JPS5974650A - 相互接続金属系の形成方法 - Google Patents

相互接続金属系の形成方法

Info

Publication number
JPS5974650A
JPS5974650A JP58172350A JP17235083A JPS5974650A JP S5974650 A JPS5974650 A JP S5974650A JP 58172350 A JP58172350 A JP 58172350A JP 17235083 A JP17235083 A JP 17235083A JP S5974650 A JPS5974650 A JP S5974650A
Authority
JP
Japan
Prior art keywords
metal
metal layer
deposition
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58172350A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0212011B2 (enExample
Inventor
ジヨセフ・ジヨン・ガジダ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5974650A publication Critical patent/JPS5974650A/ja
Publication of JPH0212011B2 publication Critical patent/JPH0212011B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/412—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP58172350A 1982-09-20 1983-09-20 相互接続金属系の形成方法 Granted JPS5974650A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/420,174 US4393096A (en) 1981-11-16 1982-09-20 Aluminum-copper alloy evaporated films with low via resistance
US420174 1982-09-20

Publications (2)

Publication Number Publication Date
JPS5974650A true JPS5974650A (ja) 1984-04-27
JPH0212011B2 JPH0212011B2 (enExample) 1990-03-16

Family

ID=23665379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172350A Granted JPS5974650A (ja) 1982-09-20 1983-09-20 相互接続金属系の形成方法

Country Status (4)

Country Link
US (1) US4393096A (enExample)
EP (1) EP0103855B1 (enExample)
JP (1) JPS5974650A (enExample)
DE (1) DE3377551D1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134426A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 液晶デイスプレイ駆動用薄膜トランジスタ
JPH02170419A (ja) * 1988-12-22 1990-07-02 Nec Corp Ａｌ―Ｃｕ合金薄膜形成方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3782904T2 (de) * 1986-09-17 1993-04-08 Fujitsu Ltd Verfahren zur ausbildung einer kupfer enthaltenden metallisierungsschicht auf der oberflaeche eines halbleiterbauelementes.
EP0349696A1 (en) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of depositing metal on an aluminium substrate
US5023994A (en) * 1988-09-29 1991-06-18 Microwave Power, Inc. Method of manufacturing a microwave intergrated circuit substrate including metal lined via holes
JPH0479908U (enExample) * 1990-11-21 1992-07-13
US5143867A (en) * 1991-02-13 1992-09-01 International Business Machines Corporation Method for depositing interconnection metallurgy using low temperature alloy processes
US5175125A (en) * 1991-04-03 1992-12-29 Chartered Semiconductor Manufacturing Ltd. Pte Method for making electrical contacts
US5980657A (en) * 1998-03-10 1999-11-09 Micron Technology, Inc. Alloy for enhanced filling of high aspect ratio dual damascene structures
US6316356B1 (en) 1998-03-10 2001-11-13 Micron Technology, Inc. Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
US6613671B1 (en) 2000-03-03 2003-09-02 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
US9773736B2 (en) * 2015-01-28 2017-09-26 Infineon Technologies Ag Intermediate layer for copper structuring and methods of formation thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
NL87258C (enExample) * 1969-01-15
US3631305A (en) * 1970-12-17 1971-12-28 Cogar Corp Improved semiconductor device and electrical conductor
US3716469A (en) * 1970-12-17 1973-02-13 Cogar Corp Fabrication method for making an aluminum alloy having a high resistance to electromigration
US3830657A (en) * 1971-06-30 1974-08-20 Ibm Method for making integrated circuit contact structure
US3743894A (en) * 1972-06-01 1973-07-03 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
US3987216A (en) * 1975-12-31 1976-10-19 International Business Machines Corporation Method of forming schottky barrier junctions having improved barrier height
US4062720A (en) * 1976-08-23 1977-12-13 International Business Machines Corporation Process for forming a ledge-free aluminum-copper-silicon conductor structure
US4070501A (en) * 1976-10-28 1978-01-24 Ibm Corporation Forming self-aligned via holes in thin film interconnection systems
US4111775A (en) * 1977-07-08 1978-09-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multilevel metallization method for fabricating a metal oxide semiconductor device
US4184909A (en) * 1978-08-21 1980-01-22 International Business Machines Corporation Method of forming thin film interconnection systems

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134426A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 液晶デイスプレイ駆動用薄膜トランジスタ
JPH02170419A (ja) * 1988-12-22 1990-07-02 Nec Corp Ａｌ―Ｃｕ合金薄膜形成方法

Also Published As

Publication number Publication date
EP0103855B1 (en) 1988-07-27
US4393096A (en) 1983-07-12
EP0103855A3 (en) 1985-07-31
DE3377551D1 (en) 1988-09-01
EP0103855A2 (en) 1984-03-28
JPH0212011B2 (enExample) 1990-03-16

Similar Documents

Publication Publication Date Title
US7358185B2 (en) Device having contact pad with a conductive layer and a conductive passivation layer
US6121685A (en) Metal-alloy interconnections for integrated circuits
US3290570A (en) Multilevel expanded metallic contacts for semiconductor devices
JPS5974650A (ja) 相互接続金属系の形成方法
TW504766B (en) Method of manufacturing electronic components
JPH04259242A (ja) 半導体装置の製造方法
US5283206A (en) Method of removing germanium particles precipitated in an aluminum/germanium alloy film
US3341753A (en) Metallic contacts for semiconductor devices
US3562040A (en) Method of uniformally and rapidly etching nichrome
US4022931A (en) Process for making semiconductor device
KR0179827B1 (ko) 반도체 소자의 배선 형성방법
US5077100A (en) Method for forming electrical connections between copper conductors
KR101132700B1 (ko) 반도체 소자의 금속배선 및 그 형성방법
JPS60136337A (ja) ２重層処理においてヒロツク抑制層を形成する方法及びその構造物
CN100387738C (zh) 用于互连的自密封的银合金
KR910008104B1 (ko) 다수준 금속화 구조물을 지닌 반도체 디바이스 및 이의 제조방법
JPH0974097A (ja) バリアメタルの形成方法
US4282266A (en) Method for determining silicon content in layers of aluminum and silicon
USRE27325E (en) Multilevel ohmic contacts for semiconductor devices
JP2000183063A (ja) 半導体装置及びその製造方法
KR940008375B1 (ko) 반도체 소자의 제조방법
JPS6312155A (ja) 半導体装置の製造方法
JPH0467635A (ja) 配線の形成方法
JPH06310508A (ja) 半導体装置の製造方法
JPH06163545A (ja) 半導体装置の配線構造及びその製造方法