JPS5941470A - 多室形薄膜作成装置 - Google Patents

多室形薄膜作成装置

Info

Publication number
JPS5941470A
JPS5941470A JP15240482A JP15240482A JPS5941470A JP S5941470 A JPS5941470 A JP S5941470A JP 15240482 A JP15240482 A JP 15240482A JP 15240482 A JP15240482 A JP 15240482A JP S5941470 A JPS5941470 A JP S5941470A
Authority
JP
Japan
Prior art keywords
chamber
film forming
substrate
air
chambers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15240482A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0246670B2 (enrdf_load_stackoverflow
Inventor
Tomitaro Koyama
小山　富太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP15240482A priority Critical patent/JPS5941470A/ja
Publication of JPS5941470A publication Critical patent/JPS5941470A/ja
Publication of JPH0246670B2 publication Critical patent/JPH0246670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP15240482A 1982-08-31 1982-08-31 多室形薄膜作成装置 Granted JPS5941470A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15240482A JPS5941470A (ja) 1982-08-31 1982-08-31 多室形薄膜作成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15240482A JPS5941470A (ja) 1982-08-31 1982-08-31 多室形薄膜作成装置

Publications (2)

Publication Number Publication Date
JPS5941470A true JPS5941470A (ja) 1984-03-07
JPH0246670B2 JPH0246670B2 (enrdf_load_stackoverflow) 1990-10-16

Family

ID=15539766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15240482A Granted JPS5941470A (ja) 1982-08-31 1982-08-31 多室形薄膜作成装置

Country Status (1)

Country Link
JP (1) JPS5941470A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132511A (ja) * 1984-07-25 1986-02-15 Toshiba Mach Co Ltd 気相成長などの処理装置
JPS61119400A (ja) * 1984-11-13 1986-06-06 Kobe Steel Ltd 密閉された作業空間内において被処理体を搬送する装置
JPS62104036A (ja) * 1985-10-31 1987-05-14 Nippon Tairan Kk 半導体処理装置
JPS62116769A (ja) * 1985-11-15 1987-05-28 Hitachi Electronics Eng Co Ltd Ｃｖｄ薄膜形成装置
JPS62133069A (ja) * 1985-12-03 1987-06-16 Hitachi Electronics Eng Co Ltd Ｃｖｄ薄膜形成装置およびｃｖｄ薄膜形成方法
FR2594102A1 (fr) * 1986-02-12 1987-08-14 Stein Heurtey Installation flexible automatisee de traitement thermochimique rapide
JPS62280368A (ja) * 1986-05-30 1987-12-05 Semiconductor Energy Lab Co Ltd 薄膜作製装置
JPS6328863A (ja) * 1986-07-22 1988-02-06 Ulvac Corp 真空処理装置
JPS6373363U (enrdf_load_stackoverflow) * 1986-10-31 1988-05-16
US5275709A (en) * 1991-11-07 1994-01-04 Leybold Aktiengesellschaft Apparatus for coating substrates, preferably flat, more or less plate-like substrates
US5591267A (en) * 1988-01-11 1997-01-07 Ohmi; Tadahiro Reduced pressure device
US5683072A (en) * 1988-11-01 1997-11-04 Tadahiro Ohmi Thin film forming equipment
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US5789086A (en) * 1990-03-05 1998-08-04 Ohmi; Tadahiro Stainless steel surface having passivation film
US5906688A (en) * 1989-01-11 1999-05-25 Ohmi; Tadahiro Method of forming a passivation film
JP2006339662A (ja) * 2006-06-14 2006-12-14 Hitachi Kokusai Electric Inc 半導体製造装置の障害対処システム
JP2010541237A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 原子層堆積による薄膜トランジスタの製造方法
CN102054910A (zh) * 2010-11-19 2011-05-11 理想能源设备有限公司 Led芯片工艺集成系统及其处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942423A (enrdf_load_stackoverflow) * 1972-05-04 1974-04-22
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942423A (enrdf_load_stackoverflow) * 1972-05-04 1974-04-22
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132511A (ja) * 1984-07-25 1986-02-15 Toshiba Mach Co Ltd 気相成長などの処理装置
JPS61119400A (ja) * 1984-11-13 1986-06-06 Kobe Steel Ltd 密閉された作業空間内において被処理体を搬送する装置
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JPS62104036A (ja) * 1985-10-31 1987-05-14 Nippon Tairan Kk 半導体処理装置
JPS62116769A (ja) * 1985-11-15 1987-05-28 Hitachi Electronics Eng Co Ltd Ｃｖｄ薄膜形成装置
JPS62133069A (ja) * 1985-12-03 1987-06-16 Hitachi Electronics Eng Co Ltd Ｃｖｄ薄膜形成装置およびｃｖｄ薄膜形成方法
FR2594102A1 (fr) * 1986-02-12 1987-08-14 Stein Heurtey Installation flexible automatisee de traitement thermochimique rapide
JPS62280368A (ja) * 1986-05-30 1987-12-05 Semiconductor Energy Lab Co Ltd 薄膜作製装置
JPS6328863A (ja) * 1986-07-22 1988-02-06 Ulvac Corp 真空処理装置
JPS6373363U (enrdf_load_stackoverflow) * 1986-10-31 1988-05-16
US5591267A (en) * 1988-01-11 1997-01-07 Ohmi; Tadahiro Reduced pressure device
US5683072A (en) * 1988-11-01 1997-11-04 Tadahiro Ohmi Thin film forming equipment
US6074538A (en) * 1988-11-01 2000-06-13 Tadahiro Ohmi Thin film forming equipment
US5906688A (en) * 1989-01-11 1999-05-25 Ohmi; Tadahiro Method of forming a passivation film
US5789086A (en) * 1990-03-05 1998-08-04 Ohmi; Tadahiro Stainless steel surface having passivation film
US5275709A (en) * 1991-11-07 1994-01-04 Leybold Aktiengesellschaft Apparatus for coating substrates, preferably flat, more or less plate-like substrates
JP2006339662A (ja) * 2006-06-14 2006-12-14 Hitachi Kokusai Electric Inc 半導体製造装置の障害対処システム
JP2010541237A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 原子層堆積による薄膜トランジスタの製造方法
CN102054910A (zh) * 2010-11-19 2011-05-11 理想能源设备有限公司 Led芯片工艺集成系统及其处理方法
WO2012065467A1 (zh) * 2010-11-19 2012-05-24 理想能源设备(上海)有限公司 Led芯片工艺集成系统及其处理方法

