JPS5976419A - ｐ型シリコン膜の製造方法 - Google Patents

ｐ型シリコン膜の製造方法

Info

Publication number
JPS5976419A
JPS5976419A JP57186754A JP18675482A JPS5976419A JP S5976419 A JPS5976419 A JP S5976419A JP 57186754 A JP57186754 A JP 57186754A JP 18675482 A JP18675482 A JP 18675482A JP S5976419 A JPS5976419 A JP S5976419A
Authority
JP
Japan
Prior art keywords
silicon film
type silicon
vacuum chamber
doping
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57186754A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6361768B2 (enrdf_load_stackoverflow
Inventor
Sunao Matsubara
松原　直
Juichi Shimada
嶋田　寿一
Masatoshi Utaka
正俊 右高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57186754A priority Critical patent/JPS5976419A/ja
Publication of JPS5976419A publication Critical patent/JPS5976419A/ja
Publication of JPS6361768B2 publication Critical patent/JPS6361768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP57186754A 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法 Granted JPS5976419A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57186754A JPS5976419A (ja) 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57186754A JPS5976419A (ja) 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5976419A true JPS5976419A (ja) 1984-05-01
JPS6361768B2 JPS6361768B2 (enrdf_load_stackoverflow) 1988-11-30

Family

ID=16194051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57186754A Granted JPS5976419A (ja) 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5976419A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214179A (ja) * 1986-03-17 1987-09-19 Nec Corp 薄膜形成装置
EP0735597A3 (en) * 1995-03-30 1997-06-04 Sharp Kk Silicon solar cell and manufacturing process
JP2004297008A (ja) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology ｐ型半導体材料、その作製方法、その作製装置、光電変換素子、発光素子、および薄膜トランジスタ
JP2005268481A (ja) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd 非単結晶太陽電池およびｐ型半導体材料を作製する作製装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214179A (ja) * 1986-03-17 1987-09-19 Nec Corp 薄膜形成装置
EP0735597A3 (en) * 1995-03-30 1997-06-04 Sharp Kk Silicon solar cell and manufacturing process
JP2004297008A (ja) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology ｐ型半導体材料、その作製方法、その作製装置、光電変換素子、発光素子、および薄膜トランジスタ
JP2005268481A (ja) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd 非単結晶太陽電池およびｐ型半導体材料を作製する作製装置

Also Published As

Publication number Publication date
JPS6361768B2 (enrdf_load_stackoverflow) 1988-11-30

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