JPS5885295A - Method of forming thin film el element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a thin film E, L* having a three-layer structure.

FIG. 1 is a perspective view showing the structure of a conventional thin-film EL device, which is a thin-film KL element in which a light-emitting layer made of ZnS as a matrix and whose emission center is made of a transition metal such as Mn or an element such as a rare earth is covered with an insulating layer. It shows.

As shown in FIG. 1, the conventional method for forming an EL element is to deposit a transparent conductive thin film, such as indium oxide, on a substrate 11 made of transparent glass, and then deposit a plurality of electrode elements. A first insulating layer 13 and a light-emitting layer 14 made of a material with a high dielectric constant, and an insulating layer wJ2 made of the same material as the first insulating layer 13 are formed by turning to form an electrode 12 of 9@i. forming layers 15 in sequence, depositing a thin film of a conductive material such as Ant on the surface of the second insulating layer 15;
A plurality of electrodes are turned by etching so as to be orthogonal to the electrode of the first electrode 12, and a second electrode is formed.
This is a method of forming the electrode 16.

However, the insulating layer 13 of @l and the second insulating layer 1
As the material for step 5, Y! Metal oxides such as 03 and I! are widely used. When turning /l of the electrode 16 of No. 2, the etching solution is applied! 7 @ 2.0 Even the insulating layer 15 or the first insulating layer 13 is corroded, and sufficient insulation cannot be achieved, and when a voltage is applied between the first electrode 12 and the electrode J6 of 1g2, dielectric breakdown occurs. It had the disadvantage of being easy.

Furthermore, a long period of water washing is required to remove the etching solution after etching.

For this reason, water permeates into the first insulating layer 13 and the second insulating layer 15 or the light emitting layer 14, making it difficult or difficult to completely remove the water, resulting in dielectric breakdown.

The present invention was made to eliminate the above-mentioned conventional drawbacks, and an object of the present invention is to provide a method for forming a thin film EL element that can form first and second insulating layers favorably.

Hereinafter, an embodiment of the method for forming a thin film EL element of the present invention will be described with reference to the drawings. FIGS. 2 and 3 are sectional views for explaining the steps of one embodiment, respectively.

In both FIG. 2 and FIG. 3, the same parts as in FIG. 1 will be described with the same reference numerals.

First, an I/C first electrode 12 is formed on the surface of a substrate 11 made of transparent glass or the like. When forming this first electrode 12,
Since it is produced by vapor deposition of a transparent conductive thin film such as indium oxide or by the step-by-step method, the substrate 11 will not be adversely affected even if the arm is turned by the etching method.

Also, l! The insulating layer 13 of 1, the optical layer 14, and the insulating layer 15 of @2 are sequentially formed as thin films of uniform thickness on the surface of the first electrode 12 by evaporation or the sintering method. therefore,
I of this invention! The method of forming the electrode 12, the first insulating layer 13, the light emitting layer 14, and the second insulating layer 15 may be the same as the conventional method.

However, when the second electrode 16 is patterned by etching, dielectric breakdown may occur as described above. Therefore, in this invention, /4' turning is performed by the lift-off method.

In FIG. 2, in the same manner as before, I! After forming the second insulating layer 15, a resist is applied to a uniform thickness on the surface of the second insulating layer 15, and after exposure, a convex resist 17 is formed as shown in FIG. do. The method for forming this convex resin 17 may be the same as the etching method.

As shown in FIG. 3, on the surface of the second insulating layer 15 on which the convex resist 17 is formed, a thin film 18 of conductive gold such as AI is deposited as a conductive material.

After depositing this metal thin film 18, when the resist 17 is removed using an organic solvent, the metal CSI s on the resist 17 is removed.
is also removed, leaving only the metal thin film 18B deposited on the surface of the second insulating layer 15, that is, the metal thin film 18B becomes the second electrode 16.

When connecting the EL = channel to the drive circuit, the first electrode 12
If we use IntOs or 5n(h as
Can't solder.

