JPS6357938B2 - - Google Patents
Info
- Publication number
- JPS6357938B2 JPS6357938B2 JP14662582A JP14662582A JPS6357938B2 JP S6357938 B2 JPS6357938 B2 JP S6357938B2 JP 14662582 A JP14662582 A JP 14662582A JP 14662582 A JP14662582 A JP 14662582A JP S6357938 B2 JPS6357938 B2 JP S6357938B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- substrate
- anode ring
- evaporated material
- semiconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14662582A JPS5935420A (ja) | 1982-08-23 | 1982-08-23 | 半導体薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14662582A JPS5935420A (ja) | 1982-08-23 | 1982-08-23 | 半導体薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935420A JPS5935420A (ja) | 1984-02-27 |
| JPS6357938B2 true JPS6357938B2 (enrdf_load_stackoverflow) | 1988-11-14 |
Family
ID=15411963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14662582A Granted JPS5935420A (ja) | 1982-08-23 | 1982-08-23 | 半導体薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935420A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3413891C2 (de) * | 1984-04-12 | 1987-01-08 | Horst Dipl.-Phys. Dr. 4270 Dorsten Ehrich | Verfahren und Vorrichtung zur Materialverdampfung in einem Vakuumbehälter |
| JP3362479B2 (ja) * | 1993-11-05 | 2003-01-07 | 株式会社日立製作所 | 回転電機の回転子 |
| CN105970164B (zh) * | 2016-07-18 | 2018-08-07 | 大连维钛克科技股份有限公司 | 一种MCrAlY专用超厚膜电弧靶 |
-
1982
- 1982-08-23 JP JP14662582A patent/JPS5935420A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5935420A (ja) | 1984-02-27 |
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