CN115000208B - 碲化锡薄膜/锗异质结宽谱光电探测器及其制备方法 - Google Patents
碲化锡薄膜/锗异质结宽谱光电探测器及其制备方法 Download PDFInfo
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- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 45
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000011888 foil Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 11
- 238000001228 spectrum Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910005642 SnTe Inorganic materials 0.000 description 12
- 238000005286 illumination Methods 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002135 nanosheet Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- UURRKPRQEQXTBB-UHFFFAOYSA-N tellanylidenestannane Chemical compound [Te]=[SnH2] UURRKPRQEQXTBB-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
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Abstract
基于碲化锡薄膜/锗异质结宽谱光电探测器及其制备方法，涉及可见至近红外波段的宽光谱光电探测领域，尤其涉及一种基于新型二维半导体材料的高探测率、高响应率的光电探测器及其制备方法。本发明方法采用二维半导体材料碲化锡薄膜为构建异质结的p‑型材料，基底采用锗衬底。采用“一步式”直流溅射法在清洗、预掩膜后的锗基底上，直接溅射碲化锡薄膜以制备碲化锡薄膜/锗异质结。去除掩膜后，热蒸镀金属Al电极以制备光伏探测器原型器件。与现有制备技术相比，本发明制备方法简单高效、低成本，低功耗，实现了可见至近红外波段（400‑1050 nm）的室温工作的碲化锡薄膜/锗异质结宽谱光电探测器的制备。制备工艺高效、简单，室温下器件响应率、探测率高。
Description
技术领域
本发明涉及光电探测技术领域，尤其涉及一种基于新型二维半导体材料碲化锡/锗异质结的可见光-近红外的宽谱光电探测器及其制备方法。
背景技术
基于异质结的光电探测器由于具有内建电场，使光生载流子的分离和传输效率提升,从而会使光电探测性能提升,因此在光电探测领域的研究中具有重要意义。新型二维材料凭借其各自的优点近年来开始在光电探测领域备受关注。碲化锡做为一种新型二维材料,也是第一个被理论预测并被实验验证的拓扑晶体绝缘体。由于其具有无带隙的拓扑表面态和窄带隙体态以及室温下高的迁移率等优异性能，从而使碲化锡在制备宽谱、高性能和低功耗的新型光电探测器有重要潜力。
然而,有关碲化锡(SnTe)材料的研究近些年主要集中在其热电性能和新颖的物理特性方面的研究上，而在光电探测领域方面的研究仍然很少。目前，已有少量SnTe基光导型探测器制备成功，证明了该材料在可见光到红外波段可以取得稳定的光电响应。但是，仍然存在一些问题，比如SnTe/Bi2Te3/SrTiO3光导型探测器采用分子束外延法(MBE)制备，其制备方法昂贵、复杂，对衬底要求高，需要制备Bi2Te3缓冲层以减少钛酸锶(SrTiO3)衬底与SnTe薄膜之间的晶格失配。SnTe纳米片/云母光导型探测器采用化学气相沉积法(CVD)制备，但制备得的SnTe纳米片面积小，不便于光电探测器的制备。SnTe量子点/Si光导型探测器采用旋涂法制备，其器件性能仍然有待提高。因此构造SnTe基光伏型器件结构，被认为是有效提高SnTe基器件的性能的一种途径。然而目前，只有硅和Bi2Se3被选择做为n型异质材料用于SnTe基光伏探测器的制备尝试。采用CVD方法制备的SnTe/Si异质结虽然对近红外光的强响应，在808nm(100mW/cm-2)激光光照下显示出很好的器件性能，其响应率(R)为128mA/W，探测率(D*)为8.4×1012cmHz1/2W-1；但并未给出更长波段(1064nm或1550nm)下的探测率和响应率数值。而采用PVD方法制备的SnTe/Bi2Se3异质结，其在1550nm光照下响应率为145.74mA/W，探测率为1.15×1010cmHz1/2W-1，其器件性能还有很大的上升空间。因此，迫切需要探索一种高效、低成本的异质结制备方法，并选择合适的替代性异质材料以提高SnTe基探测器性的性能。
发明内容
本发明的目的在于提供一种高效、低成本的室温工作的碲化锡薄膜/锗异质结宽谱光电探测器及其制备方法。通过采用“一步”磁控溅射方法制备碲化锡薄膜/锗垂直异质结，以期提高碲化锡基光电探测器的响应率和探测率等性能，并有效降低其制备成本、简化制备工艺。
碲化锡薄膜/锗异质结光电探测器，其特征在于所述探测器锗为衬底，功能层为碲化锡薄膜，以碲化锡为靶材，采用射频磁控溅射法溅射于衬底上。
碲化锡薄膜/锗异质结光电探测器，该探测器从下至上分别为锗衬底、碲化锡薄膜层和铝电极层；
