JPH0533511B2 - - Google Patents

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Publication number
JPH0533511B2
JPH0533511B2 JP59156941A JP15694184A JPH0533511B2 JP H0533511 B2 JPH0533511 B2 JP H0533511B2 JP 59156941 A JP59156941 A JP 59156941A JP 15694184 A JP15694184 A JP 15694184A JP H0533511 B2 JPH0533511 B2 JP H0533511B2
Authority
JP
Japan
Prior art keywords
thin film
transparent electrode
glass substrate
lead
back electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59156941A
Other languages
Japanese (ja)
Other versions
JPS6134889A (en
Inventor
Yasuo Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Nippon Electric Co Ltd
Original Assignee
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Nippon Electric Co Ltd filed Critical Kansai Nippon Electric Co Ltd
Priority to JP15694184A priority Critical patent/JPS6134889A/en
Publication of JPS6134889A publication Critical patent/JPS6134889A/en
Publication of JPH0533511B2 publication Critical patent/JPH0533511B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 産業上の利用分野 この発明は薄膜ELパネル、特にOA機器の端末
デイスプレイとして好適する薄膜ELマトリツク
スパネルの透明電極および背面電極の導出部の構
造に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a thin film EL panel, and particularly to a structure of a lead-out portion of a transparent electrode and a back electrode of a thin film EL matrix panel suitable as a terminal display of OA equipment.

従来の技術 従来、交流動作の薄膜EL素子に関して、発光
層に規則的に高い電界(106V/cm程度)を印加
し、絶縁耐圧、発光効率及び動作の安定性等を高
めるために、0.1〜1.0wt%のMn(あるいはCu,
Al等、Br等)をドーブしたZnS,ZnSe等の半導
体発光層をY2O3,Ta2O5等の誘電体薄膜でサン
ドイツチした三層構造ZnS:Mn(又はZnSe:
Mn)EL素子が開発され、発光諸特性の向上が確
かめられている。この薄膜EL素子は数KHzの交
流電界印加によつて高輝度発光し、しかも長寿命
であるという特徴を有している。
Conventional technology Conventionally, for AC-operated thin-film EL devices, a high electric field (about 10 6 V/cm) is regularly applied to the light emitting layer, and in order to improve dielectric strength, luminous efficiency, stability of operation, etc. ~1.0wt% Mn (or Cu,
A three-layer structure ZnS : Mn ( or ZnSe:
Mn) EL devices have been developed, and improvements in various light-emitting properties have been confirmed. This thin-film EL element emits high-intensity light when an alternating current electric field of several KHz is applied, and has a long lifespan.

薄膜EL素子の1例としてZnS:Mn薄膜EL素
子の基本的構造を第7図に示す。
FIG. 7 shows the basic structure of a ZnS:Mn thin film EL device as an example of a thin film EL device.

第7図に基づいて薄膜EL素子の構造を具体的
に説明すると、硬質かつ透明の前面ガラス基板1
上にIn2O3,SnO2等の透明電極2、更にその上に
積層してY2O3,Ta2O5,Al2O3,Si2N4,SiO2
からなる第1の誘電体層3がスパツタあるいは電
子ビーム蒸着法等により形成されている。第1の
誘電体層3上にはZnS:Mn焼結ペレツトを電子
ビーム蒸着することにより得られるZnS発光層4
が形成されている。この時蒸着用のZnS:Mn焼
結ペレツトには活性物質となるMnが目的に応じ
た濃度に設定されたペレツトが使用される。ZnS
発光層4上には第1の誘電体層3と同様の材質か
ら成る誘電体層5が積層され、更にその上にAl
等から成る背面電極6が蒸着形成されている。透
明電極2と背面電極6は第8図に示すように帯状
に成形され、互いに直交する如く複数本配列され
たマトリツクス電極構造が採用されており、透明
電極2と背面電極6が平面図的に見て交叉した位
置7(図示斜線部分)がパネルの1画素に相当す
る。透明電極2と背面電極6はそれぞれスイツチ
8,9を介して交流電源10に接続され、薄膜
EL素子が駆動される。
To specifically explain the structure of the thin film EL element based on FIG. 7, the hard and transparent front glass substrate 1
A transparent electrode 2 made of In 2 O 3 , SnO 2 or the like is placed on top, and a first layer made of Y 2 O 3 , Ta 2 O 5 , Al 2 O 3 , Si 2 N 4 , SiO 2 etc. is layered on top of the transparent electrode 2 . The dielectric layer 3 is formed by sputtering, electron beam evaporation, or the like. On the first dielectric layer 3 is a ZnS luminescent layer 4 obtained by electron beam evaporation of ZnS:Mn sintered pellets.
is formed. At this time, the ZnS:Mn sintered pellets used for deposition are pellets in which the concentration of Mn, which is an active substance, is set to suit the purpose. ZnS
A dielectric layer 5 made of the same material as the first dielectric layer 3 is laminated on the light emitting layer 4, and further layered with Al.
A back electrode 6 is formed by vapor deposition. The transparent electrode 2 and the back electrode 6 are formed into a strip shape as shown in FIG. 8, and a matrix electrode structure is adopted in which a plurality of electrodes are arranged perpendicularly to each other. The intersection position 7 (hatched area in the figure) corresponds to one pixel on the panel. The transparent electrode 2 and the back electrode 6 are connected to an AC power source 10 via switches 8 and 9, respectively, and the thin film
The EL element is driven.

上記の構成において、スイツチ8,9を閉じて
電極2,6間にAC電圧を印加すると、ZnS発光
層4の両側の誘電体層3,5間に上記AC電圧が
誘起されることになり、従つてZnS発光層4内に
発生した電界によつて伝導体に励起され、かつ加
速されて充分なエネルギーを得た電子が、直接
Mn発光センターを励起し、励起されたMn発光
センターが基底状態に戻る際に橙黄色の発光を行
う。即ち高電界で加速された電子がZnSと発光層
4中の発光センターであるZnサイトに入つたMn
原子の電子を励起し、基底状態に落ちる時、ほぼ
5850Åをピークに幅広い波長領域で強い発光を呈
する。
In the above configuration, when the switches 8 and 9 are closed and an AC voltage is applied between the electrodes 2 and 6, the AC voltage is induced between the dielectric layers 3 and 5 on both sides of the ZnS light emitting layer 4. Therefore, electrons excited in the conductor by the electric field generated in the ZnS light emitting layer 4 and accelerated to obtain sufficient energy can be directly
The Mn luminescence center is excited, and when the excited Mn luminescence center returns to the ground state, it emits orange-yellow light. In other words, electrons accelerated by a high electric field enter ZnS and the Zn site which is the luminescent center in the luminescent layer 4.
When an atom's electrons are excited and fall to the ground state, approximately
It emits strong light in a wide wavelength range with a peak of 5850 Å.

上記の如き構造を有する薄膜EL素子はスペー
スフアクタの利点を生かした平面薄型デイスプレ
イ・デバイスとして、文字及び図形を含むコンピ
ユーターの出力表示端末機器その他種々の表示装
置に文字、記号、静止画像、動画像等の表示手段
として利用することができ非常に有効なものであ
る。
The thin film EL element having the structure described above can be used as a flat thin display device that takes advantage of the space factor to display characters, symbols, still images, moving images, etc. It can be used as a means of displaying images, etc., and is very effective.

しかしながら薄膜EL素子の誘電体層は製造工
程途中で発生した多数のピンホールやマイクロラ
ツク等を含み、これらの欠陥を通してZnS発光層
4に湿気等が侵入するため、EL発光損失による
発熱、層間剥離、素子特性の劣化等を招来する。
However, the dielectric layer of a thin-film EL element contains many pinholes and microracks generated during the manufacturing process, and moisture, etc. enters the ZnS light emitting layer 4 through these defects, resulting in heat generation due to EL emission loss and delamination. , resulting in deterioration of device characteristics.

上記問題を解決することを目的として、第9図
に示すように、薄膜EL素子特有の不完全さ、即
ちピンホール等によつて通電時に生じるブレーク
ダウンのため起こる微小な熱損傷領域の拡大を防
止、固定化し、大気環境化で湿気保護、放熱効
果、さらに振動、たわみに対しても有効となる薄
膜ELパネル11が知られている。
In order to solve the above problem, as shown in Fig. 9, we investigated the expansion of the microscopic thermal damage area caused by the breakdown caused by pinholes, etc., which occur during energization. A thin film EL panel 11 is known that is effective against moisture protection, heat radiation, and vibration and deflection in an atmospheric environment.

この薄膜ELパネル11を第9図に基づいて説
明する。なお、第9図の左半分は透明電極2に平
行な方向の断面図を示し、右半分は透明電極2に
直交する方向の断面図を示す。1はガラス基板で
あり、ガスラ基板1上に透明電極2が帯状に一定
ピツチ間隔をもつて平行配列されて、その上に第
1の誘久体層3、発光層4、第2の誘電体層5、
背面電極6を積層形成した薄膜EL素子12が構
成されている。この薄膜EL素子12を収納する
如く皿状のカバーガラス13がガラス基板1上に
重畳され、その内部間隙に薄膜EL素子12が内
蔵される。ガラス基板1とカバーガラス13の接
合部はエポキシ樹脂、光硬化性樹脂(フオトボン
ド)等の接着剤14で密封されている。即ち、ガ
ラス基板1とカバーガラス13は薄膜EL12に
対する外囲器15を構成する。そして外囲器15
内には薄膜EL素子12が内蔵されると共にシリ
コンオイル、真空グリース等の薄膜EL素子12
の保護用の絶縁性保護流体16が充填封入されて
いる。絶縁性保護流体16に要求される条件とし
てはピンホールへの浸透性があり、絶縁耐圧が高
く、耐熱性、耐湿性に優れ、薄膜EL素子12の
構成膜と反応せず、蒸気圧、熱膨張係数の小さい
流動性物質であることが望ましいが特にピンホー
ルへの浸透性があり絶縁耐圧がある程度高いこと
及び薄膜EL素子構成膜と反応しないことを要す
る。
This thin film EL panel 11 will be explained based on FIG. 9. Note that the left half of FIG. 9 shows a cross-sectional view in a direction parallel to the transparent electrode 2, and the right half shows a cross-sectional view in a direction perpendicular to the transparent electrode 2. Reference numeral 1 denotes a glass substrate, on which transparent electrodes 2 are arranged parallel to each other in a strip shape at a constant pitch, and on top of which a first dielectric layer 3, a light emitting layer 4, and a second dielectric layer are arranged. layer 5,
A thin film EL element 12 is constructed in which a back electrode 6 is laminated. A dish-shaped cover glass 13 is superimposed on the glass substrate 1 so as to accommodate the thin film EL element 12, and the thin film EL element 12 is built into the internal gap thereof. The joint between the glass substrate 1 and the cover glass 13 is sealed with an adhesive 14 such as epoxy resin or photocurable resin (Photobond). That is, the glass substrate 1 and the cover glass 13 constitute an envelope 15 for the thin film EL 12. and envelope 15
A thin film EL element 12 is built inside, and the thin film EL element 12 is coated with silicone oil, vacuum grease, etc.
An insulating protective fluid 16 for protection is filled and sealed. The conditions required for the insulating protective fluid 16 include permeability into pinholes, high dielectric strength, excellent heat resistance and moisture resistance, no reaction with the constituent films of the thin film EL element 12, and low vapor pressure and heat resistance. It is desirable that the material be a fluid substance with a small expansion coefficient, but it is particularly required that it has permeability into pinholes, has a somewhat high dielectric strength voltage, and does not react with the films constituting the thin-film EL element.

