JPS5935094A - シリコン単結晶の製造方法およびその装置 - Google Patents
シリコン単結晶の製造方法およびその装置Info
- Publication number
- JPS5935094A JPS5935094A JP14407382A JP14407382A JPS5935094A JP S5935094 A JPS5935094 A JP S5935094A JP 14407382 A JP14407382 A JP 14407382A JP 14407382 A JP14407382 A JP 14407382A JP S5935094 A JPS5935094 A JP S5935094A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- crucible
- silicon single
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 2
- 239000000377 silicon dioxide Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14407382A JPS5935094A (ja) | 1982-08-20 | 1982-08-20 | シリコン単結晶の製造方法およびその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14407382A JPS5935094A (ja) | 1982-08-20 | 1982-08-20 | シリコン単結晶の製造方法およびその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935094A true JPS5935094A (ja) | 1984-02-25 |
| JPH0310598B2 JPH0310598B2 (enrdf_load_stackoverflow) | 1991-02-14 |
Family
ID=15353648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14407382A Granted JPS5935094A (ja) | 1982-08-20 | 1982-08-20 | シリコン単結晶の製造方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935094A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030052467A (ko) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | 실리콘 잉곳 성장용 흑연 도가니 |
| KR100693917B1 (ko) | 2004-12-31 | 2007-03-12 | 주식회사 실트론 | 실리콘 단결정 |
| JP2008531444A (ja) * | 2004-02-27 | 2008-08-14 | ソーライクス・インコーポレイテッド | 単結晶シリコンにおける連続的成長用システム |
| US20100028240A1 (en) * | 2006-10-04 | 2010-02-04 | Tomohiro Shonai | Process for producing silicon carbide single crystal |
| EP2334849A4 (en) * | 2008-10-16 | 2015-06-17 | Korea Energy Research Inst | GRAFIT MELT TAG FOR ELECTROMAGNETIC SILICON INDUCTION HEATING AND SILICONE MELTING AND REFINEMENT DEVICE USING GRAFIT MELT TAG |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5678496A (en) * | 1979-11-30 | 1981-06-27 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling silicon single crystal |
| JPS5771894A (en) * | 1980-10-16 | 1982-05-04 | Toshiba Corp | Preparation of single crystal of semiconductor |
-
1982
- 1982-08-20 JP JP14407382A patent/JPS5935094A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5678496A (en) * | 1979-11-30 | 1981-06-27 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling silicon single crystal |
| JPS5771894A (en) * | 1980-10-16 | 1982-05-04 | Toshiba Corp | Preparation of single crystal of semiconductor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030052467A (ko) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | 실리콘 잉곳 성장용 흑연 도가니 |
| US8317919B2 (en) | 2003-11-03 | 2012-11-27 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| JP2008531444A (ja) * | 2004-02-27 | 2008-08-14 | ソーライクス・インコーポレイテッド | 単結晶シリコンにおける連続的成長用システム |
| KR100693917B1 (ko) | 2004-12-31 | 2007-03-12 | 주식회사 실트론 | 실리콘 단결정 |
| US20100028240A1 (en) * | 2006-10-04 | 2010-02-04 | Tomohiro Shonai | Process for producing silicon carbide single crystal |
| EP2334849A4 (en) * | 2008-10-16 | 2015-06-17 | Korea Energy Research Inst | GRAFIT MELT TAG FOR ELECTROMAGNETIC SILICON INDUCTION HEATING AND SILICONE MELTING AND REFINEMENT DEVICE USING GRAFIT MELT TAG |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0310598B2 (enrdf_load_stackoverflow) | 1991-02-14 |
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