JPS5935487A - 光半導体装置の製造方法 - Google Patents

光半導体装置の製造方法

Info

Publication number
JPS5935487A
JPS5935487A JP57147360A JP14736082A JPS5935487A JP S5935487 A JPS5935487 A JP S5935487A JP 57147360 A JP57147360 A JP 57147360A JP 14736082 A JP14736082 A JP 14736082A JP S5935487 A JPS5935487 A JP S5935487A
Authority
JP
Japan
Prior art keywords
electrode layer
optical semiconductor
layer
transparent electrode
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57147360A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6213829B2 (enrdf_load_stackoverflow
Inventor
Toshiaki Yokoo
横尾　敏昭
Takashi Shibuya
澁谷　尚
Masaru Takeuchi
勝 武内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57147360A priority Critical patent/JPS5935487A/ja
Publication of JPS5935487A publication Critical patent/JPS5935487A/ja
Publication of JPS6213829B2 publication Critical patent/JPS6213829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57147360A 1982-08-24 1982-08-24 光半導体装置の製造方法 Granted JPS5935487A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57147360A JPS5935487A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147360A JPS5935487A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5935487A true JPS5935487A (ja) 1984-02-27
JPS6213829B2 JPS6213829B2 (enrdf_load_stackoverflow) 1987-03-28

Family

ID=15428435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147360A Granted JPS5935487A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5935487A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241981A (ja) * 1985-04-19 1986-10-28 Teijin Ltd 薄膜太陽電池の製造方法
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JPS6316677A (ja) * 1986-07-08 1988-01-23 Sanyo Electric Co Ltd 光起電力装置の製造方法
WO2010109567A1 (ja) * 2009-03-24 2010-09-30 富士電機ホールディングス株式会社 光電変換装置、太陽電池モジュール、及び光電変換装置の製造方法
US20120152339A1 (en) * 2010-03-18 2012-06-21 Fuji Electric Co., Ltd. Thin film solar cell and method for manufacturing same
WO2023060924A1 (zh) * 2021-10-11 2023-04-20 中国华能集团清洁能源技术研究院有限公司 一种薄膜太阳能电池结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126064U (enrdf_load_stackoverflow) * 1974-08-17 1976-02-26
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126064U (enrdf_load_stackoverflow) * 1974-08-17 1976-02-26
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JPS61241981A (ja) * 1985-04-19 1986-10-28 Teijin Ltd 薄膜太陽電池の製造方法
JPS6316677A (ja) * 1986-07-08 1988-01-23 Sanyo Electric Co Ltd 光起電力装置の製造方法
WO2010109567A1 (ja) * 2009-03-24 2010-09-30 富士電機ホールディングス株式会社 光電変換装置、太陽電池モジュール、及び光電変換装置の製造方法
US20120152339A1 (en) * 2010-03-18 2012-06-21 Fuji Electric Co., Ltd. Thin film solar cell and method for manufacturing same
WO2023060924A1 (zh) * 2021-10-11 2023-04-20 中国华能集团清洁能源技术研究院有限公司 一种薄膜太阳能电池结构及其制备方法

Also Published As

Publication number Publication date
JPS6213829B2 (enrdf_load_stackoverflow) 1987-03-28

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