この絶縁性保護流体16はカバーガラス13に
設けられている注入孔17から注入され、この注
入孔17は樹脂18で封止するか(特開昭54−
122990号公報)、ガラス蓋板を接着剤で接着して
封止する(特開昭52−127790号公報)。
This insulating protective fluid 16 is injected from an injection hole 17 provided in the cover glass 13, and this injection hole 17 is sealed with a resin 18 (Japanese Patent Application Laid-Open No.
122990), and a glass lid plate is bonded and sealed with an adhesive (Japanese Patent Application Laid-open No. 127790/1983).

また、透明電極2や背面電極6に外部駆動回路
を接続する場合、これらの電極上に直接フレキシ
ブルリードを半田付けすることができないので、
透明電極2や背面電極6の端部に一部が重畳され
るように、AlとNiの二層膜よりなる電極端子を
形成し、この電極端子にフレキシブルリードを半
田付けするようにしている(特開昭57−89481号
公報、特開昭59−27497号公報)。
Furthermore, when connecting an external drive circuit to the transparent electrode 2 or the back electrode 6, it is not possible to solder flexible leads directly onto these electrodes.
An electrode terminal made of a two-layer film of Al and Ni is formed so as to partially overlap the ends of the transparent electrode 2 and the back electrode 6, and a flexible lead is soldered to this electrode terminal ( JP-A-57-89481, JP-A-59-27497).

発明が解決しようとする問題点 ところが、上記のように、Alよりなる背面電
極6をそのまゝガラス基板1とカバーガラス13
の界面を通つて外部に導出すると、Alのガラス
基板1に対する密着力が小さいために、カバーガ
ラス13の接着剤14の硬化時の体積収縮に伴う
応力等によつて、背面電極6がガラス基板1から
剥離、断線しやすく、信頼性に問題があつた。
Problems to be Solved by the Invention However, as described above, the back electrode 6 made of Al is directly connected to the glass substrate 1 and the cover glass 13.
When the adhesive 14 of the cover glass 13 is hardened, the stress caused by the volumetric contraction of the adhesive 14 of the cover glass 13 causes the back electrode 6 to bond to the glass substrate 1. 1, it was easy to peel off and break, and there were problems with reliability.

問題点を解決するための手段 この発明はガスラ基板とカバーガラスの固着部
でガラス基板とカバーガラスとで挟着される透明
電極および背面電極の導出部を、透明電極と同一
材料で形成したことを特徴とするものである。
Means for Solving the Problems The present invention is characterized in that the transparent electrode and the lead-out portion of the back electrode, which are sandwiched between the glass substrate and the cover glass at the fixed portion between the glass substrate and the cover glass, are formed of the same material as the transparent electrode. It is characterized by:

作 用 上記の手段によれば、透明電極が背面電極に比
較してガラス基板に対する密着力が格段に大きい
ことを利用して、透明電極および背面電極の導出
部のガラス基板に対する密着力が著しく大にな
り、カバーガラスをガラス基板に密着する際に、
接着剤の硬化時を体積収縮に伴う応力等によつ
て、導出部が剥離、断線することがなくなり、信
頼性の高い薄膜ELパネルを提供することができ
る。
Effect: According to the above means, by utilizing the fact that the transparent electrode has a much greater adhesion force to the glass substrate than the back electrode, the adhesion force of the transparent electrode and the lead-out portion of the back electrode to the glass substrate is significantly increased. When attaching the cover glass to the glass substrate,
The lead-out portion is not peeled off or disconnected due to stress due to volumetric shrinkage during curing of the adhesive, and a highly reliable thin-film EL panel can be provided.

