JPS6361768B2 - - Google Patents

Info

Publication number
JPS6361768B2
JPS6361768B2 JP57186754A JP18675482A JPS6361768B2 JP S6361768 B2 JPS6361768 B2 JP S6361768B2 JP 57186754 A JP57186754 A JP 57186754A JP 18675482 A JP18675482 A JP 18675482A JP S6361768 B2 JPS6361768 B2 JP S6361768B2
Authority
JP
Japan
Prior art keywords
silicon film
type silicon
doping
doped
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57186754A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5976419A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57186754A priority Critical patent/JPS5976419A/ja
Publication of JPS5976419A publication Critical patent/JPS5976419A/ja
Publication of JPS6361768B2 publication Critical patent/JPS6361768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP57186754A 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法 Granted JPS5976419A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57186754A JPS5976419A (ja) 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57186754A JPS5976419A (ja) 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5976419A JPS5976419A (ja) 1984-05-01
JPS6361768B2 true JPS6361768B2 (enrdf_load_stackoverflow) 1988-11-30

Family

ID=16194051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57186754A Granted JPS5976419A (ja) 1982-10-26 1982-10-26 ｐ型シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5976419A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214179A (ja) * 1986-03-17 1987-09-19 Nec Corp 薄膜形成装置
JPH08330611A (ja) * 1995-03-30 1996-12-13 Sharp Corp シリコン太陽電池セルとその製造方法
JP2004297008A (ja) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology ｐ型半導体材料、その作製方法、その作製装置、光電変換素子、発光素子、および薄膜トランジスタ
JP4691888B2 (ja) * 2004-03-18 2011-06-01 凸版印刷株式会社 非単結晶太陽電池および非単結晶太陽電池の製造方法

Also Published As

Publication number Publication date
JPS5976419A (ja) 1984-05-01

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