JPS5954248A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5954248A JPS5954248A JP16543182A JP16543182A JPS5954248A JP S5954248 A JPS5954248 A JP S5954248A JP 16543182 A JP16543182 A JP 16543182A JP 16543182 A JP16543182 A JP 16543182A JP S5954248 A JPS5954248 A JP S5954248A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- chip
- package
- multilayer ceramic
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は、多層セラミソクパソゲーシを用いた半導体装
置に関し、S積回路に電源、グランド間のバイパスコン
デンザを内蔵しようとするものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a semiconductor device using a multi-layered ceramic circuit, and is intended to incorporate a bypass capacitor between a power supply and a ground in an S product circuit.
技術の背景
半導体集積回路(IC)の111速化、高集積化に伴な
い、電源、グランド間に接続される雑音防II・1、誤
動作抑止用バイパス′:Jンデンジ・の重要性が益々高
ま−りでいる。従来のハ・イパス′二Jンデンリ′はI
cパッケージを実装するプリント基板トの電源ラインと
グランドライン間に接続されるのが一般的である。これ
は外界のノイズが電源う・インにのってIC内に入り、
ICが誤動作することを防1トすることを主眼において
いるためである。ところか、ICが高速上一つ高集積化
されるるこりれてICの−゛ll−ジンり、またIcと
該コンデンサ゛との間の電源ラインに分布するインダク
タンスが無視(きなくなり、これによりIC自体の電流
パルスが該コンデンサで充分に吸収されることなく電圧
)・イ又となってIC自月か誤動作する1((象かfi
f「R5?:!されている。Background of the Technology As semiconductor integrated circuits (ICs) become faster and more highly integrated, the importance of noise protection II.1 connected between the power supply and ground, and bypass for preventing malfunctions, is increasing. I'm in the middle of the day. The conventional Ha Ipas '2 J Ndenri' is I
It is generally connected between the power line and ground line of the printed circuit board on which the C package is mounted. This is because noise from the outside world gets on the power supply input and enters the IC.
This is because the main focus is to prevent the IC from malfunctioning. However, as ICs become more highly integrated in order to achieve higher speeds, the inductance of the IC and the inductance distributed in the power supply line between the IC and the capacitor are ignored. The current pulse of the IC itself is not sufficiently absorbed by the capacitor and turns into a voltage), causing the IC to malfunction.
f “R5?:!It has been done.
発明のl」的
本発明は、」二記のバイパスコンデンリ“をI Cパッ
ケージ−1に搭載して内外のタイプを91.原曲に吸収
しようとするものである。The present invention is intended to incorporate the two bypass condensers into the IC package-1 to absorb the internal and external types into the 91. original music.
発明の構成
本発明の半導体装置は、平導体簗積回路デツプを収容す
る多層セラミックパッケージの一部に、それぞれ内層配
線によって電源ビンとグランI・ピンに接続されるニノ
ンデンサ搭載バソ1を設り、該バットにチップコンデン
ジ・の電極を接続してなることを特徴とするが、以下図
示の実施例を参照しなからこれを詳細に説明する。Structure of the Invention The semiconductor device of the present invention is provided with a Ninon capacitor-mounted basso 1 connected to a power supply bin and a ground I pin through inner layer wiring, respectively, in a part of a multilayer ceramic package that accommodates a flat conductor layered circuit depth. The device is characterized in that an electrode of a chip capacitor is connected to the bat, which will be described in detail below without reference to the illustrated embodiment.
発明の実施例
第1図は本発明の一実施例を示す説明図で、(alは全
体の斜視図、(1))は一部断面とした側面図である。Embodiment of the Invention FIG. 1 is an explanatory diagram showing an embodiment of the present invention, in which (al) is an overall perspective view, and (1) is a partially sectional side view.
図においてIはデュアルインラインタイプのICの多層
セラミックパッケージ、2はその中央の四部に搭載され
たj Cチップ、3ば該凹fHH開1−1を封止するキ
ャップ、4はピン(錨1了)、5υ31ハ・イバス゛二
7ンう一ンサとして用いられる多IF −12:、yミ
ック型のチソプコンデン〜す′で/にノる。l □チッ
プ2はバ。In the figure, I is a dual in-line type IC multilayer ceramic package, 2 is a jC chip mounted in the four central parts, 3 is a cap that seals the recessed fHH opening 1-1, and 4 is a pin (anchor 1). ), 5υ31 is a multi-IF-12, which is used as another sensor for the 5υ31 bus. l □Chip 2 is Ba.
