JPS5963737A - 布線の接続方法 - Google Patents

布線の接続方法

Info

Publication number
JPS5963737A
JPS5963737A JP57173230A JP17323082A JPS5963737A JP S5963737 A JPS5963737 A JP S5963737A JP 57173230 A JP57173230 A JP 57173230A JP 17323082 A JP17323082 A JP 17323082A JP S5963737 A JPS5963737 A JP S5963737A
Authority
JP
Japan
Prior art keywords
wire
diameter
bonding
pad
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57173230A
Other languages
English (en)
Inventor
Masao Sekihashi
関端　正雄
Kanji Otsuka
寛治 大塚
Yoshiyuki Osawa
大沢　義幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57173230A priority Critical patent/JPS5963737A/ja
Priority to US06/535,055 priority patent/US4580713A/en
Priority to DE19833335848 priority patent/DE3335848A1/de
Publication of JPS5963737A publication Critical patent/JPS5963737A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0207—Ultrasonic-, H.F.-, cold- or impact welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
    • H01R4/62—Connections between conductors of different materials; Connections between or with aluminium or steel-core aluminium conductors
    • H01R4/625—Soldered or welded connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/553—Materials of bond wires not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/953—Materials of bond pads not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は布線を電子回路のパッドに接続する方法に関す
る。特に多数の布線をハイブリッドモジュールなどの微
少エリアに接続するのに好適外布線の接線方法に関する
。
〔従来技術〕
従来の布線の接続方法はＣｏ芯線に、Ａｕメッキを１施
し、芯線の表面に絶縁被膜としテフロン、ポリウレタン
などの樹脂をコートした線を使用し、接続はこの被膜を
超音波で除去した后熱圧着で接続する方法が一般的方法
である。しかしながらこの方法では被覆線が太くなるこ
とにより接続エリアが大きくなること、被覆除去后熱圧
着と２ステツプの作業になシエ数が大きいこと、被覆の
完全除去が＃Ｌ＜接続信頼性が悪いなどの欠点があった
。
〔発明の目的〕
本発明の目的は従来の布線ボンデングエリアより小さな
エリアにボンデング出来且つボンデング作業が簡単で信