実施例 第1図はこの発明の一実施例の薄膜ELパネル
19の断面図で、同図左半分は透明電極2に平行
な方向の断面を示し、右半分は透明電極2に直角
な方向の断面を示す。図において、次の点を除い
ては第9図と同様であるため、同一部分には同一
参照符号を付している。第9図と相違する点は、
透明電極2と背面電極6の、各ガラス基板1とカ
バーガラス13の界面を通つて外部へ導出する導
出部20,21が、透明電極2側の導出部20は
透明電極2をそのまゝ導出しているのに対して、
背面電極6側の導出部21は、透明電極2と同一
材料で形成し、この導出部21の内方端上に、背
面電極6の一端を重ね合せて形成していることで
ある。なお、22,23は薄膜ELパネル19を
駆動回路に接続するためのフレキシブルリード
(図示せず)を半田付けするための端子部で、そ
れぞれ例えばTi層24,Al層25,Ni層26等
を積層して形成されている。
Embodiment FIG. 1 is a cross-sectional view of a thin film EL panel 19 according to an embodiment of the present invention. The left half of the figure shows a cross section parallel to the transparent electrode 2, and the right half shows a cross section perpendicular to the transparent electrode 2. A cross section is shown. The figure is the same as FIG. 9 except for the following points, so the same parts are given the same reference numerals. The difference from Figure 9 is that
The lead-out parts 20 and 21 lead out the transparent electrode 2 and the back electrode 6 to the outside through the interface between each glass substrate 1 and the cover glass 13, and the lead-out part 20 on the transparent electrode 2 side leads out the transparent electrode 2 as it is. Whereas,
The lead-out portion 21 on the side of the back electrode 6 is formed of the same material as the transparent electrode 2, and one end of the back electrode 6 is formed over the inner end of the lead-out portion 21. Note that 22 and 23 are terminal parts for soldering flexible leads (not shown) for connecting the thin film EL panel 19 to the drive circuit, and are made of, for example, a Ti layer 24, an Al layer 25, a Ni layer 26, etc., respectively. It is formed by laminating layers.

第2図ないし第6図は、上記薄膜ELパネル1
9の製造方法について説明するための、各段階の
要部平面図を示し、以下第2図ないし第6図を参
照して説明する。
Figures 2 to 6 show the above thin film EL panel 1.
In order to explain the manufacturing method of No. 9, principal part plan views of each stage are shown, and the description will be made below with reference to FIGS. 2 to 6.

まず、ガラス基板1を用意し、その上に従来と
同様にIn2O3,SnO2等を全面に形成して、フオト
エツチング等によりパターニングして透明電極2
およびその導出部20を形成するとともに、背面
電極6を形成する位置の延長線上に背面電極6の
導出部21を形成する(第2図)。
First, a glass substrate 1 is prepared, and In 2 O 3 , SnO 2 , etc. are formed on the entire surface in the same manner as in the past, and transparent electrodes 2 are formed by patterning by photo etching or the like.
In addition to forming the lead-out portion 20 thereof, the lead-out portion 21 of the back electrode 6 is formed on an extension line of the position where the back electrode 6 is formed (FIG. 2).

次に、前記各導出部20,21の外方端に一部
重畳するように、例えばTi層24,Al層25,
Ni層26を積層して、フレキシブルリード接続
用の端子部22,23を形成する(第3図)。
Next, for example, Ti layer 24, Al layer 25,
A Ni layer 26 is laminated to form terminal portions 22 and 23 for flexible lead connection (FIG. 3).

続いて、透明電極2上に、第1の誘電体層3、
発光層4、第2の誘電体層5を順次積層して形成
する(第4図)。
Subsequently, on the transparent electrode 2, a first dielectric layer 3,
A light-emitting layer 4 and a second dielectric layer 5 are sequentially laminated (FIG. 4).

次に、第2の誘電体層5の上にAl蒸着により
背面電極6を、前記透明電極2と直交する方向
で、かつその一端が前記背面電極6用の導出部2
1に重畳するように形成して薄膜EL素子12を
作成する(第5図)。
Next, a back electrode 6 is formed on the second dielectric layer 5 by Al evaporation in a direction perpendicular to the transparent electrode 2, and one end thereof is connected to the lead-out portion 2 for the back electrode 6.
1 to form a thin film EL element 12 (FIG. 5).

