JPS5948933A - 半導体不揮発性記憶装置の検査方法 - Google Patents
半導体不揮発性記憶装置の検査方法Info
- Publication number
- JPS5948933A JPS5948933A JP57159232A JP15923282A JPS5948933A JP S5948933 A JPS5948933 A JP S5948933A JP 57159232 A JP57159232 A JP 57159232A JP 15923282 A JP15923282 A JP 15923282A JP S5948933 A JPS5948933 A JP S5948933A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- chip
- floating
- memory
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 11
- 230000015654 memory Effects 0.000 title abstract description 12
- 238000012360 testing method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000032683 aging Effects 0.000 abstract description 5
- 230000008646 thermal stress Effects 0.000 abstract description 2
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008642 heat stress Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- -1 ion Metal Oxide Chemical class 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004793 poor memory Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
Landscapes
- Non-Volatile Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57159232A JPS5948933A (ja) | 1982-09-13 | 1982-09-13 | 半導体不揮発性記憶装置の検査方法 |
| US06/530,667 US4607219A (en) | 1982-09-13 | 1983-09-09 | Method of inspecting semiconductor non-volatile memory devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57159232A JPS5948933A (ja) | 1982-09-13 | 1982-09-13 | 半導体不揮発性記憶装置の検査方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5948933A true JPS5948933A (ja) | 1984-03-21 |
| JPS6229903B2 JPS6229903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-29 |
Family
ID=15689223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57159232A Granted JPS5948933A (ja) | 1982-09-13 | 1982-09-13 | 半導体不揮発性記憶装置の検査方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4607219A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| JP (1) | JPS5948933A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469394A (en) * | 1993-03-17 | 1995-11-21 | Fujitsu Limited | Nonvolatile semiconductor memory device having a status register and test method for the same |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719411A (en) * | 1985-05-13 | 1988-01-12 | California Institute Of Technology | Addressable test matrix for measuring analog transfer characteristics of test elements used for integrated process control and device evaluation |
| DE3931495C2 (de) * | 1989-09-21 | 1997-06-26 | Itt Ind Gmbh Deutsche | Verfahren zur "fließenden" Feinklassifizierung von Kapazitätsdioden |
| JPH0480939A (ja) * | 1990-07-24 | 1992-03-13 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPH0442402U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1990-08-10 | 1992-04-10 | ||
| US5219765A (en) * | 1990-09-12 | 1993-06-15 | Hitachi, Ltd. | Method for manufacturing a semiconductor device including wafer aging, probe inspection, and feeding back the results of the inspection to the device fabrication process |
| US5700698A (en) * | 1995-07-10 | 1997-12-23 | Advanced Micro Devices, Inc. | Method for screening non-volatile memory and programmable logic devices |
| JP3610887B2 (ja) * | 2000-07-03 | 2005-01-19 | 富士通株式会社 | ウエハレベル半導体装置の製造方法及び半導体装置 |
| ATE291220T1 (de) * | 2001-05-29 | 2005-04-15 | Em Microelectronic Marin Sa | Elektronische vorrichtung und verfahren zur temperaturüberwachung eines mediums |
| JP2006210718A (ja) * | 2005-01-28 | 2006-08-10 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| JP7199817B2 (ja) | 2018-03-16 | 2023-01-06 | 矢崎総業株式会社 | 電池パック |
| KR102574922B1 (ko) * | 2021-04-30 | 2023-09-06 | 넥스콘테크놀러지 주식회사 | 배터리 팩 및 이의 제조방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379259A (en) * | 1980-03-12 | 1983-04-05 | National Semiconductor Corporation | Process of performing burn-in and parallel functional testing of integrated circuit memories in an environmental chamber |
-
1982
- 1982-09-13 JP JP57159232A patent/JPS5948933A/ja active Granted
-
1983
- 1983-09-09 US US06/530,667 patent/US4607219A/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469394A (en) * | 1993-03-17 | 1995-11-21 | Fujitsu Limited | Nonvolatile semiconductor memory device having a status register and test method for the same |
| US5566386A (en) * | 1993-03-17 | 1996-10-15 | Fujitsu Limited | Nonvolatile semiconductor memory device having a status register and test method for the same |
| US5592427A (en) * | 1993-03-17 | 1997-01-07 | Fujitsu Limited | Semiconductor memory having a sense amplifier with load transistors having different load characteristics |
Also Published As
| Publication number | Publication date |
|---|---|
| US4607219A (en) | 1986-08-19 |
| JPS6229903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-29 |
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