CN111341861A - 基于p-GeTe/n-Si光伏型红外探测器及其制备方法 - Google Patents
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Abstract
基于p‑GeTe/n‑Si光伏型红外探测器及其制备方法，属于红外探测领域，尤其是一种光伏型红外探测器。本发明由n型单晶Si基片、p型GeTe薄膜和两个电极构成；其中p型GeTe薄膜设置在单晶Si基片之上；两个电极其中一个设置在Si基片表面，另一个设置在GeTe薄膜表面。制备过程包括基片清洗、GeTe薄膜溅射、电极蒸镀、退火步骤。本发明具有工艺简单，易于集成，成本低，响应快，探测率高等优点，且可以在室温下工作，在红外探测领域具有重要的应用前景。
Description
技术领域
本发明属于红外探测领域，尤其是一种光伏型红外光电探测器。
背景技术
红外探测在军事、电力、工业、夜视、生物、监测等领域有极为广泛的应用。光伏型红外探测器由于响应时间短，在对响应时间要求高的场合有着不可替代的作用。目前，商业化的红外探测器主要有碲镉汞探测器、碲化铟探测器、非晶硅探测器和氧化钒探测器等。其中，非晶硅探测器和氧化钒探测器在常温下工作，但探测效果不够理想。碲镉汞探测器、碲化铟探测器因探测率较高常用作军事领域，但使用过程中需要制冷，且由于探测器光敏材料与其后端读出电路晶格不匹配，难以有效集成。导致探测器集成度低，生产成本过高，难以展开大面积的应用。
发明内容
本发明的目的在于提供一种便于集成,低成本,可室温下使用的高探测率的光伏型红外探测器。
本发明基于p-GeTe/n-Si光伏型红外探测器，其特征在于所述探测器由n型单晶Si基片、p型GeTe薄膜和两个电极构成；其中：
p型GeTe薄膜设置在单晶Si基片之上；
两个电极其中一个设置在Si基片表面，另一个设置在GeTe薄膜表面。
所述的p型GeTe薄膜厚度为20-60nm。
所述的电极为Al、Au或ITO，厚度为50-150nm。
所述的基于p-GeTe/n-Si光伏型红外探测器，其制备步骤如下：
S1，基片清洗：先将n型单晶Si基片浸泡于由离子水、双氧水、氨水按照2～3:1:1的体积比混合的溶液中，在70～85℃下，清洗30～90min，然后将基片冲洗干净，吹干；
S2，GeTe薄膜溅射：将基片放在磁控溅射仪中，10-5Pa真空环境下，充Ar气，使腔体气压保持在3～5Pa，使用GeTe靶材溅射60-200s，使得厚度达到20-60nm；
S3，电极蒸镀或退火；
电极蒸镀是将经S2处理的器件放入真空蒸镀室中，真空度小于10-5Pa后，在GeTe和Si表面分别蒸镀电极30-90s，使得电极厚度达到50-150nm；
退火是将经S3处理的器件取出，在260-400℃范围退火10-20min。
S4，根据S3步骤选择是退火或电极蒸镀，不与步骤S3相同。
本发明具有工艺简单，成本低，探测率高，与目前常规探测器的探测率对比如表1所示等优点，且可以在室温下工作，在红外探测领域具有一定的应用前景。同时，GeTe作为相变材料，已成为下一代存储和计算的关键材料。本发明所述探测器的优势在于利用GeTe/Si的异质结作为光敏层，利于将来探测器材料与读出电路的整合，便于探测器的小型化和集成化，降低探测器的成本。
表.1常见商用探测器的探测率对比
| 探测所用材料 | 使用环境 | 探测率(D*) | 备注 |
| p-GeTe/n-Si | 室温 | 10<sup>11</sup>Jones | 本专利 |
| 碲镉汞 | 77K | 10<sup>10</sup>～10<sup>13</sup>Jones | 根据使用波段有所不同 |
| 碲化铟 | 77K | 10<sup>12</sup>Jones | |
| 非晶硅 | 室温 | 10<sup>10</sup>Jones | |
| 氧化钒 | 室温 | 10<sup>8</sup>Jones |
。
附图说明
图1为本发明实施例1所述探测器结构示意图。
图2为本发明实施例2和实施例3所述探测器结构示意图。
图3为GeTe薄膜为实施例2退火前后XRD图；
图中可以明显看出退火后GeTe薄膜有明显的衍射峰从非晶态变为晶态。
图4为GeTe薄膜为实施例1退火前后的紫外-可见-红外吸收光谱图；
图中可以明显看出退火后薄膜对红外光谱的吸收增强，有利于器件吸收红外信号。
图5为实施例1所述探测器无光照和红外光照射条件下的I-V曲线图；
图中可以明显看出器件在红外光照射下有0.1V的光生电压。
图6为实施例1探测器的探测率图；
明显看出器件探测率大约为1011Jones。
其中，Si基片1，GeTe薄膜2，电极3。
具体实施方式
实施例1：基于p-GeTe/n-Si光伏型红外探测器，从下往上分别是Si基片1、GeTe薄膜2和电极3。
所述电极3为两个，其中一个在Si基片1表面上，另一个在GeTe薄膜2上表面。如图1所示。