Further, the second electrode 16 can be easily deposited by a resistance wire heating method. Alternatively, if AA is used to reflect the light emitted from the light emitting layer 14 toward the substrate 1'l,
Similarly to the above, soldering becomes impossible. Therefore, to enable the connection method by soldering, #! Ni or Cu is vapor-deposited on the end of the first electrode 12 and the surface of the second electrode 15 to form a bonding portion.

FIG. 4 shows a thin film E formed according to another embodiment of the present invention.
FIG. In this other embodiment, the first electrode 12 is I! 2, and a part of the end portion is exposed.

Therefore, as shown in FIG. 4, in Ni or Cut:l) vapor deposition, a convex resist) 17 is formed on the part other than the @l electrode 12 and second electrode 16, and after Aj is vapor-deposited,
N1 or ti and cut are sequentially deposited, and then the resist 17 is removed using an organic solvent to remove the N1 or Cu deposited on the surface of the resist 17.
and the surface of the second insulating layer 15
and Ni or Cu remain, and O soldering to the first electrode 12 and the second electrode 16 becomes possible, which facilitates connection with a drive circuit.

As explained above, in the above embodiment, the @2 electrode 16
After forming a convex resos)'17, AI is deposited or AI! After the deposition of Ni or Cu, the resist 17 is removed using an organic solvent to perform Δ turning, so that the second insulating layer 15 is not deteriorated by the enchantment, and Because long-term washing with water is not required, dielectric breakdown is less likely to occur.

Furthermore, since Ushida attachment is possible at the end of the electrode,
There are advantages such as ease of connection with the drive circuit.

Furthermore, in the above embodiment, the convex resist 17 was formed by applying Resost on the entire surface and then developing it, but the convex ink was formed by printing on the surface of the second insulating layer 15, and after Al vapor deposition, the convex resist 17 was formed. The ink and the AI on the ink surface may be removed using an organic solvent.

As described above, according to the method for forming a thin film EL element of the present invention, renost is applied on the insulating layer of WJ2, exposed and developed, and a part of the second insulating layer is formed perpendicularly to the first electrode. A convex resist is formed so as to cover the resist, and a conductive material is deposited on the surface of the convex resist and the exposed portion of the second insulating layer.
Since the convex resist is removed using an organic solvent to form a second electrode that is I-leaned on multiple electrode elements, there is no need to use an etching solution for this/mother fern. Washing with water becomes unnecessary, and deterioration of the insulating layer can be prevented. Then good @l and second
An insulating layer can be formed.

[Brief explanation of drawings]

FIG. 1 is a perspective view of a general thin film EL device, FIGS. 2 and 3 are diagrams for explaining an embodiment of the method for forming a thin film EL element of the present invention, and FIG. 4 is a perspective view of a general thin film EL device. thin film E
FIG. 7 is a diagram for explaining another example of the method for forming an L element. 11... Substrate, 12... First electrode, 13... First
Insulating layer, 14... Light emitting layer, 15... Insulation j-116 of WJ2... Second electrode, 17... Convex lenost, 18, 18A. 18'B...Metal thin film patent applicant Oki Electric Industry Co., Ltd. Fang 41 Procedural amendment May 28, 1980 Commissioner of the Japan Patent Office 1) Haru Judono 1, Indication of the case 1982 Patent Application No. 182337 No. 2, Name of the invention Method for forming thin-film EL elements 3, Relationship with the case of the person making the amendment Patent Applicant (029) Oki Electric Industry Co., Ltd. 4, Agent 5, Date of amendment order Showa year, month, day (self-motivated) ) 6. Detailed description of the invention in the subject specification for amendment

Claims (1)

[Claims] With multiple transparent electrodes preloaded at equal pitch on a transparent substrate.
An insulating layer of @l, a light emitting layer and an I! layer are formed on the surface of the stripped first electrode. 2 insulating layers are sequentially formed, a resist is applied on the second insulating layer, and after exposure, it is developed to form a layer in a direction perpendicular to the electrode element of the first electrode and one part of the second insulating layer. After forming convex resists at regular intervals so as to cover the exposed portions of the second insulating layer and depositing a conductive material on the exposed portions of the second insulating layer, the convex resists are coated with an organic solvent. A method for forming a thin film EL device, comprising: forming a second electrode layer patterned into a plurality of electrode elements.