JPS5935420A - 半導体薄膜形成方法 - Google Patents
半導体薄膜形成方法Info
- Publication number
- JPS5935420A JPS5935420A JP14662582A JP14662582A JPS5935420A JP S5935420 A JPS5935420 A JP S5935420A JP 14662582 A JP14662582 A JP 14662582A JP 14662582 A JP14662582 A JP 14662582A JP S5935420 A JPS5935420 A JP S5935420A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor thin
- anode ring
- thin film
- crucible
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 239000010419 fine particle Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract 6
- 230000008020 evaporation Effects 0.000 claims abstract 6
- 238000004544 sputter deposition Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 5
- 239000000498 cooling water Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 12
- 238000005192 partition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14662582A JPS5935420A (ja) | 1982-08-23 | 1982-08-23 | 半導体薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14662582A JPS5935420A (ja) | 1982-08-23 | 1982-08-23 | 半導体薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935420A true JPS5935420A (ja) | 1984-02-27 |
| JPS6357938B2 JPS6357938B2 (enrdf_load_stackoverflow) | 1988-11-14 |
Family
ID=15411963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14662582A Granted JPS5935420A (ja) | 1982-08-23 | 1982-08-23 | 半導体薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935420A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60255973A (ja) * | 1984-04-12 | 1985-12-17 | プラスコ・ドクトル・エーリツヒ・プラズマ―コーテイング・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 真空中で材料を蒸発する方法および装置 |
| US5459363A (en) * | 1993-11-05 | 1995-10-17 | Hitachi, Ltd. | Rotor for dynamo electric machine |
| CN105970164A (zh) * | 2016-07-18 | 2016-09-28 | 大连维钛克科技股份有限公司 | 一种MCrALY专用超厚膜电弧靶 |
-
1982
- 1982-08-23 JP JP14662582A patent/JPS5935420A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60255973A (ja) * | 1984-04-12 | 1985-12-17 | プラスコ・ドクトル・エーリツヒ・プラズマ―コーテイング・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 真空中で材料を蒸発する方法および装置 |
| US5459363A (en) * | 1993-11-05 | 1995-10-17 | Hitachi, Ltd. | Rotor for dynamo electric machine |
| CN105970164A (zh) * | 2016-07-18 | 2016-09-28 | 大连维钛克科技股份有限公司 | 一种MCrALY专用超厚膜电弧靶 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6357938B2 (enrdf_load_stackoverflow) | 1988-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5000834A (en) | Facing targets sputtering device | |
| JP3652702B2 (ja) | プラズマ処理用線形アーク放電発生装置 | |
| TWI394196B (zh) | 離子源設備及其最佳清潔方法 | |
| US4367114A (en) | High speed plasma etching system | |
| JP5160730B2 (ja) | ビーム状プラズマ源 | |
| CN110416075A (zh) | 等离子体处理方法和等离子体处理装置 | |
| CN100542373C (zh) | 等离子体发生装置 | |
| JPS6254078A (ja) | 陰極スパツタリング処理により基板に薄層を被着する装置 | |
| CN101509126A (zh) | 一种透明导电氧化物薄膜制备设备及方法 | |
| KR19980086529A (ko) | 이온화스퍼터 방법 | |
| JP2009158416A (ja) | 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン２次電池の製造方法 | |
| KR20000048868A (ko) | 이온 주입 시스템용 아크 챔버 | |
| JPS5935420A (ja) | 半導体薄膜形成方法 | |
| JP2001230234A (ja) | プラズマ処理装置及び方法 | |
| JP2849771B2 (ja) | スパッタ型イオン源 | |
| JPH0770512B2 (ja) | 低エネルギイオン化粒子照射装置 | |
| Pompe et al. | Film deposition by laser-arcs | |
| JP2000017431A (ja) | ＭｇＯ膜形成方法およびパネル | |
| CN220224312U (zh) | 一种磁控溅射镀膜装置 | |
| CN211897094U (zh) | 一种物理溅射的硬件配置及系统 | |
| JPH11172419A (ja) | 薄膜形成装置及び薄膜形成方法 | |
| JP3210431B2 (ja) | エッチング装置 | |
| JP2000017429A (ja) | 真空成膜装置 | |
| JP2000226653A (ja) | 酸化マンガン薄膜の製造方法、及び該酸化マンガン薄膜を用いたリチウム電池 | |
| US20080087539A1 (en) | Apparatus and Method for Materials Processing with Ion-Ion Plasma |