JPS5948922A - 非晶質半導体 - Google Patents

非晶質半導体

Info

Publication number
JPS5948922A
JPS5948922A JP57159793A JP15979382A JPS5948922A JP S5948922 A JPS5948922 A JP S5948922A JP 57159793 A JP57159793 A JP 57159793A JP 15979382 A JP15979382 A JP 15979382A JP S5948922 A JPS5948922 A JP S5948922A
Authority
JP
Japan
Prior art keywords
atoms
amorphous semiconductor
dangling bonds
amorphous
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57159793A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376020B2 (cg-RX-API-DMAC10.html
Inventor
Yoshiyuki Uchida
内田　喜之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP57159793A priority Critical patent/JPS5948922A/ja
Publication of JPS5948922A publication Critical patent/JPS5948922A/ja
Publication of JPH0376020B2 publication Critical patent/JPH0376020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3408—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP57159793A 1982-09-14 1982-09-14 非晶質半導体 Granted JPS5948922A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57159793A JPS5948922A (ja) 1982-09-14 1982-09-14 非晶質半導体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57159793A JPS5948922A (ja) 1982-09-14 1982-09-14 非晶質半導体

Publications (2)

Publication Number Publication Date
JPS5948922A true JPS5948922A (ja) 1984-03-21
JPH0376020B2 JPH0376020B2 (cg-RX-API-DMAC10.html) 1991-12-04

Family

ID=15701384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57159793A Granted JPS5948922A (ja) 1982-09-14 1982-09-14 非晶質半導体

Country Status (1)

Country Link
JP (1) JPS5948922A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224322A (ja) * 1987-03-13 1988-09-19 Sanyo Electric Co Ltd 非晶質シリコンアロイ膜
US5371380A (en) * 1992-04-15 1994-12-06 Canon Kabushiki Kaisha Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511397A (en) * 1979-06-05 1980-01-26 Shunpei Yamazaki Semiconductor device with continuous connection and its production method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511397A (en) * 1979-06-05 1980-01-26 Shunpei Yamazaki Semiconductor device with continuous connection and its production method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224322A (ja) * 1987-03-13 1988-09-19 Sanyo Electric Co Ltd 非晶質シリコンアロイ膜
US5371380A (en) * 1992-04-15 1994-12-06 Canon Kabushiki Kaisha Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法

Also Published As

Publication number Publication date
JPH0376020B2 (cg-RX-API-DMAC10.html) 1991-12-04

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