JPH0225988B2 - - Google Patents

Info

Publication number
JPH0225988B2
JPH0225988B2 JP58111849A JP11184983A JPH0225988B2 JP H0225988 B2 JPH0225988 B2 JP H0225988B2 JP 58111849 A JP58111849 A JP 58111849A JP 11184983 A JP11184983 A JP 11184983A JP H0225988 B2 JPH0225988 B2 JP H0225988B2
Authority
JP
Japan
Prior art keywords
target
electromagnet
current
substrate
discharge impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58111849A
Other languages
English (en)
Japanese (ja)
Other versions
JPS605878A (ja
Inventor
Hisaharu Obinata
Tomohisa Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP11184983A priority Critical patent/JPS605878A/ja
Publication of JPS605878A publication Critical patent/JPS605878A/ja
Publication of JPH0225988B2 publication Critical patent/JPH0225988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP11184983A 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法 Granted JPS605878A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11184983A JPS605878A (ja) 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11184983A JPS605878A (ja) 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法

Publications (2)

Publication Number Publication Date
JPS605878A JPS605878A (ja) 1985-01-12
JPH0225988B2 true JPH0225988B2 (enrdf_load_stackoverflow) 1990-06-06

Family

ID=14571701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11184983A Granted JPS605878A (ja) 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法

Country Status (1)

Country Link
JP (1) JPS605878A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1088341A (ja) * 1996-09-11 1998-04-07 Anelva Corp 低圧力放電スパッタ装置及びスパッタ制御方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008156708A (ja) * 2006-12-25 2008-07-10 Idemitsu Kosan Co Ltd 透明導電膜の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110872A (ja) * 1981-12-23 1983-07-01 Hitachi Ltd 真空排気装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1088341A (ja) * 1996-09-11 1998-04-07 Anelva Corp 低圧力放電スパッタ装置及びスパッタ制御方法

Also Published As

Publication number Publication date
JPS605878A (ja) 1985-01-12

Similar Documents

Publication Publication Date Title
US5000834A (en) Facing targets sputtering device
Window et al. Ion‐assisting magnetron sources: Principles and uses
JP2936276B2 (ja) 透明導電膜の製造方法およびその製造装置
US5830330A (en) Method and apparatus for low pressure sputtering
US4927513A (en) Method and arrangement for fabricating magneto-optical, storable, and/or deletable data carriers
US4956070A (en) Sputtering apparatus
JPH0225988B2 (enrdf_load_stackoverflow)
JPH09272973A (ja) 低圧力放電スパッタ装置
Matsuoka et al. rf and dc discharge characteristics for opposed‐targets sputtering
JPS634062A (ja) バイアススパツタ装置
JP2000273629A (ja) 低抵抗金属薄膜の形成方法
JPH0733573B2 (ja) 薄膜形成方法
JPH08302464A (ja) スパッタリングカソード及びスパッタリング装置
JPH0257144B2 (enrdf_load_stackoverflow)
JPS5943546B2 (ja) スパツタリング装置
JPH02185967A (ja) バイアススパッタリング方法およびその装置
JP4070871B2 (ja) 銅薄膜形成方法
JPH05186869A (ja) センダスト成膜方法及び装置
JPH08239763A (ja) スパッタ装置及びその調整方法
JP3392490B2 (ja) スパッタリング方法及びその装置
JP3045421B2 (ja) 磁性薄膜形成用スパッタ法及びその装置
JPH02290969A (ja) 薄膜形成装置および薄膜形成方法
KR930008340B1 (ko) 스패터링장치
JPH0888176A (ja) スパッタリング装置
Telling et al. Simple method for the control of substrate ion fluxes using an unbalanced magnetron