JPS5958845A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5958845A JPS5958845A JP57169258A JP16925882A JPS5958845A JP S5958845 A JPS5958845 A JP S5958845A JP 57169258 A JP57169258 A JP 57169258A JP 16925882 A JP16925882 A JP 16925882A JP S5958845 A JPS5958845 A JP S5958845A
- Authority
- JP
- Japan
- Prior art keywords
- stem
- cap
- circumferential surface
- glass
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000003466 welding Methods 0.000 claims abstract description 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 241000283707 Capra Species 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000015278 beef Nutrition 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- -1 etc. Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
この発明は金属ステムと金属キャップを抵抗溶接してな
るカンケース内に半導体素子を封止した半導体装置の製
造方法に関し、特に前記ステムとキャップの溶接方法に
関する。TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element is sealed in a can case formed by resistance welding a metal stem and a metal cap, and more particularly to a method for welding the stem and the cap.
背景技術
パワートランジスタ等の半導体装置には、樹脂封止型の
ものと、カンケース型のものとがある。BACKGROUND ART Semiconductor devices such as power transistors are classified into resin-sealed type and can case type.
後者のカンケース型のものはｈＵ者に比較して高信頼性
を有し、各種の構造のもの−がある。例えば電力が数ワ
ット以下の場合は、一般に第１図および第２図に示す構
造を有する。第１図はキャップを高さ方向の途中から切
断した平面図であり、第２図は第１図の■−■線に沿う
１１９１面図である。図において、ｌはステムで、キャ
ップ２と抵抗溶接されてカンケースを構成している。前
記ステムｌは、鉄またはコバールよりなる円形のステム
本体３の下端周縁にキャップ溶接用のフランジ４全有し
、周縁近傍に２個の透孔５，５を有する。前記各透孔５
，５内にはソーダガラス、ホウケイ酸ガラス等よりなる
カラス６．６を介して、鉄・ニッケル合金’Ａ 捷たは
フバール製のリード線７，７気密にしかもステ八本体３
と電気的に絶縁して封着されている。８はステム本体３
の上面に半田等によって固ｋ ｇれなトランジスタ等の
半導体素子、９゜９は半導体素子８の上面電極とリード
線７，７とを結ぶアルミニウム、金等よりなる金属細線
である。The latter can case type has higher reliability than the hU type, and there are various types of structures. For example, when the power is several watts or less, the structure generally shown in FIGS. 1 and 2 is used. FIG. 1 is a plan view of the cap cut from the middle in the height direction, and FIG. 2 is a 1191-plane view taken along the line ■-■ in FIG. In the figure, l is a stem, which is resistance welded to the cap 2 to form a can case. The stem 1 has a flange 4 for cap welding on the lower end periphery of a circular stem body 3 made of iron or Kovar, and has two through holes 5 near the periphery. Each of the through holes 5
, 5, through a glass 6.6 made of soda glass, borosilicate glass, etc., lead wires 7, 7 made of iron-nickel alloy 'A' or Fvar are connected in an airtight manner, and the main body 3 of the stator 8
electrically insulated and sealed. 8 is the stem body 3
A semiconductor element such as a transistor is fixed to the upper surface by solder or the like, and 9.9 is a thin metal wire made of aluminum, gold, etc. that connects the upper electrode of the semiconductor element 8 and the lead wires 7, 7.
上記ステム１のステム本体３のフランジ部４を除く直径
寸法は、例えば７．６ ｍ−程度であり、ステム本体３
の周面とリード線７，７を封着している透孔５，５との
間隔寸法は、１ｍ以下の非常に小さいものとなっている
。このため、ステム１とキャップ２とを抵抗溶接する際
に、牛ヤツブ２の内壁とステム１で分流を起すと、ガラ
ス６．６にクランクが入り、気密劣化が生じる。このよ
うな問題を解決する一つの手段として、キャップ２の７
ランジ１０の下面にプロジェクションを設けて、溶接条
件を低くすることが考えられているが、完全にカラスク
ラックをなくすことができなかった。The diameter of the stem body 3 of the stem 1 excluding the flange portion 4 is, for example, about 7.6 m.
The distance between the circumferential surface and the through holes 5, 5 sealing the lead wires 7, 7 is very small, 1 m or less. Therefore, when the stem 1 and the cap 2 are resistance welded, if the flow is divided between the inner wall of the beef goat 2 and the stem 1, the glass 6.6 will be cranked and the airtightness will deteriorate. As one means to solve such problems, 7 of cap 2
Although it has been considered to lower the welding conditions by providing a projection on the lower surface of the lunge 10, it has not been possible to completely eliminate crow cracks.
