JPS5963737A - 布線の接続方法 - Google Patents
布線の接続方法Info
- Publication number
- JPS5963737A JPS5963737A JP57173230A JP17323082A JPS5963737A JP S5963737 A JPS5963737 A JP S5963737A JP 57173230 A JP57173230 A JP 57173230A JP 17323082 A JP17323082 A JP 17323082A JP S5963737 A JPS5963737 A JP S5963737A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- diameter
- bonding
- pad
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
- H01R43/0207—Ultrasonic-, H.F.-, cold- or impact welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45155—Nickel (Ni) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/48686—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/4917—Crossed wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
- H01R4/62—Connections between conductors of different materials; Connections between or with aluminium or steel-core aluminium conductors
- H01R4/625—Soldered or welded connections
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は布線を電子回路のパッドに接続する方法に関す
る。特に多数の布線をハイブリッドモジュールなどの微
少エリアに接続するのに好適外布線の接線方法に関する
。
る。特に多数の布線をハイブリッドモジュールなどの微
少エリアに接続するのに好適外布線の接線方法に関する
。
従来の布線の接続方法はCo芯線に、Auメッキを1施
し、芯線の表面に絶縁被膜としテフロン、ポリウレタン
などの樹脂をコートした線を使用し、接続はこの被膜を
超音波で除去した后熱圧着で接続する方法が一般的方法
である。しかしながらこの方法では被覆線が太くなるこ
とにより接続エリアが大きくなること、被覆除去后熱圧
着と2ステツプの作業になシエ数が大きいこと、被覆の
完全除去が#L<接続信頼性が悪いなどの欠点があった
。
し、芯線の表面に絶縁被膜としテフロン、ポリウレタン
などの樹脂をコートした線を使用し、接続はこの被膜を
超音波で除去した后熱圧着で接続する方法が一般的方法
である。しかしながらこの方法では被覆線が太くなるこ
とにより接続エリアが大きくなること、被覆除去后熱圧
着と2ステツプの作業になシエ数が大きいこと、被覆の
完全除去が#L<接続信頼性が悪いなどの欠点があった
。
本発明の目的は従来の布線ボンデングエリアより小さな
エリアにボンデング出来且つボンデング作業が簡単で信
頼性も高い布線の接続方法を提供することにある。
エリアにボンデング出来且つボンデング作業が簡単で信
頼性も高い布線の接続方法を提供することにある。
布線のボンデング(接続)エリアを小さくするにはワイ
ヤ径を小さくする必要がある、この目的には被覆厚を小
さくすることが良い。又ボンデング方法に於て作業性で
は被覆除去とボンデングが同時に出来ることが良い。又
信頼度上問題なのは被覆残りがボンデング部にないこと
が良い。これらの要求に応えるべく、本発明はアルマイ
ト処理したアルミ線を超音波ワイヤボンデングで接続す
ることを特徴とする。
ヤ径を小さくする必要がある、この目的には被覆厚を小
さくすることが良い。又ボンデング方法に於て作業性で
は被覆除去とボンデングが同時に出来ることが良い。又