次に、上記薄膜EL素子12を覆うように、カ
バーガラス13を被せ、接着剤14でガラス基板
1に接着固定して外囲器15を形成する。このと
き接着剤14が体積収縮しても、導出部20,2
1のガラス基板1に対する密着力が大きいので、
導出部20,21がガラス基板1から剥離するこ
とはない。こののち、外囲器15内に注入孔17
(図示せず。第1図参照)から絶縁性保護流体1
6を充填し、注入孔17を従来と同様に樹脂18
等で封止して、薄膜ELパネル19を完成する
(第6図)。
Next, a cover glass 13 is placed over the thin film EL element 12 and fixed to the glass substrate 1 with an adhesive 14 to form an envelope 15. At this time, even if the adhesive 14 shrinks in volume, the lead-out portions 20, 2
Since the adhesion force of 1 to the glass substrate 1 is large,
The lead-out portions 20 and 21 will not peel off from the glass substrate 1. After this, the injection hole 17 is inserted into the envelope 15.
(not shown, see Figure 1) to insulating protective fluid 1
6 and fill the injection hole 17 with resin 18 as before.
etc. to complete the thin film EL panel 19 (FIG. 6).

その後、透明電極2および背面電極6の端子部
22,23に半田を介してフレキシブルリード
(図示せず)を接続する。
After that, flexible leads (not shown) are connected to the terminal portions 22 and 23 of the transparent electrode 2 and the back electrode 6 via solder.

発明の効果 この発明は以上のように、透明電極および背面
電極の各ガラス基板とカバーガラスとの界面を通
る導出部を、Alよりもガラス基板に対して密着
力が格段に大きい透明電極と同一材料で形成した
ので、ガハーガラスをガラス基板に接着する接着
剤の硬化時の体積収縮による応力で導出部が剥
離、断線することがなく、信頼性の高い薄膜EL
パネルを提供することができる。また、導出部は
透明電極のパターニング時に同時に形成できるの
で、特別の資材や工数を必要としない。
Effects of the Invention As described above, this invention makes the lead-out portions of the transparent electrode and the back electrode that pass through the interface between each glass substrate and the cover glass identical to that of the transparent electrode, which has much greater adhesion to the glass substrate than Al. Since it is made of a thin film EL material, the lead-out part will not peel off or break due to stress caused by volume shrinkage when the adhesive that bonds Gahar glass to the glass substrate hardens, making it a highly reliable thin film EL.
panels can be provided. Further, since the lead-out portion can be formed at the same time as the transparent electrode is patterned, special materials and man-hours are not required.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例の薄膜ELパネル
の断面図で、左半分は透明電極に平行な方向の断
面図を示し、右半分は透明電極に直角な方向の断
面図を示す。第2図ないし第6図は上記薄膜EL
パネルの製造方法について説明するための各段階
の要部平面図で、第2図は透明電極および導出部
形成後、第3図は端子部形成後、第4図は第1の
誘電体層、発光層および第2の誘電体層形成後、
第5図は背面電極形成後、第6図はカバーガラス
接着後の状態を示す。第7図は薄膜EL素子の断
面図、第8図は透明電極および背面電極の関係を
示す要部平面図、第9図は薄膜ELパネルの断面
図で、左半分は透明電極に平行な方向の断面図を
示し、右半分は透明電極に直角な方向の断面図を
示す。 1……ガラス基板、2……透明電極、3……第
1の誘電体層、4……発光層、5……第2の誘電
体層、6……背面電極、12……薄膜EL素子、
13……カバーガラス、14……接着剤、15…
…外囲器、16……絶縁性保護流体、19……薄
膜ELパネル、20,21……導出部。
FIG. 1 is a sectional view of a thin film EL panel according to an embodiment of the present invention, in which the left half shows a sectional view parallel to the transparent electrode, and the right half shows a sectional view perpendicular to the transparent electrode. Figures 2 to 6 show the above thin film EL.
FIG. 2 is a plan view of main parts at each stage for explaining the method of manufacturing a panel, FIG. 2 is after forming a transparent electrode and a lead-out portion, FIG. 3 is after forming a terminal portion, and FIG. 4 is after forming a first dielectric layer, After forming the light emitting layer and the second dielectric layer,
FIG. 5 shows the state after the back electrode is formed, and FIG. 6 shows the state after the cover glass is bonded. Figure 7 is a cross-sectional view of the thin film EL element, Figure 8 is a plan view of the main parts showing the relationship between the transparent electrode and the back electrode, and Figure 9 is a cross-sectional view of the thin film EL panel, with the left half in the direction parallel to the transparent electrode. The right half shows a cross-sectional view in the direction perpendicular to the transparent electrode. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... First dielectric layer, 4... Light emitting layer, 5... Second dielectric layer, 6... Back electrode, 12... Thin film EL element ,
13...Cover glass, 14...Adhesive, 15...
... Envelope, 16 ... Insulating protective fluid, 19 ... Thin film EL panel, 20, 21 ... Lead-out section.