ケージ中央にΔu /’ 、’+ iの共晶(j゛(チ
ップイ′、j(]され、更に△IJまたはΔpの線7て
チップ周辺の段部に配設された端部バラ1部にソ・i’
−1−ボンディングされる。またキャップ3の封IL部
8(にε、1△U/3 nまたはP b / S nを
使用し、或いはンームウエルト法によって溶接する。端
子ビン4υコバノケーシ1の両側面に取(=Jジノられ
そし−(バソゲージ内を通る各層の配線およびヒアホー
ルを通して−1−記端子パッド邪に、ひいCはICチッ
プ2の各配線に接続される。The eutectic (j゛(chip i', j()) of Δu/','+i is placed in the center of the cage, and the line 7 of ΔIJ or Δp is connected to one part of the end rose disposed at the step around the chip. Soi'
-1- Bonded. In addition, the sealing IL part 8 of the cap 3 is welded using ε, 1ΔU/3n or Pb/Sn, or by the welding method. Then, C is connected to each wiring of the IC chip 2 through the wiring of each layer passing through the basso gauge and the via hole to the terminal pad (1).
パッケージ■はピン4の数か増すにつれてし小方向の寸
法が長くなるが、ICチップ2の実装面積はさほと増加
しないので両端に空き領域か生しる。:lンデンサ5は
この空き領域に搭載する。その接着部9には例えば半田
を用いる。第1図(cl LJ多層セラミック型チップ
コンデンサ5の等hlli l+−旧洛図で、5a、5
bは多層に重なるりj向電極、5c。As the number of pins 4 increases, the dimensions of the package (2) in the narrow direction become longer, but the mounting area of the IC chip 2 does not increase significantly, so empty areas are created at both ends. :l Densor 5 is mounted in this empty area. For example, solder is used for the adhesive portion 9. Figure 1 (cl LJ multilayer ceramic chip capacitor 5, etc.)
b is a multi-layered j-direction electrode; 5c;
5dはこれらの一端を共通に接続する外部電極である。5d is an external electrode that commonly connects one end of these.
((j)は接着状態の断面図で、10a、1(11)は
コンデンザ搭載パットである。このパット10a、IO
bは(elに示ずようにそれぞれ多層パッケージの適宜
の層(配線容易性からICチップ搭載面以上の層が好ま
しい)に設&Jた配線]1.12を通してICチップの
内層の電源ラインおよびグランドラインに、またICチ
ップの電源ピン、グランドピンに接続される。コンデン
サ5を2個用いる場合は、これらをライン11.12間
に並列に接続するが、所要容量によってはいずれか一方
を省略しても措ねない。1つのJンデンv′5の容量は
使用するICチップ2によっても異なるが、概ね0.0
1〜5μド程度である。((j) is a cross-sectional view of the bonded state, 10a, 1 (11) is a capacitor mounting pad. This pad 10a, IO
b is (wiring installed in the appropriate layer of the multilayer package (preferably a layer above the IC chip mounting surface for ease of wiring) as shown in el) 1.12 to the power supply line and ground on the inner layer of the IC chip. line, and to the power supply pin and ground pin of the IC chip.If two capacitors 5 are used, they are connected in parallel between lines 11 and 12, but one of them may be omitted depending on the required capacity. The capacity of one J-den V'5 varies depending on the IC chip 2 used, but it is approximately 0.0.
It is about 1 to 5 μm.
第2図fatは本発明の他の実施例で、パッケージ1の
醋)部に四部20を設け、そごにチップコンデンジ
チップ」ンデンザ5の厚み程度で、その底面に1h載ハ
ツトloa、1(lbを設レノる。このようにずれは二
1ンデンザ5がパソゲージ表面に突出することかない。FIG. 2 shows another embodiment of the present invention, in which a four part 20 is provided at the bottom of the package 1, a chip condenser 5 is provided thereon, and a 1h mounting hole loa, 1( lb. In this way, the displacement will prevent the second sensor 5 from protruding onto the surface of the passo gauge.
同図(b)は平面図である。凹部2oの、ls、1面2
0aは閉塞されていてもよいが、開放されているとコン
テン′II−5を半III実装した後のソラノクス6I
5序が容易である。(C1は開放端が狭い凹部21の例
である。このようにするとコンデンリ′5の位置合わせ
が容易になる。尚、(8)の224;lマークごある。Figure (b) is a plan view. ls, 1 side 2 of recess 2o
0a may be blocked, but if it is open, Soranox 6I after half-III implementation of Content 'II-5
The fifth order is easy. (C1 is an example of a concave portion 21 with a narrow open end. This makes it easy to align the condenser '5. Note that there is a 224; l mark in (8).
発明の効果
以上述べたように本発明によれば、多層セラミ・2り型
の1.Cパ・ノゲーシ上に電源、クランI・間のパイパ
スコンテンg−を実装してしま・)ので、該−rンテン
ジ°とICチップ間の距舗が縮まり、内外のタイプによ
る誤動作の防止効果が−・層fr(#実になる。Effects of the Invention As described above, according to the present invention, the multilayer ceramic two-layer 1. Since the bypass content between the power supply and the clan I is mounted on the CPU, the distance between the connector and the IC chip is shortened, and malfunctions due to internal and external types are prevented. -・layer fr(#becomes fruit.