頼性も高い布線の接続方法を提供することにある。
〔発明の概要〕
布線のボンデング（接続）エリアを小さくするにはワイ
ヤ径を小さくする必要がある、この目的には被覆厚を小
さくすることが良い。又ボンデング方法に於て作業性で
は被覆除去とボンデングが同時に出来ることが良い。又
信頼度上問題なのは被覆残りがボンデング部にないこと
が良い。これらの要求に応えるべく、本発明はアルマイ
ト処理したアルミ線を超音波ワイヤボンデングで接続す
ることを特徴とする。
〔発明の実施例〕
以下本発明の一実施例を第１図〜第４図により説明する
。第１図は本発明を適用しているハイブリットモジー−
ルの平面図である、第２図は第１図の側面図である。ア
ルミナセラミックの多層配線基板２に半導体ペレット４
を２個塔載し、ペレットの周凹に補修パッド３が配置さ
れている、パッドの表面にはＡｕメッキが１〜２μｍ厚
施されており、このパッドの一部に補修布線１がボンデ
ングされている。パッドには１本〜２本のボンデングが
必要である。又１′も補修布線であるが、補修布線１と
接触し交叉している。
このようなハイブリッドモジュールに於ける補修布線を
実現するためには、従来の補修布線は第６図に示すごと
く芯線７がテフロン、ウレタンなどの樹脂による被覆６
を使用していた。このため第３図で示す接続部の形状（
Ｂ）が大きくなシ、パッド３のサイズを大きくする必要
かあった。そこで補修布線にアルマイト処理したア。
ルミ線を使用する。第４図に本発明の場合を示ψ す芯線７が５０μｍではアルマイト厚０．１μｍ〜１μ
ｍマ充分な絶縁性（１ｘ１０８Ω以上）が得られること
ψ から線の外径は５１μｍで済む。従来は被覆厚が５〜１
０μｍとなり、外径は６０〜７０μ累となる。一方接続
は通常の超音波ワイヤボンデングで接続が可能であシ、
この時の線のつぶれ巾は線径の１．５−２倍で接続でき
る。従ってこの時点での線径は第４図ＣＢ５で示すよう
に（５１Ｘ２＝　）　１［１２μｍ巾となる。
従来方法では被覆がつぶれて６〜４倍に広がるだめ、第
６図（Ｂ）で示すように（，７０Ｘ４→２８０μｍの巾
となる。即ち本発明では従来のボンデングエリアの火、
以下にすることが可能となる。一方ボンデング方法は極
めて一般的な超音波ワイヤボンデ、７法ア可能アあ１．
５１％ｎ０７７、フィト処理した線では特に大きな条件
変更は必要としない。このため従来の補修布線ボンデン
グのように被覆を除去するため超音波を与え基板との摩
擦で線の一部の被覆を除去し、その后４００〜５０σＣ
加熱したテップで２００〜５００２の加重で加圧接着す
るような複雑な作業は不要である。耐熱性についても、
本発明によるアルミ線では５ｏｏｃまでは充分に接続信
頼性を保つことから、補修后半田付、その他の加熱を鼻
施する場合でも充分信頼性を保つことが可能である０ 〔発明の効果〕 以上のようにアルマイト処理したアルミ線を使用し超音
波ワイヤボンデングを行うことで径゛か５１μｍｌ線を
使用すればノクット径が０．４程度あれば２本の線が充
分ボンデング出来、その后の耐熱性も良いことから、半
田付その他のカロ熱作業にも而＝１える。尚補修布線層
気密封止すれば腐食断線もなく長寿命が得←れる。無論
近年アル。
ミ線ボンデング品を超クリーン化し、ノ・ロゲンイオン
（Ｆ、　ｔ、　　Ｂ；等）及びその他のアルミ線を腐食
させる物質を除去してレジン封止だけで信。
粗性を得る方式が採用されているが、この方式（レジン
封止）でも可能である。
【図面の簡単な説明】
第１図及び第２図はそれぞれ本発明を適用したモジュー
ルを示す平面図及び側面図、第３図は従来のボンデング
ノくットの拡大図、第４図は本発明の場合のボンデング
ノ（ット拡大図を示す６１．１′・・・補修布線、 ２、・・・セラミック多層配線基板、 ６、・・・パッド、 ４、・・・ペレット、 ５・・・リード、 ６・・・被覆、 ７・・・芯線、 代理人弁理士　薄　１）利　ａｈ