信頼度上問題なのは被覆残りがボンデング部にないこと
が良い。これらの要求に応えるべく、本発明はアルマイ
ト処理したアルミ線を超音波ワイヤボンデングで接続す
ることを特徴とする。
以下本発明の一実施例を第1図〜第4図により説明する
。第1図は本発明を適用しているハイブリットモジー−
ルの平面図である、第2図は第1図の側面図である。ア
ルミナセラミックの多層配線基板2に半導体ペレット4
を2個塔載し、ペレットの周凹に補修パッド3が配置さ
れている、パッドの表面にはAuメッキが1〜2μm厚
施されており、このパッドの一部に補修布線1がボンデ
ングされている。パッドには1本〜2本のボンデングが
必要である。又1′も補修布線であるが、補修布線1と
接触し交叉している。
。第1図は本発明を適用しているハイブリットモジー−
ルの平面図である、第2図は第1図の側面図である。ア
ルミナセラミックの多層配線基板2に半導体ペレット4
を2個塔載し、ペレットの周凹に補修パッド3が配置さ
れている、パッドの表面にはAuメッキが1〜2μm厚
施されており、このパッドの一部に補修布線1がボンデ
ングされている。パッドには1本〜2本のボンデングが
必要である。又1′も補修布線であるが、補修布線1と
接触し交叉している。
このようなハイブリッドモジュールに於ける補修布線を
実現するためには、従来の補修布線は第6図に示すごと
く芯線7がテフロン、ウレタンなどの樹脂による被覆6
を使用していた。このため第3図で示す接続部の形状(
B)が大きくなシ、パッド3のサイズを大きくする必要
かあった。そこで補修布線にアルマイト処理したア。
実現するためには、従来の補修布線は第6図に示すごと
く芯線7がテフロン、ウレタンなどの樹脂による被覆6
を使用していた。このため第3図で示す接続部の形状(
B)が大きくなシ、パッド3のサイズを大きくする必要
かあった。そこで補修布線にアルマイト処理したア。
ルミ線を使用する。第4図に本発明の場合を示ψ
す芯線7が50μmではアルマイト厚0.1μm〜1μ
mマ充分な絶縁性(1x108Ω以上)が得られること
ψ から線の外径は51μmで済む。従来は被覆厚が5〜1
0μmとなり、外径は60〜70μ累となる。一方接続
は通常の超音波ワイヤボンデングで接続が可能であシ、
この時の線のつぶれ巾は線径の1.5−2倍で接続でき
る。従ってこの時点での線径は第4図CB5で示すよう
に(51X2= ) 1[12μm巾となる。
mマ充分な絶縁性(1x108Ω以上)が得られること
ψ から線の外径は51μmで済む。従来は被覆厚が5〜1
0μmとなり、外径は60〜70μ累となる。一方接続
は通常の超音波ワイヤボンデングで接続が可能であシ、
この時の線のつぶれ巾は線径の1.5−2倍で接続でき
る。従ってこの時点での線径は第4図CB5で示すよう
に(51X2= ) 1[12μm巾となる。
従来方法では被覆がつぶれて6〜4倍に広がるだめ、第
6図(B)で示すように(,70X4→280μmの巾
となる。即ち本発明では従来のボンデングエリアの火、
以下にすることが可能となる。一方ボンデング方法は極
めて一般的な超音波ワイヤボンデ、7法ア可能アあ1.
51%n077、フィト処理した線では特に大きな条件
変更は必要としない。このため従来の補修布線ボンデン
グのように被覆を除去するため超音波を与え基板との摩
擦で線の一部の被覆を除去し、その后400〜50σC
加熱したテップで200〜5002の加重で加圧接着す
るような複雑な作業は不要である。耐熱性についても、
本発明によるアルミ線では5oocまでは充分に接続信
頼性を保つことから、補修后半田付、その他の加熱を鼻
施する場合でも充分信頼性を保つことが可能である0 〔発明の効果〕 以上のようにアルマイト処理したアルミ線を使用し超音
波ワイヤボンデングを行うことで径゛か51μml線を
使用すればノクット径が0.4程度あれば2本の線が充
分ボンデング出来、その后の耐熱性も良いことから、半
田付その他のカロ熱作業にも而=1える。尚補修布線層
気密封止すれば腐食断線もなく長寿命が得←れる。無論
近年アル。
6図(B)で示すように(,70X4→280μmの巾
となる。即ち本発明では従来のボンデングエリアの火、
以下にすることが可能となる。一方ボンデング方法は極
めて一般的な超音波ワイヤボンデ、7法ア可能アあ1.
51%n077、フィト処理した線では特に大きな条件
変更は必要としない。このため従来の補修布線ボンデン
グのように被覆を除去するため超音波を与え基板との摩
擦で線の一部の被覆を除去し、その后400〜50σC
加熱したテップで200〜5002の加重で加圧接着す
るような複雑な作業は不要である。耐熱性についても、
本発明によるアルミ線では5oocまでは充分に接続信
頼性を保つことから、補修后半田付、その他の加熱を鼻
施する場合でも充分信頼性を保つことが可能である0 〔発明の効果〕 以上のようにアルマイト処理したアルミ線を使用し超音
波ワイヤボンデングを行うことで径゛か51μml線を
使用すればノクット径が0.4程度あれば2本の線が充
分ボンデング出来、その后の耐熱性も良いことから、半
田付その他のカロ熱作業にも而=1える。尚補修布線層
気密封止すれば腐食断線もなく長寿命が得←れる。無論
近年アル。
ミ線ボンデング品を超クリーン化し、ノ・ロゲンイオン
(F、 t、 B;等)及びその他のアルミ線を腐食
させる物質を除去してレジン封止だけで信。
(F、 t、 B;等)及びその他のアルミ線を腐食
させる物質を除去してレジン封止だけで信。
粗性を得る方式が採用されているが、この方式(レジン
封止)でも可能である。
封止)でも可能である。
第1図及び第2図はそれぞれ本発明を適用したモジュー
ルを示す平面図及び側面図、第3図は従来のボンデング
ノくットの拡大図、第4図は本発明の場合のボンデング
ノ(ット拡大図を示す61.1′・・・補修布線、 2、・・・セラミック多層配線基板、 6、・・・パッド、 4、・・・ペレット、 5・・・リード、 6・・・被覆、 7・・・芯線、 代理人弁理士 薄 1)利 ah
ルを示す平面図及び側面図、第3図は従来のボンデング
ノくットの拡大図、第4図は本発明の場合のボンデング
ノ(ット拡大図を示す61.1′・・・補修布線、 2、・・・セラミック多層配線基板、 6、・・・パッド、 4、・・・ペレット、 5・・・リード、 6・・・被覆、 7・・・芯線、 代理人弁理士 薄 1)利 ah
Claims (1)
- 布線を電子回路のパッドに接続する方法において、アル
マイト処理したアルミ線を超音波ワイヤボンデングで接
続することを特徴とする布・線の接続方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57173230A JPS5963737A (ja) | 1982-10-04 | 1982-10-04 | 布線の接続方法 |
US06/535,055 US4580713A (en) | 1982-10-04 | 1983-09-23 | Method for bonding an aluminum wire |
DE19833335848 DE3335848A1 (de) | 1982-10-04 | 1983-10-03 | Verfahren zum verbinden eines aluminiumdrahtes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57173230A JPS5963737A (ja) | 1982-10-04 | 1982-10-04 | 布線の接続方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5963737A true JPS5963737A (ja) | 1984-04-11 |
Family
ID=15956553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57173230A Pending JPS5963737A (ja) | 1982-10-04 | 1982-10-04 | 布線の接続方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4580713A (ja) |
JP (1) | JPS5963737A (ja) |
DE (1) | DE3335848A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62217507A (ja) * | 1986-02-06 | 1987-09-25 | アルカン・インタ−ナシヨナル・リミテツド | 絶縁アルミニウム線及びその製法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3537551A1 (de) * | 1985-10-22 | 1987-04-23 | Delvotec S A | Bondkapillare sowie verfahren zum bonden unter verwendung einer derartigen bondkapillare |
US4860941A (en) * | 1986-03-26 | 1989-08-29 | Alcan International Limited | Ball bonding of aluminum bonding wire |
DE3851901T2 (de) * | 1987-01-26 | 1995-04-13 | Hitachi Ltd | Anschweissen eines Drahtes. |
US5152450A (en) * | 1987-01-26 | 1992-10-06 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method |
US5285949A (en) * | 1987-01-26 | 1994-02-15 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method |
US4928384A (en) * | 1987-03-24 | 1990-05-29 | Cooper Industries, Inc. | Method of making a wire bonded microfuse |
US4771260A (en) * | 1987-03-24 | 1988-09-13 | Cooper Industries, Inc. | Wire bonded microfuse and method of making |
US5031821A (en) * | 1988-08-19 | 1991-07-16 | Hitachi, Ltd. | Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method |
US4976392A (en) * | 1989-08-11 | 1990-12-11 | Orthodyne Electronics Corporation | Ultrasonic wire bonder wire formation and cutter system |
US5277356A (en) * | 1992-06-17 | 1994-01-11 | Rohm Co., Ltd. | Wire bonding method |
US20040124545A1 (en) * | 1996-12-09 | 2004-07-01 | Daniel Wang | High density integrated circuits and the method of packaging the same |
US6056185A (en) * | 1998-03-18 | 2000-05-02 | Ga-Tek Inc. | Method of connecting batteries to electronic circuits |
