JPS5967680A - 光双安定素子 - Google Patents

光双安定素子

Info

Publication number
JPS5967680A
JPS5967680A JP57178757A JP17875782A JPS5967680A JP S5967680 A JPS5967680 A JP S5967680A JP 57178757 A JP57178757 A JP 57178757A JP 17875782 A JP17875782 A JP 17875782A JP S5967680 A JPS5967680 A JP S5967680A
Authority
JP
Japan
Prior art keywords
mesa stripe
active layer
layer
semiconductor layer
optical bistable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57178757A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641075B2 (enrdf_load_stackoverflow
Inventor
Isao Kobayashi
功郎 小林
Hitoshi Kawaguchi
仁司 河口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57178757A priority Critical patent/JPS5967680A/ja
Publication of JPS5967680A publication Critical patent/JPS5967680A/ja
Publication of JPS641075B2 publication Critical patent/JPS641075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions

Landscapes

  • Semiconductor Lasers (AREA)
JP57178757A 1982-10-12 1982-10-12 光双安定素子 Granted JPS5967680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57178757A JPS5967680A (ja) 1982-10-12 1982-10-12 光双安定素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57178757A JPS5967680A (ja) 1982-10-12 1982-10-12 光双安定素子

Publications (2)

Publication Number Publication Date
JPS5967680A true JPS5967680A (ja) 1984-04-17
JPS641075B2 JPS641075B2 (enrdf_load_stackoverflow) 1989-01-10

Family

ID=16054062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57178757A Granted JPS5967680A (ja) 1982-10-12 1982-10-12 光双安定素子

Country Status (1)

Country Link
JP (1) JPS5967680A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239083A (ja) * 1984-05-11 1985-11-27 Nec Corp 光双安定半導体レ−ザ
US5543355A (en) * 1994-04-18 1996-08-06 Nec Corporation Method for manufacturing semiconductor laser device having current blocking layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239083A (ja) * 1984-05-11 1985-11-27 Nec Corp 光双安定半導体レ−ザ
US5543355A (en) * 1994-04-18 1996-08-06 Nec Corporation Method for manufacturing semiconductor laser device having current blocking layers

Also Published As

Publication number Publication date
JPS641075B2 (enrdf_load_stackoverflow) 1989-01-10

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