DE3377551D1 - Process for integrated circuit metallization with low via resistance - Google Patents
Process for integrated circuit metallization with low via resistanceInfo
- Publication number
- DE3377551D1 DE3377551D1 DE8383109120T DE3377551T DE3377551D1 DE 3377551 D1 DE3377551 D1 DE 3377551D1 DE 8383109120 T DE8383109120 T DE 8383109120T DE 3377551 T DE3377551 T DE 3377551T DE 3377551 D1 DE3377551 D1 DE 3377551D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- via resistance
- low via
- circuit metallization
- metallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001465 metallisation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/420,174 US4393096A (en) | 1981-11-16 | 1982-09-20 | Aluminum-copper alloy evaporated films with low via resistance |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3377551D1 true DE3377551D1 (en) | 1988-09-01 |
Family
ID=23665379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383109120T Expired DE3377551D1 (en) | 1982-09-20 | 1983-09-15 | Process for integrated circuit metallization with low via resistance |
Country Status (4)
Country | Link |
---|---|
US (1) | US4393096A (de) |
EP (1) | EP0103855B1 (de) |
JP (1) | JPS5974650A (de) |
DE (1) | DE3377551D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3782904T2 (de) * | 1986-09-17 | 1993-04-08 | Fujitsu Ltd | Verfahren zur ausbildung einer kupfer enthaltenden metallisierungsschicht auf der oberflaeche eines halbleiterbauelementes. |
JPH01134426A (ja) * | 1987-11-20 | 1989-05-26 | Hitachi Ltd | 液晶デイスプレイ駆動用薄膜トランジスタ |
EP0349696A1 (de) * | 1988-07-08 | 1990-01-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Verfahren zur Metallabscheidung aus einem Aluminiumsubstrat |
US5023994A (en) * | 1988-09-29 | 1991-06-18 | Microwave Power, Inc. | Method of manufacturing a microwave intergrated circuit substrate including metal lined via holes |
JP2570839B2 (ja) * | 1988-12-22 | 1997-01-16 | 日本電気株式会社 | A▲l▼ーCu合金薄膜形成方法 |
JPH0479908U (de) * | 1990-11-21 | 1992-07-13 | ||
US5143867A (en) * | 1991-02-13 | 1992-09-01 | International Business Machines Corporation | Method for depositing interconnection metallurgy using low temperature alloy processes |
US5175125A (en) * | 1991-04-03 | 1992-12-29 | Chartered Semiconductor Manufacturing Ltd. Pte | Method for making electrical contacts |
US5980657A (en) * | 1998-03-10 | 1999-11-09 | Micron Technology, Inc. | Alloy for enhanced filling of high aspect ratio dual damascene structures |
US6316356B1 (en) | 1998-03-10 | 2001-11-13 | Micron Technology, Inc. | Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication |
US6613671B1 (en) * | 2000-03-03 | 2003-09-02 | Micron Technology, Inc. | Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby |
US9773736B2 (en) * | 2015-01-28 | 2017-09-26 | Infineon Technologies Ag | Intermediate layer for copper structuring and methods of formation thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
NL87258C (de) * | 1969-01-15 | |||
US3716469A (en) * | 1970-12-17 | 1973-02-13 | Cogar Corp | Fabrication method for making an aluminum alloy having a high resistance to electromigration |
US3631305A (en) * | 1970-12-17 | 1971-12-28 | Cogar Corp | Improved semiconductor device and electrical conductor |
US3830657A (en) * | 1971-06-30 | 1974-08-20 | Ibm | Method for making integrated circuit contact structure |
US3743894A (en) * | 1972-06-01 | 1973-07-03 | Motorola Inc | Electromigration resistant semiconductor contacts and the method of producing same |
US3987216A (en) * | 1975-12-31 | 1976-10-19 | International Business Machines Corporation | Method of forming schottky barrier junctions having improved barrier height |
US4062720A (en) * | 1976-08-23 | 1977-12-13 | International Business Machines Corporation | Process for forming a ledge-free aluminum-copper-silicon conductor structure |
US4070501A (en) * | 1976-10-28 | 1978-01-24 | Ibm Corporation | Forming self-aligned via holes in thin film interconnection systems |
US4111775A (en) * | 1977-07-08 | 1978-09-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multilevel metallization method for fabricating a metal oxide semiconductor device |
US4184909A (en) * | 1978-08-21 | 1980-01-22 | International Business Machines Corporation | Method of forming thin film interconnection systems |
JPS5789242A (en) * | 1980-11-25 | 1982-06-03 | Toshiba Corp | Fabrication of semiconductor device |
-
1982
- 1982-09-20 US US06/420,174 patent/US4393096A/en not_active Expired - Fee Related
-
1983
- 1983-09-15 DE DE8383109120T patent/DE3377551D1/de not_active Expired
- 1983-09-15 EP EP83109120A patent/EP0103855B1/de not_active Expired
- 1983-09-20 JP JP58172350A patent/JPS5974650A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
US4393096A (en) | 1983-07-12 |
JPS5974650A (ja) | 1984-04-27 |
EP0103855A2 (de) | 1984-03-28 |
JPH0212011B2 (de) | 1990-03-16 |
EP0103855A3 (en) | 1985-07-31 |
EP0103855B1 (de) | 1988-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |