CN110729365A - 基于碲化锑材料的宽响应光谱探测器及其制备方法 - Google Patents
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Abstract
基于碲化锑材料的宽响应光谱探测器及其制备方法，涉及光电技术领域，尤其涉及一种基于拓扑绝缘体材料Sb2Te3和n‑Si的高探测率、高响应率、宽响应光谱的光电探测器及其制备方法。基于碲化锑材料的宽响应光谱探测器，其光谱响应层为拓扑绝缘体材料Sb2Te3薄膜，衬底是n‑Si的异质结衬底。制备过程包括衬底的清洁、Sb2Te3薄膜溅射、退火，以及镀Al电极。与现有制备技术相比，本发明实现了响应范围在250nm‑2400nm的高性能宽光谱原型光电探测器的制备，紫外波段响应到了250nm，在红外波段响应到了2400nm。制备周期短，器件性能好。
Description
技术领域
本发明涉及光电技术领域，尤其涉及一种基于拓扑绝缘体材料Sb2Te3和n-Si的高探测率、高响应率、宽响应光谱的光电探测器制备方法。
背景技术
拓扑绝缘体是近几年材料领域新的研究热点，作为一种新的量子物质态，具有许多新奇的物理特性。拓扑绝缘体完全不同于传统意义上的金属和绝缘体，拓扑绝缘体内部是有能隙的绝缘体，而表面则是具有受时间反演对称性保护的无能隙的金属表面态。这种独特的能带结构使其非常适合用于发展宽光谱探测器。在光电探测领域，现阶段的研究主要集中在Bi2Se3家族的拓扑绝缘体材料的研究上，如Bi2Se3和Bi2Te3等，其主要的特点就是响应波谱很宽。
Sb2Te3和Bi2Te3等材料已被理论和试验证实为拓扑绝缘体材料。Sb2Te3作为拓扑绝缘体家族中的一员，在光电探测领域，相比于Bi2Te3材料来说，报道的较少。然而，Sb2Te3材料并不是一种新的材料，只是长期以来，对其的研究主要是关注其热电性质，其应用也主要是在热电器件、相变存储器和接触电极等方面，其在光电探测领域的研究比较少。近几年，随着拓扑绝缘体概念的提出，光电性能也逐渐被关注。在光电探测器领域，制备拓扑绝缘体薄膜常用的方法有分子束外延法(MBE)、化学气相沉积法(CVD)、金属有机物化学气相沉积法(MOCVD)、激光脉冲沉积法等，用磁控溅射法制备用于光电探测器的拓扑绝缘体薄膜鲜有报道。磁控溅射法制备薄膜具有工艺流程简单、制备成本低、基片温度低和膜基结合力好等优点。低成本的高性能宽频光电探测器是急缺的，而现在已经报道的基于热沉积法制备的Sb2Te3/Si异质结的光电探测器的探测光谱范围为520-980nm(Nanoscale,10,15003,2018)。此外，专利US10096736B1虽然提到了基于Sb2Te3/Si的异质结型光电探测器，但并没有给出其光电性响应性能以及探测光谱的范围。
发明内容
本发明的目的在于提供一种高性能宽频光电探测器制备方法，通过使用磁控溅射法和快速退火处理，有效的控制制备成本及周期。
基于碲化锑材料的宽响应光谱探测器，其特征在于光谱响应层为拓扑绝缘体材料Sb2Te3薄膜，衬底是n-Si的异质结衬底。
所述基于碲化锑材料的宽响应光谱探测器，其具体制备步骤如下：
S1，衬底的清洁：清洗、干燥衬底，使其表面无杂物；
S2，Sb2Te3薄膜溅射：采用磁控溅射设备，真空度7.5×10-4Pa以下，溅射功率120W-200W的条件下溅射150s-200s，得到Sb2Te3薄膜；
S3，退火：Sb2Te3薄膜在退火炉中，在280℃-300℃的温度下保温10-20min，其升温速率为3℃/s，通过该退火过程使薄膜由非晶态转变为多晶态；
S4，镀Al电极：退火完成后，在Sb2Te3薄膜的中心区域以及交界处盖上模具，使其中心区域的面积约为0.09-0.25cm2，通过物理气相沉积法，镀上Al电极。
与现有制备技术相比，本发明虽然采用的是低成本的磁控溅射法制备基于Sb2Te3材料的光电探测器，很好的降低了制备成本。此外，在薄膜的退火过程中使用了快速退火处理，极大的缩短了退火时间，提高了制备效率。该方法在简单的设备和简洁的工艺条件下，实现了响应范围在250nm-2400nm的高性能宽光谱原型光电探测器的制备，紫外波段响应到了250nm，在红外波段响应到了2400nm。制备周期短，器件性能好。
附图说明
图1为实施例1探测器结构示意图。
图2为实施例1探测器Sb2Te3薄膜的紫外-可见光吸收光谱图。
图3为实施例1探测器Sb2Te3-Si的异质结型光电探测器I-V图。
图4为实施例1探测器响应率和探测率图。
图5为实施例1探测器宽光谱响应测试图。
其中，n-Si衬底1，Sb2Te3薄膜层2，Al电极层3，光4，导线5。
具体实施方式
下面结合实施例对本发明作进一步说明。
实施例1：碲化锑基宽响应光谱探测器，其光谱响应层为拓扑绝缘体材料Sb2Te3薄膜，衬底是n-Si的异质结衬底。
探测器从下到上，分别为n-Si衬底1、Sb2Te3薄膜层2，Al电极层3。
该探测器的制备步骤具体如下：
S1，清洁衬底：裁剪一块2.5cm×5cm的n-Si衬底1，将其放入氨水：双氧水：去离子水之比为1:1:3的溶液中，在80℃的条件下，加热30min，以清洁n-Si衬底。
S2，Sb2Te3薄膜层溅射：把清洁好的n-Si衬底放入磁控溅射设备中的样品台上，并用清洁的模具遮住半个区域，然后打开磁控溅射设备，进行抽真空，待真空度抽至7.5×10- 4Pa以下后，先进行预溅射，预溅射完成后设置溅射功率为120W,工作压力设为7.0Pa，溅射时间为200s，设置完参数后即可开始溅射。