所述碲化锡薄膜上采用“回”字型Al电极形状，“回”字型Al电极中心为入射光入射区域，区域面积小于等于4mm2，锗衬底上采用方形Al电极。
碲化锡薄膜/锗异质结光电探测器，制备步骤如下：
S1，锗衬底清洁；
S2，采用铝箔掩膜衬底四周；
S3,使用磁控溅射设备，采用射频模式，真空度≤8.5×10-5Pa，，Ar2流量保持在80sccm，碲化锡靶材溅射功率设置为40-80W，在已经预掩模过的锗衬底上溅射5-10s，得到碲化锡薄膜；
S4,金属Al电极的制备：制备好的碲化锡薄膜去除掩膜后，裁剪出“回”字型Al电极铝箔进行二次掩膜在碲化锡薄膜上，“回”字型Al电极中心暴露出来的区域作为有效光敏面暴露在Al电极上，在锗衬底上则采用方块形Al电极。
本发明的工艺经过制备工艺参数的不断优化，最终选取了适宜的靶材功率，从而在不加衬底温度、不退火的条件下即制备出已经晶化的原生片碲化锡薄膜。与现有制备技术相比，本发明制备方法高效、低成本，低功耗，实现了可见至近红外波段(400-1050nm)室温工作的碲化锡薄膜/锗异质结宽谱光电探测器的制备。制备工艺高效、简单，室温下器件响应率、探测率高。
本发明异质结构的制备为碲化锡基光伏探测器的可替代n型异质材料提供了另一种可能性，并且展现出其在宽谱、高性能和低功耗光电探测器方面的重要应用价值。
附图说明
图1为实施例1探测器结构示意图。
图2为实施例1探测器碲化锡薄膜高分辨率的透射电镜(HRTEM)图。
图3为实施例1探测器碲化锡薄膜面间距测量图。
图4为实施例1碲化锡薄膜/锗异质结光电探测器分别在无光照和波长为1050nm、850nm、660nm和400nm光照下的J-V特性曲线。
图5为实施例1碲化锡薄膜/锗异质结光电探测器在无光照和波长为850nm光照下的Log J-V特性曲线。
其中，1为锗基底，2为碲化锡薄膜，3为铝电极，4为入射光，5为金线。
具体实施方式
下面结合实施例对本发明作进一步说明。
实施例1：碲化锡薄膜/锗异质结光电探测器，该探测器从下至上分别为锗衬底1、碲化锡薄膜层2和铝电极层3；
所述碲化锡薄膜上采用“回”字型Al电极形状，“回”字型Al电极中心为入射光4入射区域，区域面积小于等于4mm2，锗衬底上采用方形Al电极。
所述导线为金线5。
所述碲化锡薄膜，以碲化锡为靶材，采用射频磁控溅射法溅射。
碲化锡薄膜/锗异质结光电探测器，制备步骤如下：
S1，锗衬底的清洁：采用电阻率为1-5ohm·cm的Ge(100)为衬底，锗衬底依次在乙醇、丙酮溶液中进行超声清洗15min，然后用高纯氮气吹干。
S2，锗衬底的预掩膜：采用铝箔掩膜衬底四周。
S3,碲化锡薄膜溅射：使用磁控溅射设备，采用射频模式，当真空度≤8.5×10-5Pa后，设定Ar2流量保持在80sccm，碲化锡靶材溅射功率设置为80W，在已经预掩模过的锗衬底上溅射10s，得到碲化锡薄膜。
S4,金属Al电极的制备：制备好的碲化锡薄膜去除掩膜后，裁剪出“回”字型Al电极铝箔进行二次掩膜在碲化锡薄膜上，“回”字型Al电极中心暴露出来的区域面积为4mm2，通过热蒸发法在锗衬底上形成方块Al电极；将方形窗口作为有效光敏面暴露在Al电极上，有利于提高电荷的收集效率；
去除掩膜的部分为没碲化锡薄膜的空白区域。
S5，Al电极制备完成，分别在两个不同形状的Al电极上点银浆，引出金线，并置于真空干燥箱中，在80℃的温度下，烘烤2小时，干燥固化银浆。
器件制备完成后，引出导线，对器件进行光电性能测试。如图2所示，为探测器碲化锡薄膜高分辨率的透射电镜(HRTEM)图，其晶体结构归属于盐岩矿面心立方结构，在图中出现清晰的晶格条纹，为(200)晶面。
如图3所示，为碲化锡薄膜面间距测量图，面间距为对应碲化锡面心立方结构(200)晶面。
如图4所示，为碲化锡薄膜/锗异质结光电探测器分别在无光照和波长为1050nm、850nm、660nm和400nm光照下的J-V特性曲线，器件在400-1050nm光照下表现出明显的光电响应，从而展现出其在可见至近红外波段具有宽谱响应特性。
如图5所示，为碲化锡薄膜/锗异质结光电探测器在无光照和波长为850nm光照下的Log J-V特性曲线，在无光照的条件下，所制备的异质结结在-0.5-0.5v较小的偏压下，具有很好的结特性；在光功率密度为10.77mW/cm2的850nm光照下，具有明显的光电响应，其开路电压为0.05v；并且其具有高的响应率为687.69mA/W(在-0.5v下)和探测率2.34×1011cmHz1/2w-1(在0偏压下)。
Claims (3)
1.碲化锡薄膜/锗异质结光电探测器，其特征在于所述探测器锗为衬底，功能层为碲化锡薄膜，以碲化锡为靶材，采用射频磁控溅射法溅射于衬底。
2.如权利要求1所述的碲化锡薄膜/锗异质结光电探测器，其特征在于其特征在于该探测器从下至上分别为锗衬底、碲化锡薄膜层和铝电极层；
所述碲化锡薄膜上采用“回”字型Al电极形状，“回”字型Al电极中心为入射光入射区域，区域面积小于等于4mm2，锗衬底上采用方形Al电极。
3.碲化锡薄膜/锗异质结光电探测器，其特征在于制备步骤如下：
S1，锗衬底清洁；
S2，采用铝箔掩膜衬底四周；
S3,使用磁控溅射设备，采用射频模式，真空度≤8.5×10-5Pa，Ar2流量保持在80sccm，碲化锡靶材溅射功率设置为40-80W，在已经预掩模过的锗衬底上溅射5-10s，得到碲化锡薄膜；
S4,金属Al电极的制备：制备好的碲化锡薄膜去除掩膜后，裁剪出“回”字型Al电极铝箔进行二次掩膜在碲化锡薄膜上，“回”字型Al电极中心暴露出来的区域作为有效光敏面暴露在Al电极上，在锗衬底上则采用方块形Al电极。
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