JPH0124536B2 - - Google Patents

Info

Publication number
JPH0124536B2
JPH0124536B2 JP510882A JP510882A JPH0124536B2 JP H0124536 B2 JPH0124536 B2 JP H0124536B2 JP 510882 A JP510882 A JP 510882A JP 510882 A JP510882 A JP 510882A JP H0124536 B2 JPH0124536 B2 JP H0124536B2
Authority
JP
Japan
Prior art keywords
electrode
substrate
film
electrodes
glow discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP510882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58122038A (ja
Inventor
Yoshihiro Hamakawa
Yasunori Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP510882A priority Critical patent/JPS58122038A/ja
Publication of JPS58122038A publication Critical patent/JPS58122038A/ja
Publication of JPH0124536B2 publication Critical patent/JPH0124536B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP510882A 1982-01-16 1982-01-16 薄膜生成装置 Granted JPS58122038A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP510882A JPS58122038A (ja) 1982-01-16 1982-01-16 薄膜生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP510882A JPS58122038A (ja) 1982-01-16 1982-01-16 薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS58122038A JPS58122038A (ja) 1983-07-20
JPH0124536B2 true JPH0124536B2 (enrdf_load_stackoverflow) 1989-05-12

Family

ID=11602157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP510882A Granted JPS58122038A (ja) 1982-01-16 1982-01-16 薄膜生成装置

Country Status (1)

Country Link
JP (1) JPS58122038A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077745B2 (ja) * 1984-01-11 1995-01-30 株式会社ダイヘン 光起電力素子の製造装置
JP5282538B2 (ja) * 2008-11-18 2013-09-04 富士電機株式会社 容量結合型プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPS58122038A (ja) 1983-07-20

Similar Documents

Publication Publication Date Title
EP0200651B1 (fr) Source d'ions du type triode à une seule chambre d'ionisation à excitation haute fréquence et à confinement magnétique du type multipolaire
CN102362337B (zh) 等离子体处理装置及使用其的非晶硅薄膜的制造方法
TW201230890A (en) Plasma processing apparatus and plasma control method
EP0959151A2 (en) Thin film forming apparatus
JP3286951B2 (ja) プラズマｃｖｄ成膜方法と装置
JPH0124536B2 (enrdf_load_stackoverflow)
JP3227949B2 (ja) プラズマ処理方法及び装置
JPS627852A (ja) 薄膜形成方法
JPH02115379A (ja) 薄膜形成装置
JP2608456B2 (ja) 薄膜形成装置
JP3577785B2 (ja) イオンビーム発生装置
JPH06280030A (ja) 薄膜作成装置
JPS5855328A (ja) アモルフアスシリコンの製造方法
JPS6076751A (ja) 電子写真用感光体製造装置
JPH10251856A (ja) アモルファスシリコン膜の成膜方法及びプラズマｃｖｄ装置
JPS6339668B2 (enrdf_load_stackoverflow)
JPS62205618A (ja) プラズマｃｖｄ装置
JPS60110871A (ja) 薄膜形成装置
JPS58112045A (ja) 薄膜形成方法
JPS59139931A (ja) 蒸着装置
JPH06283436A (ja) プラズマｃｖｄ法及びプラズマｃｖｄ装置
JPH0676656B2 (ja) 高能率シートプラズマ型スパタリング装置
JPS59142841A (ja) 蒸着装置
JPH02148722A (ja) 半導体集積回路装置の製造方法
JPS60175413A (ja) プラズマｃｖｄ装置