JPS5952831A - 光線アニ−ル方法 - Google Patents

光線アニ−ル方法

Info

Publication number
JPS5952831A
JPS5952831A JP16346982A JP16346982A JPS5952831A JP S5952831 A JPS5952831 A JP S5952831A JP 16346982 A JP16346982 A JP 16346982A JP 16346982 A JP16346982 A JP 16346982A JP S5952831 A JPS5952831 A JP S5952831A
Authority
JP
Japan
Prior art keywords
beams
intensity distribution
substrate
annealing
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16346982A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352214B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16346982A priority Critical patent/JPS5952831A/ja
Publication of JPS5952831A publication Critical patent/JPS5952831A/ja
Publication of JPH0352214B2 publication Critical patent/JPH0352214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP16346982A 1982-09-20 1982-09-20 光線アニ−ル方法 Granted JPS5952831A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16346982A JPS5952831A (ja) 1982-09-20 1982-09-20 光線アニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16346982A JPS5952831A (ja) 1982-09-20 1982-09-20 光線アニ−ル方法

Publications (2)

Publication Number Publication Date
JPS5952831A true JPS5952831A (ja) 1984-03-27
JPH0352214B2 JPH0352214B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=15774460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16346982A Granted JPS5952831A (ja) 1982-09-20 1982-09-20 光線アニ−ル方法

Country Status (1)

Country Link
JP (1) JPS5952831A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282869A (ja) * 1991-03-11 1992-10-07 G T C:Kk 薄膜半導体装置の製造方法及びこれを実施するための装置
US7892952B2 (en) * 2001-10-30 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
WO2021145176A1 (ja) * 2020-01-14 2021-07-22 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282869A (ja) * 1991-03-11 1992-10-07 G T C:Kk 薄膜半導体装置の製造方法及びこれを実施するための装置
US7892952B2 (en) * 2001-10-30 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
WO2021145176A1 (ja) * 2020-01-14 2021-07-22 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法

Also Published As

Publication number Publication date
JPH0352214B2 (enrdf_load_stackoverflow) 1991-08-09

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