Claims (1)

【特許請求の範囲】 1 ガラス基板に透明電極、第1の誘電体層、発
光層、第2の誘電体層、背面電極を順次積層した
薄膜EL素子と、 前記薄膜EL素子を覆つてガラス基板に固着さ
れたカバーガラスと、 前記ガラス基板とカバーガラスの固着部を通つ
て外部に導出された、前記透明電極および背面電
極の導出部とを有する薄膜ELパネルにおいて、 前記固着部のガラス基板とカバーガラスとで挟
着される前記導出部を透明電極と同一材料で形成
したことを特徴とする薄膜ELパネル。
[Scope of Claims] 1. A thin film EL device in which a transparent electrode, a first dielectric layer, a light emitting layer, a second dielectric layer, and a back electrode are sequentially laminated on a glass substrate, and a glass substrate covering the thin film EL device. A thin film EL panel having a cover glass fixed to the glass substrate, and a lead-out part for the transparent electrode and the back electrode led out to the outside through the fixed part of the glass substrate and the cover glass, the glass substrate of the fixed part and A thin film EL panel characterized in that the lead-out portion sandwiched between the cover glass and the transparent electrode is made of the same material as the transparent electrode.
JP15694184A 1984-07-26 1984-07-26 Thin film el panel Granted JPS6134889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15694184A JPS6134889A (en) 1984-07-26 1984-07-26 Thin film el panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15694184A JPS6134889A (en) 1984-07-26 1984-07-26 Thin film el panel

Publications (2)

Publication Number Publication Date
JPS6134889A JPS6134889A (en) 1986-02-19
JPH0533511B2 true JPH0533511B2 (en) 1993-05-19

Family

ID=15638691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15694184A Granted JPS6134889A (en) 1984-07-26 1984-07-26 Thin film el panel

Country Status (1)

Country Link
JP (1) JPS6134889A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411601B2 (en) 2004-08-03 2008-08-12 Seiko Epson Corporation Exposure head
JP4508768B2 (en) * 2004-08-03 2010-07-21 セイコーエプソン株式会社 Exposure head and image forming apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948788A (en) * 1982-09-13 1984-03-21 沖電気工業株式会社 Formation of el panel
JPS60126687A (en) * 1983-12-14 1985-07-06 松下電器産業株式会社 Solid video display plate and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948788A (en) * 1982-09-13 1984-03-21 沖電気工業株式会社 Formation of el panel
JPS60126687A (en) * 1983-12-14 1985-07-06 松下電器産業株式会社 Solid video display plate and manufacture thereof

Also Published As

Publication number Publication date
JPS6134889A (en) 1986-02-19

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