Also Published As

Publication number Publication date
JPH0246670B2 (enrdf_load_stackoverflow) 1990-10-16

Similar Documents

Publication Publication Date Title
JPS5941470A (ja) 多室形薄膜作成装置
US6338872B1 (en) Film forming method
US5016562A (en) Modular continuous vapor deposition system
US4995341A (en) Microwave plasma CVD apparatus for the formation of a large-area functional deposited film
WO2012031962A1 (en) Method and system for depositing a thin-film transistor
CN101245449A (zh) 大批量生产薄膜的等离子箱
US5908565A (en) Line plasma vapor phase deposition apparatus and method
CN101245448A (zh) 单室等离子箱制作薄膜硅光电转换器件的方法
JPS6257270B2 (enrdf_load_stackoverflow)
JP3079830B2 (ja) 薄膜光電素子の製造方法および製造装置ならびにプラズマｃｖｄ法およびプラズマｃｖｄ装置
US6877458B2 (en) Apparatus for forming deposited film
KR20230158591A (ko) 수소 라디칼 전처리를 통한 향상된 산화
JPH08195348A (ja) 半導体装置製造装置
JPH0436452B2 (enrdf_load_stackoverflow)
WO2019227192A1 (ru) Технологический реактор для плазмохимического осаждения тонкопленочных покрытий и вакуумная установка
JPS61110772A (ja) 多層薄膜形成装置
JP3069682B2 (ja) 反応室のクリーニング方法
JP2761579B2 (ja) 基板処理装置
JPS6030182A (ja) 非晶質光起電力素子の製造装置
JPH0252422A (ja) 薄膜製造方法及び装置
JP4311222B2 (ja) 薄膜製造装置、薄膜製造方法および薄膜製造装置のクリーニング方法
JPS61256625A (ja) 薄膜半導体素子の製造方法
JP2815711B2 (ja) 薄膜半導体装置製造装置
JPS59100515A (ja) 薄膜生成装置
JP2626705B2 (ja) 被膜作製方法