP 19592182A JP S5986260 A JPS5986260 A JP S5986260A
Authority
JP
Japan
Prior art keywords
gate
cathode
emitter layer
electrode plate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57195921A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0138381B2 (en, 2012
Inventor
Takahiro Nagano
隆洋 長野
Tsutomu Yao
勉 八尾
Saburo Oikawa
及川　三郎
Satoru Horie
哲 堀江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57195921A priority Critical patent/JPS5986260A/ja
Priority to CA000440851A priority patent/CA1201215A/en
Priority to DE8383111184T priority patent/DE3370899D1/de
Priority to EP83111184A priority patent/EP0111166B1/en
Priority to US06/550,586 priority patent/US4626888A/en
Publication of JPS5986260A publication Critical patent/JPS5986260A/ja
Publication of JPH0138381B2 publication Critical patent/JPH0138381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
JP57195921A 1982-11-10 1982-11-10 ゲ−トタ−ンオフサイリスタ Granted JPS5986260A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57195921A JPS5986260A (ja) 1982-11-10 1982-11-10 ゲ−トタ−ンオフサイリスタ
CA000440851A CA1201215A (en) 1982-11-10 1983-11-09 Gate turn-off thyristor
DE8383111184T DE3370899D1 (en) 1982-11-10 1983-11-09 Gate turn-off thyristor
EP83111184A EP0111166B1 (en) 1982-11-10 1983-11-09 Gate turn-off thyristor
US06/550,586 US4626888A (en) 1982-11-10 1983-11-10 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57195921A JPS5986260A (ja) 1982-11-10 1982-11-10 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS5986260A true JPS5986260A (ja) 1984-05-18
JPH0138381B2 JPH0138381B2 (en, 2012) 1989-08-14

Family

ID=16349193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57195921A Granted JPS5986260A (ja) 1982-11-10 1982-11-10 ゲ−トタ−ンオフサイリスタ

Country Status (5)

Country Link
US (1) US4626888A (en, 2012)
EP (1) EP0111166B1 (en, 2012)
JP (1) JPS5986260A (en, 2012)
CA (1) CA1201215A (en, 2012)
DE (1) DE3370899D1 (en, 2012)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254465A (ja) * 1985-09-02 1987-03-10 Hitachi Ltd 半導体装置
JPH0325258U (en, 2012) * 1989-07-24 1991-03-15
US5155574A (en) * 1990-03-20 1992-10-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2006191774A (ja) * 2005-01-07 2006-07-20 Toyota Motor Corp パワー制御回路および車両
JP2013534051A (ja) * 2010-06-21 2013-08-29 アーベーベー・テヒノロギー・アーゲー 局所のエミッタ短絡ドットの改善されたパターンを持つ位相制御サイリスタ
CN114220845A (zh) * 2021-12-15 2022-03-22 株洲中车时代半导体有限公司 功率半导体器件

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670334A5 (en, 2012) * 1986-09-16 1989-05-31 Bbc Brown Boveri & Cie
EP0328778B1 (de) * 1988-01-26 1992-03-11 Asea Brown Boveri Ag Hochleistungsschalter
JP2739970B2 (ja) * 1988-10-19 1998-04-15 株式会社東芝 圧接型半導体装置
DE58905844D1 (de) * 1989-02-02 1993-11-11 Asea Brown Boveri Druckkontaktiertes Halbleiterbauelement.
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
DE4234829C2 (de) * 1992-10-15 1996-01-18 Siemens Ag GTO-Thyristor
JP3319227B2 (ja) * 1995-06-29 2002-08-26 三菱電機株式会社 電力用圧接型半導体装置
JP3580794B2 (ja) * 1999-06-29 2004-10-27 三菱電機株式会社 電力用スイッチング半導体装置
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
DE102011079589A1 (de) * 2010-08-11 2012-02-16 Samsung Electronics Co., Ltd. Einheitspixel für ein Photodetektionsbauelement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130969A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Semiconductor device
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS5762562A (en) * 1980-10-03 1982-04-15 Hitachi Ltd Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564185B2 (de) * 1966-09-22 1972-11-23 International Rectifier Corp., El Segundo, Calif. (V.St A.) Schaltungsanordnung fuer einen steuerbaren halbleitergleichrichter sowie steuerbare halbleitergleichrichter hierzu
DE2064110A1 (de) * 1970-01-02 1971-07-08 Westinghouse Electric Corp Mittels einer Gate-Elektrode steuerbare Schalteinrichtung
JPS507427A (en, 2012) * 1973-05-18 1975-01-25
JPS54136186A (en) * 1978-04-14 1979-10-23 Hitachi Ltd Semiconductor device
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130969A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Semiconductor device
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS5762562A (en) * 1980-10-03 1982-04-15 Hitachi Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254465A (ja) * 1985-09-02 1987-03-10 Hitachi Ltd 半導体装置
JPH0325258U (en, 2012) * 1989-07-24 1991-03-15
US5155574A (en) * 1990-03-20 1992-10-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2006191774A (ja) * 2005-01-07 2006-07-20 Toyota Motor Corp パワー制御回路および車両
JP2013534051A (ja) * 2010-06-21 2013-08-29 アーベーベー・テヒノロギー・アーゲー 局所のエミッタ短絡ドットの改善されたパターンを持つ位相制御サイリスタ
CN114220845A (zh) * 2021-12-15 2022-03-22 株洲中车时代半导体有限公司 功率半导体器件

Also Published As

Publication number Publication date
EP0111166B1 (en) 1987-04-08
CA1201215A (en) 1986-02-25
DE3370899D1 (en) 1987-05-14
EP0111166A1 (en) 1984-06-20
US4626888A (en) 1986-12-02
JPH0138381B2 (en, 2012) 1989-08-14

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