JPS5984462A - 相補型ｍｏｓ半導体装置 - Google Patents

相補型ｍｏｓ半導体装置

Info

Publication number
JPS5984462A
JPS5984462A JP57193881A JP19388182A JPS5984462A JP S5984462 A JPS5984462 A JP S5984462A JP 57193881 A JP57193881 A JP 57193881A JP 19388182 A JP19388182 A JP 19388182A JP S5984462 A JPS5984462 A JP S5984462A
Authority
JP
Japan
Prior art keywords
well
substrate
type
semiconductor device
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57193881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255310B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Ito
浩 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57193881A priority Critical patent/JPS5984462A/ja
Publication of JPS5984462A publication Critical patent/JPS5984462A/ja
Publication of JPS6255310B2 publication Critical patent/JPS6255310B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57193881A 1982-11-04 1982-11-04 相補型ｍｏｓ半導体装置 Granted JPS5984462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57193881A JPS5984462A (ja) 1982-11-04 1982-11-04 相補型ｍｏｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57193881A JPS5984462A (ja) 1982-11-04 1982-11-04 相補型ｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS5984462A true JPS5984462A (ja) 1984-05-16
JPS6255310B2 JPS6255310B2 (enrdf_load_stackoverflow) 1987-11-19

Family

ID=16315287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57193881A Granted JPS5984462A (ja) 1982-11-04 1982-11-04 相補型ｍｏｓ半導体装置

Country Status (1)

Country Link
JP (1) JPS5984462A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260144A (ja) * 1984-06-06 1985-12-23 Sony Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260144A (ja) * 1984-06-06 1985-12-23 Sony Corp 半導体装置

Also Published As

Publication number Publication date
JPS6255310B2 (enrdf_load_stackoverflow) 1987-11-19

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