JPS5955441A - 水素化アモルフアスシリコン膜の形成方法 - Google Patents
水素化アモルフアスシリコン膜の形成方法Info
- Publication number
- JPS5955441A JPS5955441A JP57164990A JP16499082A JPS5955441A JP S5955441 A JPS5955441 A JP S5955441A JP 57164990 A JP57164990 A JP 57164990A JP 16499082 A JP16499082 A JP 16499082A JP S5955441 A JPS5955441 A JP S5955441A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- pressure
- decomposition
- hydrogenated amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164990A JPS5955441A (ja) | 1982-09-24 | 1982-09-24 | 水素化アモルフアスシリコン膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164990A JPS5955441A (ja) | 1982-09-24 | 1982-09-24 | 水素化アモルフアスシリコン膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5955441A true JPS5955441A (ja) | 1984-03-30 |
| JPH0462073B2 JPH0462073B2 (cs) | 1992-10-05 |
Family
ID=15803739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57164990A Granted JPS5955441A (ja) | 1982-09-24 | 1982-09-24 | 水素化アモルフアスシリコン膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5955441A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS633463A (ja) * | 1986-06-24 | 1988-01-08 | Agency Of Ind Science & Technol | 薄膜トランジスタの製造方法 |
| US5951774A (en) * | 1995-01-27 | 1999-09-14 | Nec Corporation | Cold-wall operated vapor-phase growth system |
-
1982
- 1982-09-24 JP JP57164990A patent/JPS5955441A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS633463A (ja) * | 1986-06-24 | 1988-01-08 | Agency Of Ind Science & Technol | 薄膜トランジスタの製造方法 |
| US5951774A (en) * | 1995-01-27 | 1999-09-14 | Nec Corporation | Cold-wall operated vapor-phase growth system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0462073B2 (cs) | 1992-10-05 |
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