またバイパスコンデンナを搭載する部分はパッケージで
通當余っている領域であるから、該−1ンデンザをパッ
ケージに対し外イ(]げする具体的にはグラン(・板に
搭載する場合より実装密度がIr1i 31:る。In addition, since the part where the bypass condenser is mounted is an area that is left over in the package, it is necessary to remove the -1 condenser from the package (to be more specific, to achieve a higher mounting density than when mounting it on a ground board). is Ir1i 31:ru.
第1図は本発明の一実施例を示す説明図、第2図は本発
明の他の実施例を示す説明図である。
図中、1は多層セラミソクパソノ4− 27.24.1
.10チツプ、5はハ・fパスコ1ンテンサ、I(12
,101)は−1ンう−ンザ1h載バノiである。
出願人 冨十通株式会ン1
代理人弁理士 青 柳 稔
第1@
第2[欠1
((1)
3 ヲFIG. 1 is an explanatory diagram showing one embodiment of the invention, and FIG. 2 is an explanatory diagram showing another embodiment of the invention. In the figure, 1 is multilayer ceramic material 4-27.24.1
.. 10 chips, 5 is H・f passco 1 tensa, I (12
, 101) is Bano i on -1 and 1h. Applicant Tomijutsu Co., Ltd. 1 Representative Patent Attorney Minoru Aoyagi 1 @ 2 [missing 1 ((1) 3 wo)
Claims (3)
パッケージの一部に、それぞれ内1i配線によって電源
ビンとグランドピンに接続されるコンデンザ搭載バンド
を設け、該パッドにチンブコンデンザの電極を接続して
なることを特徴とする半導体装置。(1) A capacitor mounting band is provided in a part of a multilayer ceramic package that houses a semiconductor integrated circuit chip, and is connected to a power supply pin and a ground pin by internal 1i wiring, and the electrodes of a chimbu capacitor are connected to the pads. A semiconductor device characterized by:
ノられたことを特徴とする特許請求の範囲第1項記載の
半導体装置。(2) The semiconductor device according to claim 1, wherein the pad is numbered on the top surface of the multilayer ceramic package.
デンザの厚さ相当の深さを持ちそして該パッケージの長
さ方向端面倒が開放した凹所が設りられ、該凹所の底面
に電源ビンとグランドピンに接続されるコンデンザ搭載
バットが設けられたことを特徴とする特許請求の範囲第
1項記載の半導体装置。(3) A recess with a depth equivalent to the thickness of the tinop capacitor and an open end surface in the longitudinal direction of the package is provided on the top surface of the multilayer ceramic package, and a power supply bottle and a ground pin are provided on the bottom of the recess. The semiconductor device according to claim 1, further comprising a capacitor mounting bat connected to the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16543182A JPS5954248A (en) | 1982-09-22 | 1982-09-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16543182A JPS5954248A (en) | 1982-09-22 | 1982-09-22 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5954248A true JPS5954248A (en) | 1984-03-29 |
Family
ID=15812293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16543182A Pending JPS5954248A (en) | 1982-09-22 | 1982-09-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5954248A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147689A (en) * | 1984-08-13 | 1986-03-08 | 日本電気株式会社 | Plug-in package |
US5719748A (en) * | 1995-06-28 | 1998-02-17 | Honeywell Inc. | Semiconductor package with a bridge for chip area connection |
JP2007162823A (en) * | 2005-12-14 | 2007-06-28 | Borg Warner Morse Tec Japan Kk | Silent chain |
US7728362B2 (en) | 2006-01-20 | 2010-06-01 | International Business Machines Corporation | Creating integrated circuit capacitance from gate array structures |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5399460A (en) * | 1977-02-10 | 1978-08-30 | Nippon Electric Co | Integrated circuit device |
-
1982
- 1982-09-22 JP JP16543182A patent/JPS5954248A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5399460A (en) * | 1977-02-10 | 1978-08-30 | Nippon Electric Co | Integrated circuit device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147689A (en) * | 1984-08-13 | 1986-03-08 | 日本電気株式会社 | Plug-in package |
JPH0476211B2 (en) * | 1984-08-13 | 1992-12-03 | Nippon Electric Co | |
US5719748A (en) * | 1995-06-28 | 1998-02-17 | Honeywell Inc. | Semiconductor package with a bridge for chip area connection |
JP2007162823A (en) * | 2005-12-14 | 2007-06-28 | Borg Warner Morse Tec Japan Kk | Silent chain |
US7728362B2 (en) | 2006-01-20 | 2010-06-01 | International Business Machines Corporation | Creating integrated circuit capacitance from gate array structures |
US8188516B2 (en) | 2006-01-20 | 2012-05-29 | International Business Machines Corporation | Creating integrated circuit capacitance from gate array structures |
US8298888B2 (en) | 2006-01-20 | 2012-10-30 | International Business Machines Corporation | Creating integrated circuit capacitance from gate array structures |
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