JPS5955064A - ホ−ル素子 - Google Patents
ホ−ル素子Info
- Publication number
- JPS5955064A JPS5955064A JP57165557A JP16555782A JPS5955064A JP S5955064 A JPS5955064 A JP S5955064A JP 57165557 A JP57165557 A JP 57165557A JP 16555782 A JP16555782 A JP 16555782A JP S5955064 A JPS5955064 A JP S5955064A
- Authority
- JP
- Japan
- Prior art keywords
- hall
- hall voltage
- transistors
- current
- point contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165557A JPS5955064A (ja) | 1982-09-22 | 1982-09-22 | ホ−ル素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165557A JPS5955064A (ja) | 1982-09-22 | 1982-09-22 | ホ−ル素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5955064A true JPS5955064A (ja) | 1984-03-29 |
| JPH0232795B2 JPH0232795B2 (enrdf_load_stackoverflow) | 1990-07-23 |
Family
ID=15814620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57165557A Granted JPS5955064A (ja) | 1982-09-22 | 1982-09-22 | ホ−ル素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5955064A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8035932B2 (en) | 2007-09-20 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | Lorentz magnetoresistive sensor with integrated signal amplification |
| US9425325B2 (en) | 2008-09-17 | 2016-08-23 | Cypress Semiconductor Corporation | Electrically programmable and eraseable memory device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562691A (en) * | 1979-06-21 | 1981-01-12 | Rohm Co Ltd | Hall-effect device |
-
1982
- 1982-09-22 JP JP57165557A patent/JPS5955064A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562691A (en) * | 1979-06-21 | 1981-01-12 | Rohm Co Ltd | Hall-effect device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8035932B2 (en) | 2007-09-20 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | Lorentz magnetoresistive sensor with integrated signal amplification |
| US9425325B2 (en) | 2008-09-17 | 2016-08-23 | Cypress Semiconductor Corporation | Electrically programmable and eraseable memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0232795B2 (enrdf_load_stackoverflow) | 1990-07-23 |
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