CN110739359A - α相GeTe宽光谱红外探测器及其制备方法 - Google Patents
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Abstract
α相GeTe宽光谱红外探测器及其制备方法，属于光电子技术领域，尤其是一种薄膜宽光谱红外探测器。本发明α相GeTe宽光谱红外光电探测器，从下往上分别是基底、α相GeTe光敏层和金属电极层，制备过程包括基底清洗、α相GeTe薄膜溅射、GeTe退火、电极蒸镀过程。本发明具有工艺简单，成本低，响应度高，探测率高等优点，且可以在室温下工作，在红外探测领域具有重要的应用前景。同时，GeTe作为相变材料，已成为下一代存储和计算的关键材料。
Description
技术领域
本发明属于光电子技术领域，尤其是一种薄膜宽光谱红外探测器。
背景技术
红外探测器在军事、电力、工业等领域有极为广泛的应用。目前，常用于制备红外探测器的光敏材料主要有碲镉汞、碲化铟、非晶硅、氧化钒等。但由于探测器光敏材料与其后端读出电路晶格不匹配，现有的红外探测器和后端的集成电路通常分别生产后，采用铟柱倒装互联的方式进行集成，这种生产和集成方式，生产成本过高，导致红外热像仪价格居高不下。
发明内容
本发明的目的在于提供一种低成本、高探测率的红外光电探测器。
本发明α相GeTe宽光谱红外探测器及其制备方法，其特征在于所述探测器从下往上分别是基底、α相GeTe光敏层和金属电极层。
其中，基底为不导电介质，如普通玻璃、石英玻璃或SiO2。
所述α相GeTe薄膜层，厚度为20-60nm。
所述金属电极层为Al、Au或ITO，厚度为50-150nm。
所述的α相GeTe宽光谱红外探测器，其制备步骤如下：
S1，基底清洗吹干，以彻底清除基底表面吸附的杂质；
S2，α相GeTe薄膜层溅射：在磁控溅射机中，10-5Pa真空环境下，充Ar气，使腔体气压保持在3-5Pa，使用GeTe靶材溅射60-200s，使得厚度达到20-60nm；
S3，退火：将溅射好GeTe薄膜的基底取出，并在260-300℃范围退火10-20min；
S4，电极蒸镀：将退火后的器件放入真空蒸镀室中，真空度小于10-5Pa后，蒸镀电极30-90s，使得厚度达到50-150nm。
本发明具有工艺简单，成本低，响应度高，探测率高等优点，且可以在室温下工作，在红外探测领域具有重要的应用前景。同时，GeTe作为相变材料，已成为下一代存储和计算的关键材料。本发明利用GeTe作为光敏层，利于探测器材料和下一代读出电路的整合，便于器件的小型化和集成化。
附图说明
图1为本发明探测器结构示意图。
图2为GeTe薄膜退火前后XRD图；
图中可以明显看出退火后GeTe薄膜从非晶变为晶体。
图3为GeTe薄膜退火前后的紫外-可见-红外吸收光谱图；
图中可以明显看出退火前后薄膜对光谱的吸收不同。
图4为实施例2探测器无光照和红外光照射条件下的I-V曲线图；
图中可以明显看出器件对红外光照射有较大响应。
图5为实施例2探测器的探测率图；
明显看出器件探测率大约为1014J。
其中，基底1，α相GeTe光敏层2，金属电极层3。
具体实施方式
实施例1：α相GeTe宽光谱红外探测器，从下往上分别是基底1、α相GeTe光敏层2和金属电极层3。
其中，基底1为石英玻璃；α相GeTe光敏层2厚度为20nm；金属电极层3为Al电极，厚度50nm。
所述的探测器，具体制备步骤如下：
S1，基底清洗:先将基底浸泡于离子水、双氧水和氨水按照2:1:1配比混合的溶液中，在80℃下，清洗60min。随后，用去离子水冲洗干净，再用压缩空气吹干，以彻底清除基底表面吸附的杂质。
S2，α相GeTe薄膜层溅射：将基底放在磁控溅射机中，先抽真空到10-5Pa，随后充Ar气，使腔体气压保持在3Pa范围后，使用α相GeTe靶材溅射180s，厚度达到20nm。
S3，退火：将溅射好的GeTe薄膜的基底取出，并在300℃范围退火10min。
S4，Al电极蒸镀：将退火后的器件放入真空蒸镀室中，当真空度小于10-5Pa后，蒸镀Al电极30s，厚度达50nm。
实施例2：α相GeTe宽光谱红外探测器，从下往上分别是基底1、α相GeTe光敏层2和金属电极层3。
其中，基底1为普通玻璃；α相GeTe薄膜层2厚度30nm；金属电极层3为Al电极，厚度100nm。
所述的探测器，具体制备步骤如下：
