JPS5951543A - 集積回路用基板の製造方法 - Google Patents
集積回路用基板の製造方法Info
- Publication number
- JPS5951543A JPS5951543A JP16272982A JP16272982A JPS5951543A JP S5951543 A JPS5951543 A JP S5951543A JP 16272982 A JP16272982 A JP 16272982A JP 16272982 A JP16272982 A JP 16272982A JP S5951543 A JPS5951543 A JP S5951543A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- polycrystalline silicon
- substrate
- polycrystalline
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 26
- 239000000377 silicon dioxide Substances 0.000 abstract description 26
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000002048 anodisation reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- KIUKXJAPPMFGSW-MNSSHETKSA-N hyaluronan Chemical compound CC(=O)N[C@H]1[C@H](O)O[C@H](CO)[C@@H](O)C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@@H](C(O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@H](O3)C(O)=O)O)[C@H](O)[C@@H](CO)O2)NC(C)=O)[C@@H](C(O)=O)O1 KIUKXJAPPMFGSW-MNSSHETKSA-N 0.000 description 1
- 229940099552 hyaluronan Drugs 0.000 description 1
- 229920002674 hyaluronan Polymers 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16272982A JPS5951543A (ja) | 1982-09-17 | 1982-09-17 | 集積回路用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16272982A JPS5951543A (ja) | 1982-09-17 | 1982-09-17 | 集積回路用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5951543A true JPS5951543A (ja) | 1984-03-26 |
| JPS6244416B2 JPS6244416B2 (enrdf_load_stackoverflow) | 1987-09-21 |
Family
ID=15760156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16272982A Granted JPS5951543A (ja) | 1982-09-17 | 1982-09-17 | 集積回路用基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5951543A (enrdf_load_stackoverflow) |
-
1982
- 1982-09-17 JP JP16272982A patent/JPS5951543A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244416B2 (enrdf_load_stackoverflow) | 1987-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100243881B1 (ko) | 반도체 기판 및 반도체장치의 제조방법 | |
| KR100750978B1 (ko) | 휨과 구부러짐이 적은 층 구조의 반도체 웨이퍼 및 그 제조방법 | |
| JPH01315159A (ja) | 誘電体分離半導体基板とその製造方法 | |
| JPH0799239A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JPS6155252B2 (enrdf_load_stackoverflow) | ||
| US4310965A (en) | Process for producing a dielectric insulator separated substrate | |
| JPS5951543A (ja) | 集積回路用基板の製造方法 | |
| US3531857A (en) | Method of manufacturing substrate for semiconductor integrated circuit | |
| US4411060A (en) | Method of manufacturing dielectrically-isolated single-crystal semiconductor substrates | |
| JPS5860556A (ja) | 半導体装置の製法 | |
| JPH05275666A (ja) | Ｓｏｉ構造体の製造方法 | |
| JP3102197B2 (ja) | ウエハの誘電体分離方法 | |
| JPS5821854A (ja) | 半導体回路素子 | |
| JP2978680B2 (ja) | 半導体装置の製造方法 | |
| JPS5918654A (ja) | 誘電体分離基板の製造方法 | |
| JPS6244417B2 (enrdf_load_stackoverflow) | ||
| JPS62124753A (ja) | 絶縁層分離基板の製法 | |
| JPS5939044A (ja) | 絶縁分離集積回路用基板の製造方法 | |
| JPH10321549A (ja) | 半導体基板の製造方法 | |
| JPH05175325A (ja) | 誘電体分離基板及びその製造方法 | |
| JPS5895836A (ja) | 半導体集積回路の製造方法 | |
| JPH08222625A (ja) | 誘電体分離基板の製造方法 | |
| JPH02278766A (ja) | 半導体装置の製造方法 | |
| JPS6244413B2 (enrdf_load_stackoverflow) | ||
| JPS6152983B2 (enrdf_load_stackoverflow) |