また、溶接電極の精度にも限度があり、解決策が見い出
せなかった。Additionally, there were limits to the accuracy of the welding electrode, and no solution could be found.
発明の開示
それゆえ、この発明は上記のステムとキャップの抵抗溶
接時にカラスクラックを生じない製造方法、特に溶接方
法を提供することを目的とする。DISCLOSURE OF THE INVENTION Therefore, it is an object of the present invention to provide a manufacturing method, particularly a welding method, that does not cause crow cracks during resistance welding of the stem and cap.
この発明はステムのリード線を封着した側の周面とキャ
ップ内面との間に微小間隙を設けた状態で、ステムとキ
ャップとを抵抗溶接することを特徴とするものである。This invention is characterized in that the stem and the cap are resistance welded with a minute gap provided between the circumferential surface of the stem on the side where the lead wires are sealed and the inner surface of the cap.
すなわち、抵抗溶接時にガラスクラックが発生する原因
は、キャップの内面がステムのガラス封着部の周面を押
圧することによって生ずるものであり、ステムのリード
線到着側の周面とキャップの内面との間に微小間隙を設
けた状態で両者を抵抗溶接することにより、キャップ内
面によるステム周面の押圧を防止し、もってガラスに応
力を学えないようにして、ガラスクランクを防止すると
いう作用効果を奏するものである。In other words, glass cracks occur during resistance welding because the inner surface of the cap presses against the circumferential surface of the glass sealing part of the stem, and the inner surface of the cap and the circumferential surface of the stem on the lead wire arrival side are By resistance welding the two with a small gap between them, the inner surface of the cap prevents the circumferential surface of the stem from being pressed, which prevents stress from being applied to the glass and prevents glass cranking. It is something that plays.
以下、この発明の実施例を図面を参照して説明する。第
３図はこの発明により製造した半導体装置のキャップを
高ざ方向の中途から切断Ｌｅｔ平面図を示す。図におい
て、次の点を除いては第１図および第２図と同様であり
、同一部分または対応部分には同−姦１ｉ（４Ｑｄυを
（ｔ してその説明を省略する。第１図および第２図に
示す半導体装置との相違点は、ステム本体３の形状にあ
る。すなわち、第３図の半導体装置のステム本体３は、
ガラス封着部と反対側の周面の中心点がＯにあるのに対
し、ガラス封着部側の周面の中心点は、前記中心点Ｏよ
りもガラス封着部と反対側に寸法ａたけずれたＯ′にあ
ることであり、正円形状に形成されていないことである
。Ｌ７Ｔｈがって、ステム本体３にキャップ２を被せた
とき、ステム本体３のガラス封着部側の周面とキャップ
２の内面との間に微小間隙Ａ（＝：ａ）が形成される。Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 shows a plan view of the cap of the semiconductor device manufactured according to the present invention, cut from halfway in the height direction. The figure is the same as FIGS. 1 and 2 except for the following points, and the same or corresponding parts are shown as (t) and their explanation will be omitted. The difference from the semiconductor device shown in FIG. 2 lies in the shape of the stem body 3. That is, the stem body 3 of the semiconductor device shown in FIG.
The center point of the circumferential surface on the side opposite to the glass sealing section is at O, whereas the center point of the circumferential surface on the side of the glass sealing section is located at a dimension a on the side opposite to the glass sealing section from the center point O. The reason is that it is at an offset O', and that it is not formed in a perfect circular shape. L7Th, when the cap 2 is placed on the stem body 3, a minute gap A (=:a) is formed between the circumferential surface of the stem body 3 on the side of the glass sealing part and the inner surface of the cap 2.
このように、ステム本体３の周面とキャップ２の内面と
の間に微小間隙を設けた状態でステム１とキャップ２と
を抵抗溶接すると、溶接時にキャップ２やステム本体３
に分流が生じても、キャップ２の内面がステム本体３の
周面を強く押圧することが防止され、ガラスに無理な力
が加わらなくなるため、ガラスクラックの発生が防止で
きる。In this way, when the stem 1 and the cap 2 are resistance welded with a small gap provided between the circumferential surface of the stem body 3 and the inner surface of the cap 2, the cap 2 and the stem body 3 are
Even if a shunt occurs, the inner surface of the cap 2 is prevented from strongly pressing the circumferential surface of the stem body 3, and as no unreasonable force is applied to the glass, the occurrence of glass cracks can be prevented.
