JPS6213829B2 - - Google Patents

Info

Publication number
JPS6213829B2
JPS6213829B2 JP57147360A JP14736082A JPS6213829B2 JP S6213829 B2 JPS6213829 B2 JP S6213829B2 JP 57147360 A JP57147360 A JP 57147360A JP 14736082 A JP14736082 A JP 14736082A JP S6213829 B2 JPS6213829 B2 JP S6213829B2
Authority
JP
Japan
Prior art keywords
electrode layer
layer
optical semiconductor
transparent electrode
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57147360A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5935487A (ja
Inventor
Toshiaki Yokoo
Takashi Shibuya
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57147360A priority Critical patent/JPS5935487A/ja
Publication of JPS5935487A publication Critical patent/JPS5935487A/ja
Publication of JPS6213829B2 publication Critical patent/JPS6213829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57147360A 1982-08-24 1982-08-24 光半導体装置の製造方法 Granted JPS5935487A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57147360A JPS5935487A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147360A JPS5935487A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5935487A JPS5935487A (ja) 1984-02-27
JPS6213829B2 true JPS6213829B2 (enrdf_load_stackoverflow) 1987-03-28

Family

ID=15428435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147360A Granted JPS5935487A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5935487A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JPS61241981A (ja) * 1985-04-19 1986-10-28 Teijin Ltd 薄膜太陽電池の製造方法
JPH0680836B2 (ja) * 1986-07-08 1994-10-12 三洋電機株式会社 光起電力装置の製造方法
JP2012134188A (ja) * 2009-03-24 2012-07-12 Fuji Electric Co Ltd 光電変換装置、太陽電池モジュール、及び光電変換装置の製造方法
CN102612756A (zh) * 2010-03-18 2012-07-25 富士电机株式会社 薄膜太阳能电池和其制造方法
CN113745365A (zh) * 2021-10-11 2021-12-03 华能新能源股份有限公司 一种薄膜太阳能电池结构及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414223Y2 (enrdf_load_stackoverflow) * 1974-08-17 1979-06-13
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses

Also Published As

Publication number Publication date
JPS5935487A (ja) 1984-02-27

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