JPS605878A - スパツタリング装置の放電インピ−ダンス制御方法 - Google Patents

スパツタリング装置の放電インピ−ダンス制御方法

Info

Publication number
JPS605878A
JPS605878A JP11184983A JP11184983A JPS605878A JP S605878 A JPS605878 A JP S605878A JP 11184983 A JP11184983 A JP 11184983A JP 11184983 A JP11184983 A JP 11184983A JP S605878 A JPS605878 A JP S605878A
Authority
JP
Japan
Prior art keywords
target
current
substrate
discharge impedance
electromagnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11184983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0225988B2 (enrdf_load_stackoverflow
Inventor
Hisaharu Obinata
小日向 久治
Tomohisa Sawada
沢田 知久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP11184983A priority Critical patent/JPS605878A/ja
Publication of JPS605878A publication Critical patent/JPS605878A/ja
Publication of JPH0225988B2 publication Critical patent/JPH0225988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP11184983A 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法 Granted JPS605878A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11184983A JPS605878A (ja) 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11184983A JPS605878A (ja) 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法

Publications (2)

Publication Number Publication Date
JPS605878A true JPS605878A (ja) 1985-01-12
JPH0225988B2 JPH0225988B2 (enrdf_load_stackoverflow) 1990-06-06

Family

ID=14571701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11184983A Granted JPS605878A (ja) 1983-06-23 1983-06-23 スパツタリング装置の放電インピ−ダンス制御方法

Country Status (1)

Country Link
JP (1) JPS605878A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008078486A1 (ja) * 2006-12-25 2008-07-03 Idemitsu Kosan Co., Ltd. 透明導電膜の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3934709B2 (ja) * 1996-09-11 2007-06-20 キヤノンアネルバ株式会社 低圧力放電スパッタ装置及びスパッタ制御方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110872A (ja) * 1981-12-23 1983-07-01 Hitachi Ltd 真空排気装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110872A (ja) * 1981-12-23 1983-07-01 Hitachi Ltd 真空排気装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008078486A1 (ja) * 2006-12-25 2008-07-03 Idemitsu Kosan Co., Ltd. 透明導電膜の製造方法

Also Published As

Publication number Publication date
JPH0225988B2 (enrdf_load_stackoverflow) 1990-06-06

Similar Documents

Publication Publication Date Title
US5830330A (en) Method and apparatus for low pressure sputtering
Waits Planar magnetron sputtering
US6613199B1 (en) Apparatus and method for physical vapor deposition using an open top hollow cathode magnetron
JPS61221363A (ja) スパツタ装置
EP0818556A1 (en) A method for providing full-face high density plasma deposition
JPS62158863A (ja) 被膜形成装置
JPS605878A (ja) スパツタリング装置の放電インピ−ダンス制御方法
KR101113123B1 (ko) 스퍼터링 방법
CN101570851B (zh) 一种给溅射镀膜阴极施加磁场的方法
JP2000273629A (ja) 低抵抗金属薄膜の形成方法
Matsuoka et al. rf and dc discharge characteristics for opposed‐targets sputtering
JPS59173265A (ja) スパツタ装置
JPS59179784A (ja) スパツタ装置
JPS61246368A (ja) 金属膜の堆積方法
JPH024966A (ja) スパツタ装置
JPS62216637A (ja) プラズマ処理装置
JPS5943546B2 (ja) スパツタリング装置
JPH01240645A (ja) 真空蒸着装置
US20250129468A1 (en) Sputtering of high-quality superconducting thin films
JPS6127464B2 (enrdf_load_stackoverflow)
JPH0734245A (ja) スパッタリング装置
JPS6321297A (ja) 酸化亜鉛圧電結晶薄膜の製造方法
JPH07268624A (ja) 放電装置
JPS62127465A (ja) スパツタ装置
JPS62200530A (ja) 垂直磁気記録媒体の製造方法