第１図および第２図はこの発明の背景となる半導体装置
を示し、第１図はキャップを旨さ方向の中途より切断し
た平面図で、第２図は第１図の」−Ｕ線に沿う断面図で
ある。第３図はこの発明の製造方法によって製造された
半導体装置のキャップを高さ方向の中途より切断した平
面図である。
ｌ・・・・・ステム、
２・・・・・・キャップ、
３・・・・ ステム本体、
６・・・・ ガラス、
７・・・・リード系中。
、ｍ−７，、−。
特許出願人 新日本電気株式会社 、′１．パ。
３・、。
−−ＫＬ′
第１図
第２図
第３図
］1 and 2 show a semiconductor device which is the background of the present invention, FIG. 1 is a plan view of the cap cut from the middle in the direction of the taste, and FIG. 2 is taken along the -U line of FIG. FIG. FIG. 3 is a plan view of the cap of the semiconductor device manufactured by the manufacturing method of the present invention, cut from the middle in the height direction. l... Stem, 2... Cap, 3... Stem body, 6... Glass, 7... Lead system inside. , m-7,, -. Patent applicant: Nippon Electric Co., Ltd., '1. Pa. 3.. --KL' Figure 1, Figure 2, Figure 3]
Claims (1)
気密絶縁的に封着した円形のステムに円形のキャップを
抵抗溶接して固着封止する半導体装置の製造方法におい
て、 前記ステムのリード線を封着した側の周面とキャップ内
面との間に微小間隙を設けた状態で、ステムとキャップ
を抵抗溶接することを特徴とする半導体装置の製造方法
。 ２ 前記ステムのリード線を封着した側の周面の中心点
か゛、それと反対側の周面の中心点よりも偏心している
、特許請求の範囲第１項記載の半導体装置の製造方法。[Claims] 1. Manufacture of a semiconductor device in which a circular cap is fixedly sealed by resistance welding to a circular stem in which a lead wire is hermetically and insulatively sealed through a glass in a through hole near the periphery. A method for manufacturing a semiconductor device, comprising: resistance welding the stem and the cap with a minute gap provided between the peripheral surface of the stem on the side where the lead wires are sealed and the inner surface of the cap. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the center point of the circumferential surface of the stem on the side to which the lead wire is sealed is more eccentric than the center point of the circumferential surface of the opposite side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57169258A JPS5958845A (en) | 1982-09-28 | 1982-09-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57169258A JPS5958845A (en) | 1982-09-28 | 1982-09-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5958845A true JPS5958845A (en) | 1984-04-04 |
Family
ID=15883168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57169258A Pending JPS5958845A (en) | 1982-09-28 | 1982-09-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5958845A (en) |
-
1982
- 1982-09-28 JP JP57169258A patent/JPS5958845A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003133497A (en) | Thin semiconductor device | |
| JPS5958845A (en) | Manufacture of semiconductor device | |
| US3931635A (en) | Semiconductor device with a control electrode in pressure contact with the semiconductor disc | |
| US3553828A (en) | Lead assembly structure for semiconductor devices | |
| JP2003179193A (en) | Lead frame and manufacturing method thereof, resin- sealed semiconductor device and manufacturing and inspection methods thereof | |
| JPH01257361A (en) | Resin-sealed semiconductor device | |
| JPS6138193Y2 (en) | ||
| JPS5932156A (en) | Cap mounting structure for semiconductor device | |
| JPH0358450A (en) | Ceramic package of semiconductor device | |
| JP2710515B2 (en) | Lead frame for resin-sealed semiconductor device | |
| JPH01124227A (en) | Semiconductor device | |
| JPH03129840A (en) | Resin-sealed semiconductor device | |
| JPS63226948A (en) | Hybrid integrated device | |
| JPS6011644Y2 (en) | semiconductor equipment | |
| JPH0498861A (en) | Resin sealed type semiconductor device | |
| JP2582534B2 (en) | Method for manufacturing semiconductor device | |
| JP2723855B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
| JPH04321255A (en) | Airtightly sealing method for semiconductor enclosure | |
| JP2001035988A (en) | Semiconductor device | |
| JPH02109410A (en) | Resin seal type semiconductor device | |
| JPH06260528A (en) | Semiconductor integrated circuit device | |
| JPH031538U (en) | ||
| JPH02303056A (en) | Manufacture of semiconductor integrated circuit | |
| JPH0766231A (en) | Manufacture of face mounting-type semiconductor device | |
| JPS6056303B2 (en) | Manufacturing method of semiconductor device |