JPS5968735A - 感光性組成物 - Google Patents
感光性組成物Info
- Publication number
- JPS5968735A JPS5968735A JP17932682A JP17932682A JPS5968735A JP S5968735 A JPS5968735 A JP S5968735A JP 17932682 A JP17932682 A JP 17932682A JP 17932682 A JP17932682 A JP 17932682A JP S5968735 A JPS5968735 A JP S5968735A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- mask
- polymer
- photosensitive composition
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- -1 poly(methylmethacrylate) Polymers 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 18
- 125000005375 organosiloxane group Chemical group 0.000 claims abstract description 11
- 229920000620 organic polymer Polymers 0.000 claims abstract description 10
- 229920001577 copolymer Polymers 0.000 claims abstract description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 3
- 239000007787 solid Substances 0.000 claims description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17932682A JPS5968735A (ja) | 1982-10-13 | 1982-10-13 | 感光性組成物 |
DE19833337303 DE3337303C2 (de) | 1982-10-13 | 1983-10-13 | Verfahren zur photolithographischen Erzeugung von feinen Resistmustern und hierfür verwendbare lichtempfindliche Gemische |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17932682A JPS5968735A (ja) | 1982-10-13 | 1982-10-13 | 感光性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5968735A true JPS5968735A (ja) | 1984-04-18 |
JPH0544665B2 JPH0544665B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Family
ID=16063877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17932682A Granted JPS5968735A (ja) | 1982-10-13 | 1982-10-13 | 感光性組成物 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5968735A (enrdf_load_stackoverflow) |
DE (1) | DE3337303C2 (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61289345A (ja) * | 1985-05-31 | 1986-12-19 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | リソグラフイ用レジスト |
JPS63291053A (ja) * | 1987-05-25 | 1988-11-28 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
US5378585A (en) * | 1990-06-25 | 1995-01-03 | Matsushita Electronics Corporation | Resist composition having a siloxane-bond structure |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0211161B1 (en) * | 1985-05-31 | 1990-02-28 | International Business Machines Corporation | Lithographic resists and method of using the same |
JPH0772799B2 (ja) * | 1986-08-13 | 1995-08-02 | ソニー株式会社 | レジスト材料 |
US5268256A (en) * | 1990-08-02 | 1993-12-07 | Ppg Industries, Inc. | Photoimageable electrodepositable photoresist composition for producing non-tacky films |
DE4228790C1 (de) | 1992-08-29 | 1993-11-25 | Du Pont Deutschland | Tonbares strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Mehrfarbenbildern mittels solch eines Gemischs |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50137202A (enrdf_load_stackoverflow) * | 1974-04-22 | 1975-10-31 | ||
JPS516561A (enrdf_load_stackoverflow) * | 1974-07-04 | 1976-01-20 | Yamamoto Kagaku Gosei Kk |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5525418B2 (enrdf_load_stackoverflow) * | 1972-12-20 | 1980-07-05 | ||
US4200463A (en) * | 1975-12-19 | 1980-04-29 | Motorola, Inc. | Semiconductor device manufacture using photoresist protective coating |
DE3022473A1 (de) * | 1980-06-14 | 1981-12-24 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung |
-
1982
- 1982-10-13 JP JP17932682A patent/JPS5968735A/ja active Granted
-
1983
- 1983-10-13 DE DE19833337303 patent/DE3337303C2/de not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50137202A (enrdf_load_stackoverflow) * | 1974-04-22 | 1975-10-31 | ||
JPS516561A (enrdf_load_stackoverflow) * | 1974-07-04 | 1976-01-20 | Yamamoto Kagaku Gosei Kk |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61289345A (ja) * | 1985-05-31 | 1986-12-19 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | リソグラフイ用レジスト |
JPS63291053A (ja) * | 1987-05-25 | 1988-11-28 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
US5378585A (en) * | 1990-06-25 | 1995-01-03 | Matsushita Electronics Corporation | Resist composition having a siloxane-bond structure |
US5547808A (en) * | 1990-06-25 | 1996-08-20 | Matsushita Electronics Corporation | Resist composition having a siloxane-bond structure |
US5554465A (en) * | 1990-06-25 | 1996-09-10 | Matsushita Electronics Corporation | Process for forming a pattern using a resist composition having a siloxane-bond structure |
Also Published As
Publication number | Publication date |
---|---|
DE3337303C2 (de) | 1987-03-26 |
DE3337303A1 (de) | 1984-04-19 |
JPH0544665B2 (enrdf_load_stackoverflow) | 1993-07-07 |
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