JPS5948788A - Formation of el panel - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION This ηG light relates to an E L pay le no 1 Jino method that makes it possible to form a J long-lasting M17a child and a back pocket.

Porridge 1 is a pasted 10] diagram showing the adventures of ToCL By Le.

Transparent glass M: The plate 1 is made of, for example, In2O, and has 17 strips of metal poles 2 patterned in the shape of a military pole of Shoshumoto, the first layer 3 of, for example, Y2O, etc., and a matrix of ZnS. (Actually Mn, the axis with the center of all light emission...7
A second insulating layer 5 made of 4, Y2O, etc. is sequentially formed, and on this second insulating layer 5, the
1) Place the foam sink 2 so that it is at right angles to the book Ichiboshi.
The analogy that was buttered by Fumiko Tonzu of 1ff is A.
The backward analogue 6 consisting of I etc. is in the form F1v and is broken.

Bunmei'fpo 1ri 2 and one-sided bomb arrow 6, 9 pieces]
A connecting terminal 7 is formed of Ni or the like on the terminal part V (-kj) of the V-kj for connection with a cable (not shown).

However, the shape of the back side of the stool rice 6 and the connecting terminal 7 is
) method &''I layer AJ on the layer of second insulating layer 5, and then apply the turning layer to the nuclear material by etching method, then transparent layer 1 to 2. And, Ni was applied to the terminals of the ``front surface'' part 6, and buttering was carried out using the etching method so that Ni remained only in the terminal parts of the 1st and 2nd part of Shomyeongtun and the terminal part of the back part 4!6. Teizoko.

Unfortunately, the etching solution for Al and Ni is acidic, and the old material of the first and second insulating layers 3 and 5, Y2O,
etc. were susceptible to RJ and had the disadvantage that the insulating layer was corroded. As a measure to solve this drawback, on the back side (the electrode element of the m electrode 6 and [)i′I
A lift-off method is used in which a resist pattern is formed that is opposite to the pattern of the electrode bits in KISHOMEI'SHIN 1 绿2, AJ and Ni are evaporated, and Al and Ni on the resist are peeled off with acetone or the like. There is a buttering method, but when soldering, lj:
It is necessary to make the Ni film thickness 1000λ or more, but there is a drawback that increasing the Ni film thickness makes it difficult to perform lift-off due to the ductility of Ni/C.

Although Ni has a fairly strong adhesion force to In2O5, it has the drawback that AlzOs and the like are formed on the next surface of Al because Al tends to phlegm, resulting in a weak adhesion force to AJ. , Therefore, when soldering A
The drawback was that the Ni peeled off from the JIW, making it impossible to solder.

In addition, after forming '11: child 7 on the back side'-(side 6 and connection'), the insulation layer 1.
It is sealed with a sealing plate 8 having a recess i'i1(?l-) on the ζ side, and moisture-proof oil 9 is applied to the γ-thickness.

This invention was made to eliminate these drawbacks.
(i) In addition to the connection terminals and rear chamber (ㅅ-type hV), which can facilitate soldering and simplify the manufacturing process, it also has a matrix ηhub-type liquid crystal display. E that can be used for the 11th +1J configuration of flat spring 1fr, N electrochromic display panel
DESCRIPTION OF THE PREFERRED EMBODIMENTS The object of the present invention is to provide a method for forming an EL panel according to the present invention.A practical example of a method for forming an EL panel according to the present invention will be described below with reference to the drawings.

Figure 2 (a) shows the fruit / 1Ill.
A. It is a side view of 1 inch, 1 inch, and in both Figure 2 (a) and Figure 2 (13), the same parts as in Figure 1 are marked with Q1 and ν top. Make it. transparent noj
On the lath end plate 1-1-, for example, a transparent layer tp/C 2a, which is made of In2O5, is formed, and the area assigned to the connection y11d of the second layer 2a of this dirty layer 2a is formed. A connecting terminal layer 7b made of nickel K7C and Ni (Cu) is formed.The thickness of the connecting terminal layer 7b is 1 (10
Set it to 0λ or more.

After forming the transparent electrode layer 2a and the connecting terminal layer 7b, as shown in FIG.
Buttering is done using an etching method so that only the edges remain. At this time, the connection terminals 7c and 7d of the electrodes are taken out alternately from top to bottom or left and right, and the pitch of the connection terminals 7 is made larger than the pitch of the electrodes to facilitate the connection.

Even if the etching is 1 inch, it is In203i,
When Nitaba Cu is used for the connection terminal 7, use Li'e Cl 3 and HCl as an etching solution at a volume of 1°1 (if I is used, heat it to 40°C; in 1 to 4 minutes). Then, etching In, 0. and Ni/Cu at the same time.

