JPS5976534A - 低放射率コーテイングで被覆した透明基板およびその製造方法 - Google Patents
低放射率コーテイングで被覆した透明基板およびその製造方法Info
- Publication number
- JPS5976534A JPS5976534A JP17332083A JP17332083A JPS5976534A JP S5976534 A JPS5976534 A JP S5976534A JP 17332083 A JP17332083 A JP 17332083A JP 17332083 A JP17332083 A JP 17332083A JP S5976534 A JPS5976534 A JP S5976534A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silver
- oxide
- thick
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims description 43
- 239000011248 coating agent Substances 0.000 title claims description 33
- 230000005855 radiation Effects 0.000 title description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 122
- 239000004332 silver Substances 0.000 claims description 121
- 229910052709 silver Inorganic materials 0.000 claims description 120
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 75
- 229910052802 copper Inorganic materials 0.000 claims description 47
- 239000010949 copper Substances 0.000 claims description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 42
- 229910044991 metal oxide Inorganic materials 0.000 claims description 36
- 150000004706 metal oxides Chemical class 0.000 claims description 36
- 238000004544 sputter deposition Methods 0.000 claims description 36
- 229910001887 tin oxide Inorganic materials 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 239000011521 glass Substances 0.000 claims description 29
- 150000002739 metals Chemical class 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 230000003667 anti-reflective effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 238000002834 transmittance Methods 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052718 tin Inorganic materials 0.000 claims description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 17
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 6
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 6
- 238000005546 reactive sputtering Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 150000001879 copper Chemical class 0.000 claims description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims 1
- 229910001922 gold oxide Inorganic materials 0.000 claims 1
- 230000000638 stimulation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 128
- 239000000047 product Substances 0.000 description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 20
- 229910052719 titanium Inorganic materials 0.000 description 20
- 239000010936 titanium Substances 0.000 description 20
- 239000012298 atmosphere Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 6
- 239000005329 float glass Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- -1 copper and gold Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000619 316 stainless steel Inorganic materials 0.000 description 1
- 241000208140 Acer Species 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000971 Silver steel Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 239000005667 attractant Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000031902 chemoattractant activity Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8226833 | 1982-09-21 | ||
| GB8226833 | 1982-09-21 | ||
| GB8320881 | 1983-08-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5976534A true JPS5976534A (ja) | 1984-05-01 |
| JPH0524987B2 JPH0524987B2 (enExample) | 1993-04-09 |
Family
ID=10533061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17332083A Granted JPS5976534A (ja) | 1982-09-21 | 1983-09-21 | 低放射率コーテイングで被覆した透明基板およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5976534A (enExample) |
| ZA (1) | ZA836920B (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62196366A (ja) * | 1985-12-23 | 1987-08-29 | ピ−ピ−ジ− インダストリ−ズ，インコ−ポレ−テツド | 高透過率，低放射率物品 |
| JPS63183164A (ja) * | 1986-12-29 | 1988-07-28 | ピーピージー インダストリーズ，インコーポレーテツド | 高透過率、低輻射率の耐熱性の窓又はウインドシールド |
