JPS593785A - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JPS593785A
JPS593785A JP57111530A JP11153082A JPS593785A JP S593785 A JPS593785 A JP S593785A JP 57111530 A JP57111530 A JP 57111530A JP 11153082 A JP11153082 A JP 11153082A JP S593785 A JPS593785 A JP S593785A
Authority
JP
Japan
Prior art keywords
memory
word line
word
memory cell
blocks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57111530A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041435B2 (cg-RX-API-DMAC7.html
Inventor
Kazumori Tanimoto
谷本　和主
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57111530A priority Critical patent/JPS593785A/ja
Publication of JPS593785A publication Critical patent/JPS593785A/ja
Publication of JPH041435B2 publication Critical patent/JPH041435B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57111530A 1982-06-30 1982-06-30 半導体メモリ Granted JPS593785A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57111530A JPS593785A (ja) 1982-06-30 1982-06-30 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111530A JPS593785A (ja) 1982-06-30 1982-06-30 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS593785A true JPS593785A (ja) 1984-01-10
JPH041435B2 JPH041435B2 (cg-RX-API-DMAC7.html) 1992-01-13

Family

ID=14563672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111530A Granted JPS593785A (ja) 1982-06-30 1982-06-30 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS593785A (cg-RX-API-DMAC7.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945688A (ja) * 1982-09-09 1984-03-14 Nec Corp 半導体記憶回路
JPS5975488A (ja) * 1982-10-20 1984-04-28 Mitsubishi Electric Corp 半導体メモリ装置
JPS6120293A (ja) * 1984-07-05 1986-01-29 Mitsubishi Electric Corp 半導体メモリ装置
US4695981A (en) * 1984-12-04 1987-09-22 Hewlett-Packard Company Integrated circuit memory cell array using a segmented word line
JPS6326890A (ja) * 1987-05-21 1988-02-04 Toshiba Corp 半導体記憶装置
JPH0696580A (ja) * 1992-11-30 1994-04-08 Toshiba Corp 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55122290A (en) * 1979-03-09 1980-09-19 Mitsubishi Electric Corp Semiconductor memory device
JPS5694576A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Word decoder circuit
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置
JPS58212696A (ja) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp 半導体メモリ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55122290A (en) * 1979-03-09 1980-09-19 Mitsubishi Electric Corp Semiconductor memory device
JPS5694576A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Word decoder circuit
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置
JPS58212696A (ja) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp 半導体メモリ装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945688A (ja) * 1982-09-09 1984-03-14 Nec Corp 半導体記憶回路
JPS5975488A (ja) * 1982-10-20 1984-04-28 Mitsubishi Electric Corp 半導体メモリ装置
JPS6120293A (ja) * 1984-07-05 1986-01-29 Mitsubishi Electric Corp 半導体メモリ装置
US4695981A (en) * 1984-12-04 1987-09-22 Hewlett-Packard Company Integrated circuit memory cell array using a segmented word line
JPS6326890A (ja) * 1987-05-21 1988-02-04 Toshiba Corp 半導体記憶装置
JPH0696580A (ja) * 1992-11-30 1994-04-08 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH041435B2 (cg-RX-API-DMAC7.html) 1992-01-13

Similar Documents

Publication Publication Date Title
EP0593152A2 (en) Random access memory design
EP0227698B1 (en) Memory architecture
US7035161B2 (en) Semiconductor integrated circuit
JPH03171495A (ja) 論理アレイのビット線セグメンテーション
JPS6228516B2 (cg-RX-API-DMAC7.html)
US4951259A (en) Semiconductor memory device with first and second word line drivers
JPH07282581A (ja) 半導体記憶装置
JPH09162305A (ja) 半導体記憶装置
US5717645A (en) Random access memory with fast, compact sensing and selection architecture
US4520465A (en) Method and apparatus for selectively precharging column lines of a memory
US6366526B2 (en) Static random access memory (SRAM) array central global decoder system and method
KR970051152A (ko) 고속 버스트 리드/라이트 동작에 적합한 데이타 버스 라인 구조를 갖는 반도체 메모리 장치
US7012848B2 (en) Semiconductor integrated circuit device
JP2651948B2 (ja) 分布データライン上に負荷を配置したメモリ及びその負荷配置方法
US6788600B2 (en) Non-volatile semiconductor memory
JPS593785A (ja) 半導体メモリ
US5394354A (en) Semiconductor memory and its layout design
KR100240913B1 (ko) 반도체 메모리 시스템, 프로그래머블 어레이 및 엑세스 시간 감소 방법 및 시스템
US4797858A (en) Semiconductor memory with divided word lines and shared sense amplifiers
IT8322952A1 (it) Memoria ad accesso casuale di tipo mos
JPH07141881A (ja) 階層的ビットラインメモリアーキテクチュア
US6219296B1 (en) Multiport memory cell having a reduced number of write wordlines
EP0136819A3 (en) Semiconductor memory
JP3155893B2 (ja) 半導体記憶装置
JPH0429158B2 (cg-RX-API-DMAC7.html)