Claims (1)

    【特許請求の範囲】
  1. 布線を電子回路のパッドに接続する方法において、アル
    マイト処理したアルミ線を超音波ワイヤボンデングで接
    続することを特徴とする布・線の接続方法。
JP57173230A 1982-10-04 1982-10-04 布線の接続方法 Pending JPS5963737A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57173230A JPS5963737A (ja) 1982-10-04 1982-10-04 布線の接続方法
US06/535,055 US4580713A (en) 1982-10-04 1983-09-23 Method for bonding an aluminum wire
DE19833335848 DE3335848A1 (de) 1982-10-04 1983-10-03 Verfahren zum verbinden eines aluminiumdrahtes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57173230A JPS5963737A (ja) 1982-10-04 1982-10-04 布線の接続方法

Publications (1)

Publication Number Publication Date
JPS5963737A true JPS5963737A (ja) 1984-04-11

Family

ID=15956553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57173230A Pending JPS5963737A (ja) 1982-10-04 1982-10-04 布線の接続方法

Country Status (3)

Country Link
US (1) US4580713A (ja)
JP (1) JPS5963737A (ja)
DE (1) DE3335848A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217507A (ja) * 1986-02-06 1987-09-25 アルカン・インタ−ナシヨナル・リミテツド 絶縁アルミニウム線及びその製法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3537551A1 (de) * 1985-10-22 1987-04-23 Delvotec S A Bondkapillare sowie verfahren zum bonden unter verwendung einer derartigen bondkapillare
US4860941A (en) * 1986-03-26 1989-08-29 Alcan International Limited Ball bonding of aluminum bonding wire
EP0276928B1 (en) * 1987-01-26 1994-10-26 Hitachi, Ltd. Wire Bonding
US5152450A (en) * 1987-01-26 1992-10-06 Hitachi, Ltd. Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method
US5285949A (en) * 1987-01-26 1994-02-15 Hitachi, Ltd. Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method
US4771260A (en) * 1987-03-24 1988-09-13 Cooper Industries, Inc. Wire bonded microfuse and method of making
US4928384A (en) * 1987-03-24 1990-05-29 Cooper Industries, Inc. Method of making a wire bonded microfuse
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US4976392A (en) * 1989-08-11 1990-12-11 Orthodyne Electronics Corporation Ultrasonic wire bonder wire formation and cutter system
US5277356A (en) * 1992-06-17 1994-01-11 Rohm Co., Ltd. Wire bonding method
US20040124545A1 (en) * 1996-12-09 2004-07-01 Daniel Wang High density integrated circuits and the method of packaging the same
US6056185A (en) * 1998-03-18 2000-05-02 Ga-Tek Inc. Method of connecting batteries to electronic circuits
US6884393B2 (en) * 2001-07-13 2005-04-26 Ethicon, Inc. Surface treatment of aluminum alloys to improve sterilization process compatibility
US6641027B2 (en) 2001-12-18 2003-11-04 Ngk Spark Plug Co., Ltd. Method of connecting electric leads to battery tabs
KR100762873B1 (ko) * 2003-06-10 2007-10-08 주식회사 하이닉스반도체 내부 전압 발생기
DE102013104933A1 (de) * 2012-06-06 2013-12-12 Hanning Elektro-Werke Gmbh & Co. Kg Verfahren zur elektrischen Kontaktierung eines Aluminiumdrahts
BR112018006233A2 (pt) 2015-10-14 2018-10-09 General Cable Technologies Corporation cabos e fios com elementos condutivos formados de ligas de alumínio-zircônio melhoradas

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754456A (en) * 1956-07-10 Madelung
US2021477A (en) * 1933-08-05 1935-11-19 Aluminum Co Of America Resistance welding
NL274733A (ja) * 1961-02-15
NL282318A (ja) * 1961-08-30 1900-01-01
US3459355A (en) * 1967-10-11 1969-08-05 Gen Motors Corp Ultrasonic welder for thin wires
NL162580B (nl) * 1970-12-17 1980-01-15 Philips Nv Werkwijze voor het ultrasoonlassen van draden op het metalen oppervlak van een drager.
US3717842A (en) * 1971-02-26 1973-02-20 Perfection Electrical Prod Inc Method of connecting aluminum wire to electrical terminals
US3791028A (en) * 1971-09-17 1974-02-12 Ibm Ultrasonic bonding of cubic crystal-structure metals
US4056681A (en) * 1975-08-04 1977-11-01 International Telephone And Telegraph Corporation Self-aligning package for integrated circuits
DE2748239A1 (de) * 1977-10-27 1979-05-03 Siemens Ag Verfahren zum kontaktieren eines elektrischen kaltleiter-widerstandes mit einem anschlusselement
US4279666A (en) * 1979-11-28 1981-07-21 General Motors Corporation Oxidized aluminum overcoat for solid electrolyte sensor
US4373653A (en) * 1981-09-10 1983-02-15 Raytheon Company Method and apparatus for ultrasonic bonding

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217507A (ja) * 1986-02-06 1987-09-25 アルカン・インタ−ナシヨナル・リミテツド 絶縁アルミニウム線及びその製法

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DE3335848A1 (de) 1984-04-05
US4580713A (en) 1986-04-08

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