JPS5961138A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5961138A
JPS5961138A JP57171254A JP17125482A JPS5961138A JP S5961138 A JPS5961138 A JP S5961138A JP 57171254 A JP57171254 A JP 57171254A JP 17125482 A JP17125482 A JP 17125482A JP S5961138 A JPS5961138 A JP S5961138A
Authority
JP
Japan
Prior art keywords
laser
irradiation
power
low power
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57171254A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586651B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
伸夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57171254A priority Critical patent/JPS5961138A/ja
Publication of JPS5961138A publication Critical patent/JPS5961138A/ja
Publication of JPH0586651B2 publication Critical patent/JPH0586651B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP57171254A 1982-09-30 1982-09-30 半導体装置の製造方法 Granted JPS5961138A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57171254A JPS5961138A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57171254A JPS5961138A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5961138A true JPS5961138A (ja) 1984-04-07
JPH0586651B2 JPH0586651B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=15919908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57171254A Granted JPS5961138A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5961138A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
US5210766A (en) * 1990-12-27 1993-05-11 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
US5882127A (en) * 1995-03-16 1999-03-16 Rohm Co. Ltd. Card printer and method of printing on cards using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758363A (en) * 1980-09-26 1982-04-08 Oki Electric Ind Co Ltd Manufacture of mos type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758363A (en) * 1980-09-26 1982-04-08 Oki Electric Ind Co Ltd Manufacture of mos type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
US5210766A (en) * 1990-12-27 1993-05-11 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
US5882127A (en) * 1995-03-16 1999-03-16 Rohm Co. Ltd. Card printer and method of printing on cards using the same

Also Published As

Publication number Publication date
JPH0586651B2 (enrdf_load_stackoverflow) 1993-12-13

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