S1，基底清洗：先将基底浸泡于离子水、双氧水和氨水按照2.5:1:1配比混合的溶液中，在80℃下，清洗50min。随后，用去离子水冲洗干净，再用压缩空气吹干，以彻底清除基底表面吸附的杂质。
S2，α相GeTe薄膜层溅射：将基底放在磁控溅射机中，先抽真空到10-5Pa，随后充Ar气，使腔体气压保持在5Pa范围后，使用GeTe靶材溅射120s，使厚度达到30nm。
S3，退火：将溅射好GeTe薄膜的基底取出，并在260℃范围退火10min。
S4.Al电极蒸镀：将退火后的器件放入真空蒸镀室中，当真空度小于10-5Pa后，蒸镀Al电极60s，使厚度达到100nm。
实施例3：α相GeTe宽光谱红外探测器，从下往上分别是基底1、α相GeTe光敏层2和金属电极层3。
其中，基底1为SiO2；α相GeTe光敏层2，厚度为60nm，金属电极层3为Al电极，厚度150nm。
所述的探测器，具体制备步骤如下：
S1，基底清洗:先将基底浸泡于离子水、双氧水和氨水按照3:1:1配比混合的溶液中，在100℃下，清洗30min。随后，用去离子水冲洗干净，再用压缩空气吹干，以彻底清除基底表面吸附的杂质。
S2，α相GeTe薄膜层溅射：将基底放在磁控溅射机中，先抽真空到10-5Pa，随后充Ar气，使腔体气压保持在4Pa范围后，使用GeTe靶材溅射200s，使厚度达60nm。
S3，退火：将溅射好GeTe薄膜的基底取出，并在260℃范围退火20min。
S4，Al电极蒸镀：将退火后的器件放入真空蒸镀室中，当真空度小于10-5Pa后，蒸镀Al电极90s，使厚度达150nm。
Claims (4)
1.α相GeTe宽光谱红外探测器，其特征在于α相GeTe宽光谱红外探测器，从下往上分别是基底、α相GeTe光敏层和金属电极层。
2.如权利要求1所述的α相GeTe宽光谱红外探测器，其特征在于所述基底为不导电介质，如：普通玻璃、石英玻璃、SiO2，所述金属电极层为Al、Au或ITO。
3.如权利要求1所述的α相GeTe宽光谱红外探测器，其特征在于所述α相GeTe薄膜层厚度为20-60nm，金属电极层的厚度50-150nm。
4.权利要求1所述α相GeTe宽光谱红外探测器，其特征在于该探测器的制备步骤如下：
S1，基底清洗吹干，以彻底清除基底表面吸附的杂质；
S2，α相GeTe薄膜层溅射：在磁控溅射机中，10-5Pa真空环境下，充Ar气，使腔体气压保持在3-5Pa，使用GeTe靶材溅射60-200s，使得厚度达到20-60nm；
S3，退火：将溅射好GeTe薄膜的基底取出，并在260-300℃范围退火10-20min；
S4，电极蒸镀：将退火后的器件放入真空蒸镀室中，真空度小于10-5Pa后，蒸镀电极30-90s，使得厚度达到50-150nm。
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| CN111341861A (zh) * | 2020-02-17 | 2020-06-26 | 昆明物理研究所 | 基于p-GeTe/n-Si光伏型红外探测器及其制备方法 |
| CN113388803A (zh) * | 2021-06-15 | 2021-09-14 | 北京航空航天大学杭州创新研究院 | 一种高热电功率因子碲化锗薄膜及其制备方法 |
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| CN106601837A (zh) * | 2016-11-23 | 2017-04-26 | 中山大学 | 一种超宽光谱光敏材料和应用该光敏材料的光电探测器 |
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| CN111341861A (zh) * | 2020-02-17 | 2020-06-26 | 昆明物理研究所 | 基于p-GeTe/n-Si光伏型红外探测器及其制备方法 |
| CN113388803A (zh) * | 2021-06-15 | 2021-09-14 | 北京航空航天大学杭州创新研究院 | 一种高热电功率因子碲化锗薄膜及其制备方法 |
| CN113388803B (zh) * | 2021-06-15 | 2023-09-12 | 北京航空航天大学杭州创新研究院 | 一种高热电功率因子碲化锗薄膜及其制备方法 |
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