其中，α相GeTe薄膜2光敏层厚度为40nm；电极3为Al电极，厚度50nm。
所述的探测器，具体制备步骤如下：
S1，基片清洗:先将n型单晶Si基片浸泡于由离子水、双氧水、氨水按照2:1:1的体积配比混合的溶液中，在80℃下，清洗30min；随后，用去离子水冲洗干净，再用压缩空气吹干，以彻底清除基片表面吸附的杂质。
S2，GeTe薄膜溅射：将基片放在磁控溅射仪中，先抽真空到10-5Pa，随后充Ar气，使腔体气压保持在5Pa范围后，使用GeTe靶材溅射140s，厚度达到40nm。
S3，电极蒸镀：将溅射好GeTe的器件放入真空蒸镀室中，真空度小于10-5Pa后，在GeTe和Si表面同时蒸镀Al电极30s，厚度达50nm。
S4，退火：将蒸镀了Al电极的器件取出，并在300℃范围退火15min。
实施例2：基于p-GeTe/n-Si光伏型红外探测器，从下往上分别是ITO电极3、Si基片1、GeTe薄膜2和Al电极3。如图2所示。
所述的n型Si为基片1一面带有ITO薄膜，即Si基片1与ITO电极3为一体。
所述的GeTe薄膜2厚度20nm；电极3为Al电极，厚度100nm。
所述的探测器，具体制备步骤如下：
S1，基片清洗：先将带有ITO薄膜的n型Si基片浸泡于由离子水、双氧水、氨水按照2:1:1的体积配比混合的溶液中，在70℃下，清洗50min；随后，用去离子水冲洗干净，再用压缩空气吹干，以彻底清除基片表面吸附的杂质。
S2，GeTe薄膜溅射：将带有ITO薄膜的n型Si基片放在磁控溅射仪中，Si面朝上，ITO面向下，先抽真空到10-5Pa，随后充Ar气，使腔体气压保持在5Pa范围后，使用GeTe靶材溅射90s，使厚度达到20nm。
S3，退火：将溅射好GeTe薄膜的基片取出，并在360℃范围退火10min。
S4，电极蒸镀：将退火后的器件放入真空蒸镀室中，当真空度小于10-5Pa后，在GeTe薄膜表面蒸镀Al电极60s，使厚度达到100nm。
实施例3：基于p-GeTe/n-Si光伏型红外探测器，从下往上分别是Au电极3，n型单晶Si基片1、GeTe薄膜2和Al电极3。如图2所示。
所述的Au电极3厚度100nm；GeTe薄膜2厚度为50nm；Al电极3厚度150nm。
所述的探测器，具体制备步骤如下：
S1，基片清洗:先将n型单晶Si基片浸泡于由离子水、双氧水、氨水按照2:1:1的体积配比混合的溶液中，在85℃下，清洗40min。随后，用去离子水冲洗干净，再用压缩空气吹干，以彻底清除基片表面吸附的杂质。
S2，GeTe薄膜溅射：将n型单晶Si基片放在磁控溅射仪中，先抽真空到10-5Pa，随后充Ar气，使腔体气压保持在4Pa范围后，使用GeTe靶材溅射200s，使厚度达60nm。
S3，退火：将溅射好GeTe薄膜的基片取出，并在260℃范围退火20min。
S4，电极蒸镀：将退火后的器件放入真空蒸镀室中，当真空度小于10-5Pa后，在GeTe表面蒸镀Al电极90s，使厚度达150nm；对器件翻面后，在Si表面蒸镀Au电极40s，使厚度达50nm。
Claims (4)
1.基于p-GeTe/n-Si光伏型红外探测器，其特征在于所述探测器由n型单晶Si基片、p型GeTe薄膜和两个电极构成；其中：
p型GeTe薄膜设置在单晶Si基片之上；
两个电极其中一个设置在Si基片表面，另一个设置在GeTe薄膜表面。
2.如权利要求1所述的基于p-GeTe/n-Si光伏型红外探测器，其特征在于所述的电极为Al、Au或ITO。
3.如权利要求1所述的基于p-GeTe/n-Si光伏型红外探测器，其特征在于所述的p型GeTe薄膜厚度为20-60nm；电极厚度为50-150nm。
4.如权利要求1所述的基于p-GeTe/n-Si光伏型红外探测器，其特征在于所述的红外探测器，其制备步骤如下：
S1，基片清洗：先将n型单晶Si基片浸泡于由离子水、双氧水、氨水按照2～3:1:1的体积比混合的溶液中，在70～85℃下，清洗30～90min，然后将基片冲洗干净，吹干；
S2，GeTe薄膜溅射：将基片放在磁控溅射仪中，10-5Pa真空环境下，充Ar气，使腔体气压保持在3～5Pa，使用GeTe靶材溅射60-200s，使得厚度达到20-60nm；
S3，电极蒸镀或退火；
电极蒸镀是将经S2处理的器件放入真空蒸镀室中，真空度小于10-5Pa后，在GeTe和Si表面分别蒸镀电极30-90s，使得电极厚度达到50-150nm；
退火是将经S3处理的器件取出，在260-400℃范围退火10-20min。
S4，根据S3步骤选择是退火或电极蒸镀，不与步骤S3相同。
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| CN114167477A (zh) * | 2021-12-08 | 2022-03-11 | 电子科技大学 | 一种基于薄膜探测器的频闪检测系统及设计制作方法 |
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