| JPS63274757A (ja) * | 1987-03-26 | 1988-11-11 | ピーピージー インダストリーズ，インコーポレーテツド | ビスマス・錫酸化物膜 |
| JP2008105251A (ja) * | 2006-10-25 | 2008-05-08 | Tokai Rubber Ind Ltd | 透明積層フィルムおよび透明積層体 |
| CN108137395A (zh) * | 2015-10-16 | 2018-06-08 | 法国圣戈班玻璃厂 | 用于快速退火含有铟顶层的薄层堆叠体的方法 |
| JP2020510596A (ja) * | 2017-03-01 | 2020-04-09 | ガーディアン・グラス・エルエルシーＧｕａｒｄｉａｎ Ｇｌａｓｓ， Ｌｌｃ | 銀系赤外線（ＩＲ）反射層を保護するための銀ドープ保護層を有する（低放射率）ｌｏｗ−Ｅコーティングを有するコーティングされた物品、及びその製造方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS569249A (en) * | 1979-06-30 | 1981-01-30 | Sanyo Shinku Kogyo Kk | Electrically conductive infrared shielding glass and its manufacture |
| JPS5634450A (en) * | 1979-08-31 | 1981-04-06 | Teijin Ltd | Laminate |
| JPS56126152A (en) * | 1980-03-10 | 1981-10-02 | Teijin Ltd | Laminate |
| JPS56154053A (en) * | 1980-03-25 | 1981-11-28 | Ex Cell O Corp | Vacuum evaporated product |
| JPS56169056A (en) * | 1980-06-02 | 1981-12-25 | Teijin Ltd | Laminate |
| JPS571755A (en) * | 1980-06-04 | 1982-01-06 | Teijin Ltd | Laminate |
| JPS571754A (en) * | 1980-06-04 | 1982-01-06 | Teijin Ltd | Laminate |
| JPS5713172A (en) * | 1980-06-28 | 1982-01-23 | Agency Of Ind Science & Technol | Formation of selective absorption menbrane for solar energy by vacuum plating method |
| JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
| DE3307661A1 (de) * | 1983-03-04 | 1984-09-06 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum herstellen von scheiben mit hohem transmissionsverhalten im sichtbaren spektralbereich und mit hohem reflexionsverhalten fuer waermestrahlung |
-
1983
- 1983-09-16 ZA ZA836920A patent/ZA836920B/xx unknown
- 1983-09-21 JP JP17332083A patent/JPS5976534A/ja active Granted
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS569249A (en) * | 1979-06-30 | 1981-01-30 | Sanyo Shinku Kogyo Kk | Electrically conductive infrared shielding glass and its manufacture |
| JPS5634450A (en) * | 1979-08-31 | 1981-04-06 | Teijin Ltd | Laminate |
| JPS56126152A (en) * | 1980-03-10 | 1981-10-02 | Teijin Ltd | Laminate |
| JPS56154053A (en) * | 1980-03-25 | 1981-11-28 | Ex Cell O Corp | Vacuum evaporated product |
| JPS56169056A (en) * | 1980-06-02 | 1981-12-25 | Teijin Ltd | Laminate |
| JPS571755A (en) * | 1980-06-04 | 1982-01-06 | Teijin Ltd | Laminate |
| JPS571754A (en) * | 1980-06-04 | 1982-01-06 | Teijin Ltd | Laminate |
| JPS5713172A (en) * | 1980-06-28 | 1982-01-23 | Agency Of Ind Science & Technol | Formation of selective absorption menbrane for solar energy by vacuum plating method |
| JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
| DE3307661A1 (de) * | 1983-03-04 | 1984-09-06 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum herstellen von scheiben mit hohem transmissionsverhalten im sichtbaren spektralbereich und mit hohem reflexionsverhalten fuer waermestrahlung |
| JPS59165001A (ja) * | 1983-03-04 | 1984-09-18 | ライボルト・アクチェンゲゼルシャフト | 可視スペクトル領域中の高透過特性および熱線に対する高反射特性を有する板ガラス、およびその製造法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62196366A (ja) * | 1985-12-23 | 1987-08-29 | ピ−ピ−ジ− インダストリ−ズ，インコ−ポレ−テツド | 高透過率，低放射率物品 |
| JPS63183164A (ja) * | 1986-12-29 | 1988-07-28 | ピーピージー インダストリーズ，インコーポレーテツド | 高透過率、低輻射率の耐熱性の窓又はウインドシールド |
| JPS63274757A (ja) * | 1987-03-26 | 1988-11-11 | ピーピージー インダストリーズ，インコーポレーテツド | ビスマス・錫酸化物膜 |
| JP2008105251A (ja) * | 2006-10-25 | 2008-05-08 | Tokai Rubber Ind Ltd | 透明積層フィルムおよび透明積層体 |
| CN108137395A (zh) * | 2015-10-16 | 2018-06-08 | 法国圣戈班玻璃厂 | 用于快速退火含有铟顶层的薄层堆叠体的方法 |
| JP2020510596A (ja) * | 2017-03-01 | 2020-04-09 | ガーディアン・グラス・エルエルシーＧｕａｒｄｉａｎ Ｇｌａｓｓ， Ｌｌｃ | 銀系赤外線（ＩＲ）反射層を保護するための銀ドープ保護層を有する（低放射率）ｌｏｗ−Ｅコーティングを有するコーティングされた物品、及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| ZA836920B (en) | 1985-04-24 |
| JPH0524987B2 (enExample) | 1993-04-09 |
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