S3，退火：薄膜制备完成后，取出置于快速退火炉中。设置升温速率为3℃/s，退火温度为280℃，退火时间为10min，设置完成后，打开机械泵，待5分钟后，开始退火。
S4，镀Al电极层：退火完成后，取出薄膜，然后在Sb2Te3薄膜的中心区域以及交界处盖上模具，使其中心区域的面积约为0.09cm2，然后通过物理气相沉积法，镀上Al电极。
Al电极镀完后，取出并引出导线5，对其进行光电性能的测试。
如图2所示，为Sb2Te3薄膜的紫外-可见光吸收光谱图，制备的Sb2Te3薄膜具有很宽的吸收范围。
如图3所示，为制备的低成本高性能宽光谱Sb2Te3-Si异质结光电探测器的I-V特征曲线图，在波长为2400nm，功率密度为1.0868μW/cm2的光照下，器件表现出明显的光电响应。
如图4所示，该器件在2400nm的光照下电流响应率(R)达到了270A/W,探测率达到了1.28×1013Jones，展现出其在发展高性能的宽光谱探测器方面具有极其重要的应用价值。
如图5所示，为了研究该器件的响应光谱范围，还测试了其在250-2400nm光照条件的I-V特性曲线，结构表明该法制备的光电原型器件在紫外-可见-红外范围内均有光电响应，可以很好的应用于宽光谱探测器。
本发明提到的一个或多个步骤并不排斥所述组合步骤还存在其他方法及操作过程；还应注意，该实例仅用于说明本发明的可行性，而不是限制本发明的范围。除此之外，在无实质性改变制备技术内容的情况下，亦当视为本发明的可实施范畴。
Claims (2)
1.基于碲化锑材料的宽响应光谱探测器，其特征在于光谱响应层为拓扑绝缘体材料Sb2Te3薄膜，衬底是n-Si的异质结衬底。
2.如权利要求1所述基于碲化锑材料的宽响应光谱探测器，其特征在于该探测器具体制备步骤如下：
S1，衬底的清洁：清洗、干燥衬底，使其表面无杂物；
S2，Sb2Te3薄膜溅射：采用磁控溅射设备，真空度7.5×10-4Pa以下，溅射功率120W-200W的条件下溅射150s-200s，得到Sb2Te3薄膜；
S3，退火：Sb2Te3薄膜在退火炉中，在280℃-300℃的温度下保温10-20min，其升温速率为3℃/s，通过该退火过程使薄膜由非晶态转变为多晶态；
S4，镀Al电极：退火完成后，在Sb2Te3薄膜的中心区域以及交界处盖上模具，使其中心区域的面积约为0.09-0.25cm2，通过物理气相沉积法，镀上Al电极。
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| CN112687809A (zh) * | 2020-12-29 | 2021-04-20 | 电子科技大学 | 一种碲化锑光电探测器件及其制备方法 |
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| CN111341861A (zh) * | 2020-02-17 | 2020-06-26 | 昆明物理研究所 | 基于p-GeTe/n-Si光伏型红外探测器及其制备方法 |
| CN112420876A (zh) * | 2020-12-03 | 2021-02-26 | 哈尔滨工业大学 | 一种从日盲紫外到近红外的宽波段探测器的制备方法 |
| CN112687809A (zh) * | 2020-12-29 | 2021-04-20 | 电子科技大学 | 一种碲化锑光电探测器件及其制备方法 |
| CN112687809B (zh) * | 2020-12-29 | 2022-04-15 | 电子科技大学 | 一种碲化锑光电探测器件及其制备方法 |
| CN113299778A (zh) * | 2021-05-26 | 2021-08-24 | 哈尔滨工业大学 | 硒化铋/碲化铋超晶格红外双波段探测器及其制备方法 |
| CN114927586A (zh) * | 2022-03-15 | 2022-08-19 | 中国民用航空飞行学院 | 一种基于新型三元材料的异质结光电探测器及制备方法 |
| CN114927587A (zh) * | 2022-03-15 | 2022-08-19 | 中国民用航空飞行学院 | 一种基于三元材料平面隧穿效应的光电探测器及制备方法 |
| CN114927586B (zh) * | 2022-03-15 | 2024-03-22 | 中国民用航空飞行学院 | 一种基于新型三元材料的异质结光电探测器及制备方法 |
| CN114927587B (zh) * | 2022-03-15 | 2024-03-22 | 中国民用航空飞行学院 | 一种基于三元材料平面隧穿效应的光电探测器及制备方法 |
| CN115000208A (zh) * | 2022-04-26 | 2022-09-02 | 昆明物理研究所 | 碲化锡薄膜/锗异质结宽谱光电探测器及其制备方法 |
| CN115000208B (zh) * | 2022-04-26 | 2023-10-20 | 昆明物理研究所 | 碲化锡薄膜/锗异质结宽谱光电探测器及其制备方法 |
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