JPS59500339A - ポリマ−フイルム - Google Patents

ポリマ−フイルム

Info

Publication number
JPS59500339A
JPS59500339A JP83500897A JP50089783A JPS59500339A JP S59500339 A JPS59500339 A JP S59500339A JP 83500897 A JP83500897 A JP 83500897A JP 50089783 A JP50089783 A JP 50089783A JP S59500339 A JPS59500339 A JP S59500339A
Authority
JP
Japan
Prior art keywords
polymer
support
paragraphs
method described
preformed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP83500897A
Other languages
English (en)
Japanese (ja)
Inventor
ウインタ−・クリストフア−・サイモン
トレツドゴ−ルド・リチヤ−ド・ハ−フイ−ルド
Original Assignee
ナシヨナル　リサ−チ　デイベロツプメント　コ−ポレイシヨン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ナシヨナル　リサ−チ　デイベロツプメント　コ−ポレイシヨン filed Critical ナシヨナル　リサ−チ　デイベロツプメント　コ−ポレイシヨン
Publication of JPS59500339A publication Critical patent/JPS59500339A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
JP83500897A 1982-03-05 1983-03-04 ポリマ−フイルム Pending JPS59500339A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB08206563A GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films
GB8206563REGB 1982-03-05
PCT/GB1983/000065 WO1983003165A1 (fr) 1982-03-05 1983-03-04 Films polymeres

Publications (1)

Publication Number Publication Date
JPS59500339A true JPS59500339A (ja) 1984-03-01

Family

ID=10528813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP83500897A Pending JPS59500339A (ja) 1982-03-05 1983-03-04 ポリマ−フイルム

Country Status (4)

Country Link
EP (1) EP0114851A1 (fr)
JP (1) JPS59500339A (fr)
GB (2) GB2117669A (fr)
WO (1) WO1983003165A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611385A (en) * 1982-06-18 1986-09-16 At&T Bell Laboratories Devices formed utilizing organic materials
FR2556244B1 (fr) * 1983-12-09 1986-08-08 Commissariat Energie Atomique Dispositif de formation et de depot sur un substrat de couches monomoleculaires
FR2564231B1 (fr) * 1984-05-10 1986-09-05 Commissariat Energie Atomique Films conducteurs de l'electricite comprenant au moins une couche monomoleculaire d'un complexe organique a transfert de charge et leur procede de fabrication
EP0244835B1 (fr) * 1986-05-09 1992-08-26 Nippon Oil And Fats Company, Limited Membrane ultra-mince du type Langmuir-Blodgett comportant des polyfumurates
FI77679C (fi) * 1987-02-23 1989-04-10 K & V Licencing Oy Filmaggregat och foerfarande foer dess framstaellning.
US5079179A (en) * 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
JPH02501609A (ja) * 1987-10-09 1990-05-31 ヒューズ・エアクラフト・カンパニー ラングミュア・ブロジェット絶縁層を有するＧａＡｓ電気回路装置
DE3843194A1 (de) * 1988-12-22 1990-07-12 Hoechst Ag Amphiphile monomere mit gemischtkettiger struktur und polymere und film aus mindestens einer monomolekularen schicht daraus
DE3911929A1 (de) * 1989-04-12 1990-10-18 Hoechst Ag Amphiphile monomere und polymere und film aus mindestens einer monomolekularen schicht daraus
EP0503420A1 (fr) * 1991-03-15 1992-09-16 Hoechst Aktiengesellschaft Polymères amphiphiles avec des unités silanes et film ayant au moins une couche monomoleculaire à base d'un tel polymère
CN1064379C (zh) * 1998-12-05 2001-04-11 中国科学院固体物理研究所 苯乙烯－马来酸酐交替共聚物孔洞花样薄膜及其制备方法
AU2009240784B2 (en) * 2008-04-24 2014-12-11 Dawson, Mark Solar stills
KR101783420B1 (ko) * 2016-05-12 2017-10-11 한국화학연구원 박막 트랜지스터 절연막용 조성물, 이를 포함하는 절연막 및 유기박막 트랜지스터

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1125258A (en) * 1968-02-08 1968-08-28 Engels Chemiefaserwerk Veb A process for the continuous production of high polymer polyesters or mixed polyesters
GB1218634A (en) * 1968-04-16 1971-01-06 Nat Res Dev Method of very low-temperature heat exchange
GB1572181A (en) * 1975-08-18 1980-07-23 Ici Ltd Device comprising a thin film of organic materila

Also Published As

Publication number Publication date
GB2117669A (en) 1983-10-19
GB8306026D0 (en) 1983-04-07
EP0114851A1 (fr) 1984-08-08
GB2121315B (en) 1985-08-29
WO1983003165A1 (fr) 1983-09-15
GB2121315A (en) 1983-12-21

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