JPS5958842A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5958842A JPS5958842A JP57171412A JP17141282A JPS5958842A JP S5958842 A JPS5958842 A JP S5958842A JP 57171412 A JP57171412 A JP 57171412A JP 17141282 A JP17141282 A JP 17141282A JP S5958842 A JPS5958842 A JP S5958842A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- region
- base
- electrode extraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000000605 extraction Methods 0.000 claims description 20
- 239000002131 composite material Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000005360 phosphosilicate glass Substances 0.000 claims 1
- 238000004321 preservation Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171412A JPS5958842A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171412A JPS5958842A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5958842A true JPS5958842A (ja) | 1984-04-04 |
| JPS645472B2 JPS645472B2 (en, 2012) | 1989-01-30 |
Family
ID=15922655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57171412A Granted JPS5958842A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5958842A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041259A (ja) * | 1983-08-17 | 1985-03-04 | Nec Corp | 半導体装置 |
-
1982
- 1982-09-28 JP JP57171412A patent/JPS5958842A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041259A (ja) * | 1983-08-17 | 1985-03-04 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS645472B2 (en, 2012) | 1989-01-30 |
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