US6884393B2 (en) * | 2001-07-13 | 2005-04-26 | Ethicon, Inc. | Surface treatment of aluminum alloys to improve sterilization process compatibility |
US6641027B2 (en) | 2001-12-18 | 2003-11-04 | Ngk Spark Plug Co., Ltd. | Method of connecting electric leads to battery tabs |
KR100762873B1 (ko) * | 2003-06-10 | 2007-10-08 | 주식회사 하이닉스반도체 | 내부 전압 발생기 |
DE102013104933A1 (de) * | 2012-06-06 | 2013-12-12 | Hanning Elektro-Werke Gmbh & Co. Kg | Verfahren zur elektrischen Kontaktierung eines Aluminiumdrahts |
WO2017066609A1 (en) | 2015-10-14 | 2017-04-20 | NanoAL LLC | Aluminum-iron-zirconium alloys |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2754456A (en) * | 1956-07-10 | Madelung | ||
US2021477A (en) * | 1933-08-05 | 1935-11-19 | Aluminum Co Of America | Resistance welding |
NL274733A (ja) * | 1961-02-15 | |||
BE621898A (ja) * | 1961-08-30 | 1900-01-01 | ||
US3459355A (en) * | 1967-10-11 | 1969-08-05 | Gen Motors Corp | Ultrasonic welder for thin wires |
NL162580B (nl) * | 1970-12-17 | 1980-01-15 | Philips Nv | Werkwijze voor het ultrasoonlassen van draden op het metalen oppervlak van een drager. |
US3717842A (en) * | 1971-02-26 | 1973-02-20 | Perfection Electrical Prod Inc | Method of connecting aluminum wire to electrical terminals |
US3791028A (en) * | 1971-09-17 | 1974-02-12 | Ibm | Ultrasonic bonding of cubic crystal-structure metals |
US4056681A (en) * | 1975-08-04 | 1977-11-01 | International Telephone And Telegraph Corporation | Self-aligning package for integrated circuits |
DE2748239A1 (de) * | 1977-10-27 | 1979-05-03 | Siemens Ag | Verfahren zum kontaktieren eines elektrischen kaltleiter-widerstandes mit einem anschlusselement |
US4279666A (en) * | 1979-11-28 | 1981-07-21 | General Motors Corporation | Oxidized aluminum overcoat for solid electrolyte sensor |
US4373653A (en) * | 1981-09-10 | 1983-02-15 | Raytheon Company | Method and apparatus for ultrasonic bonding |
-
1982
- 1982-10-04 JP JP57173230A patent/JPS5963737A/ja active Pending
-
1983
- 1983-09-23 US US06/535,055 patent/US4580713A/en not_active Expired - Lifetime
- 1983-10-03 DE DE19833335848 patent/DE3335848A1/de active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62217507A (ja) * | 1986-02-06 | 1987-09-25 | アルカン・インタ−ナシヨナル・リミテツド | 絶縁アルミニウム線及びその製法 |
Also Published As
Publication number | Publication date |
---|---|
DE3335848C2 (ja) | 1992-06-25 |
DE3335848A1 (de) | 1984-04-05 |
US4580713A (en) | 1986-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5963737A (ja) | 布線の接続方法 | |
JPH0399456A (ja) | 半導体装置およびその製造方法 | |
JP2753696B2 (ja) | 半導体パッケージのテープ自動結合構造 | |
JP2781019B2 (ja) | 半導体装置およびその製造方法 | |
JPH0394430A (ja) | 半導体装置およびその製造方法 | |
JPH09246427A (ja) | 表面実装型半導体装置の製造方法および表面実装型半導体装置 | |
JPH08264581A (ja) | パッケージ及びその製造方法 | |
JPS6245138A (ja) | 電子部品装置の製法 | |
JPS60224237A (ja) | 半導体装置およびその製造方法 | |
JPH04212277A (ja) | プリント配線板への端子の接続法 | |
JPH1116939A (ja) | 半導体装置及びその製造方法 | |
JPS63136537A (ja) | 半導体用テ−プ状リ−ド | |
JP3141682B2 (ja) | 複合リードフレーム | |
JPH0469427B2 (ja) | ||
TW200305266A (en) | Semiconductor device and a method of manufacturing the same | |
JPS63310149A (ja) | 高集積化ic用パッケ−ジおよびその製造方法 | |
JPH0685127A (ja) | 金属箔積層フィルム | |
JP2846456B2 (ja) | チップキャリア | |
JPH1084177A (ja) | 回路基板およびその製造方法 | |
JPH11232929A (ja) | 異方性導電樹脂およびこの異方性導電樹脂を有する半導体装置 | |
JPH04275443A (ja) | 半導体集積回路装置 | |
JPH0496240A (ja) | 半導体集積回路装置およびその実装方法 | |
JPS6349454A (ja) | サ−マルヘツド | |
JPH06314707A (ja) | 混成集積回路 | |
JPS6240734A (ja) | 半導体装置 |