JPS5954694A - 単結晶成長方法 - Google Patents

単結晶成長方法

Info

Publication number
JPS5954694A
JPS5954694A JP16611082A JP16611082A JPS5954694A JP S5954694 A JPS5954694 A JP S5954694A JP 16611082 A JP16611082 A JP 16611082A JP 16611082 A JP16611082 A JP 16611082A JP S5954694 A JPS5954694 A JP S5954694A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
growth
pulling
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16611082A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0420875B2 (enExample
Inventor
Ritsuo Takizawa
滝沢　律夫
Koichiro Honda
耕一郎 本田
Shigeru Okamura
茂 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16611082A priority Critical patent/JPS5954694A/ja
Publication of JPS5954694A publication Critical patent/JPS5954694A/ja
Publication of JPH0420875B2 publication Critical patent/JPH0420875B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP16611082A 1982-09-24 1982-09-24 単結晶成長方法 Granted JPS5954694A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16611082A JPS5954694A (ja) 1982-09-24 1982-09-24 単結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16611082A JPS5954694A (ja) 1982-09-24 1982-09-24 単結晶成長方法

Publications (2)

Publication Number Publication Date
JPS5954694A true JPS5954694A (ja) 1984-03-29
JPH0420875B2 JPH0420875B2 (enExample) 1992-04-07

Family

ID=15825202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16611082A Granted JPS5954694A (ja) 1982-09-24 1982-09-24 単結晶成長方法

Country Status (1)

Country Link
JP (1) JPS5954694A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043949A (enExample) * 1973-07-16 1975-04-21
JPS5560096A (en) * 1978-10-26 1980-05-06 Ricoh Co Ltd Crystal diameter controlling method with laser beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043949A (enExample) * 1973-07-16 1975-04-21
JPS5560096A (en) * 1978-10-26 1980-05-06 Ricoh Co Ltd Crystal diameter controlling method with laser beam

Also Published As

Publication number Publication date
JPH0420875B2 (enExample) 1992-04-07

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