JPS5946074A - 半導体薄膜発光素子 - Google Patents
半導体薄膜発光素子Info
- Publication number
- JPS5946074A JPS5946074A JP57156112A JP15611282A JPS5946074A JP S5946074 A JPS5946074 A JP S5946074A JP 57156112 A JP57156112 A JP 57156112A JP 15611282 A JP15611282 A JP 15611282A JP S5946074 A JPS5946074 A JP S5946074A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- light emitting
- thin film
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
Landscapes
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156112A JPS5946074A (ja) | 1982-09-08 | 1982-09-08 | 半導体薄膜発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156112A JPS5946074A (ja) | 1982-09-08 | 1982-09-08 | 半導体薄膜発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5946074A true JPS5946074A (ja) | 1984-03-15 |
| JPS6328512B2 JPS6328512B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Family
ID=15620567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57156112A Granted JPS5946074A (ja) | 1982-09-08 | 1982-09-08 | 半導体薄膜発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946074A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6962524B2 (en) | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7137879B2 (en) | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7344432B2 (en) | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
-
1982
- 1982-09-08 JP JP57156112A patent/JPS5946074A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328512B2 (enrdf_load_stackoverflow) | 1988-06-08 |
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