That is, the skillful construction 2 and the compression work. , 4 children 7 (゛Rnost a Yui 1) - Shih Bu] Ko → Present Kan → Etching 3.
% - patterning in one time)N. In Figure 413, the lower layer of 1ξ alligator handle 7ct and 7d is In2O.
, remains, and Ni-Yota Cu is strongly attached 7M L,
ing,.

When the transparent electrode +Ji2 and the connection terminal 7 are patterned, the 10th loquat layer 3 and ef="l" are formed as shown in FIG.
t, layer 4 and second insulating layer 5 are sequentially formed. After forming the second insulating layer 5, the back surface 'Ljf 4' is formed using a resist.
A 5-momme pattern with A<6 is buttered, AJ is removed, and a so-called lift-off method is used to remove the resist to form a back 6-stop 6 consisting of several electron beams.

At this time, the terminal portion of the back support 6 is formed so as to partially engage with the connection terminal 7d of the back electrode 6, as shown in FIG.
The back side image 6 and the contact c4 child 7d should be in the same position.

In addition, in Fig. 4, Chiko 16-
″14, the first loquat 1 eido 1 kyō 3 are stacked.

As explained above, in the first example, the patterning of the contact (double terminal 7) is done by the etching method.
Also, ψJ: The total thickness of the Cu t film can be increased, and lr
Since patterning is performed using the lint-off method, the insulating layer and the light-emitting layer will not be soaked in by the etching solution, and Since only Al is patterned, there is an advantage that lift-off is easy.

The first M+i example, in which Al was vaporized over Nit or Cu, has a strong binding force for Al 171', I n203, but a strong binding force for Ni- or Co. Therefore, as shown in Fig. 5, when patterning the connection ψ1 of the connection 7d with the back surface Ils;<6, the connection terminal 7d
Etching is carried out so that the vapor deposition molding 11 consisting of In and 03 remains, and when the back electrode 0 is formed, AJ is placed on the fish core terminal 11, which has the advantage that some strong metals can be killed.

Next, when patterning the back side terminal 6 and the connection terminal 7, a position 1 position mark is provided in order to accurately and easily match the mask. t and -C are also good, but since they are transparent, I used the easy-to-see lunate and had a process of IJ sawing and alignment mark formation. >Ni during patterning of iM child 7
Forming the alignment mark 12 with -, 4 or Cu has the advantage that one manufacturing process can be reduced.

As described above, the method for forming the E L panel of the present invention involves patterning several elec- trons of the core of the Shomei den and the connecting terminals of the ``im453'' on the back side. To solder C1 to the 81 area 1 skin, use a material that can be used to make the shape 1 & 2 to the specified thickness, pattern the sli meishin 1 ric and the connection terminal at the same time using the etching method, and pattern the back surface using the lift-off method. Therefore, Jl: k
It has the advantage that the stress decay thickness of the QW child layer can be increased, that it can be avoided during the manufacturing process, and that it can be easily mounted.

- It is 41 to 41 in the matrix-type liquid crystal display panel or electrochromic display panel.
” Effects that can be used or served.

[Brief explanation of drawings]

No. 11 (cross-sectional view of IF rice EL panel, No. 21k (
a) is Hirata 1 section of Ichimi Tsumugi 0 of the EL bag forming method of this invention, FIG. 2(b,) is a side view thereof, and FIG. FIG. 4 is a diagram showing the formation of the back surface %m in the same EL panel formation method as above, and FIGS. 5 and 6 are explanatory diagrams of other embodiments of the EL panel formation method of the present invention, respectively. . 1...Glass-JJ8: plate, 2...Transparent electrode BB, 3
...First insulating layer, 4...Light emitting layer, 5...Second insulation layer, 6...Back type 1 porridge, 7, 7c, 7d...Connection terminal, 7b...Connection end iko no 9 no. Patent applicant Oki Electric Industry Co., Ltd. Figure 1 Figure 2■ Figure 3・Figure 1 c 2 Figure 5Figure 6-57・

Claims (1)

[Claims] A transparent mold 4 layer is formed on the transparent glass surface, and a connection terminal layer made of a material that can be stamped is formed only on the connection YIM part of this transparent layer 17. , tνλ! by etching method. 14 ft of book = transparent conductor t+ consisting of a child and connection terminal and back electrode of this Shomei Dento W: ia
Buttering is done so that only the seeds remain, and the transparent
Sequentially remove the first insulating layer, the first insulating layer, and the second insulating layer 4 on Tagami only, and partially engage the connecting terminal of the previous 6 Iff poles. A method for forming an EL panel by forming a back surface consisting of several beams by a lift-off method.