JPS5935094A - Method and apparatus for preparation of silicon single crystal - Google Patents
Method and apparatus for preparation of silicon single crystalInfo
- Publication number
- JPS5935094A JPS5935094A JP14407382A JP14407382A JPS5935094A JP S5935094 A JPS5935094 A JP S5935094A JP 14407382 A JP14407382 A JP 14407382A JP 14407382 A JP14407382 A JP 14407382A JP S5935094 A JPS5935094 A JP S5935094A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- crucible
- silicon single
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は制御された酸素濃度を有するシリコン単結晶を
製造する方法およびその装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for producing a silicon single crystal with a controlled oxygen concentration.
一般にシリコン単結晶はC7,法圧おいては石英ガラス
製ルツボが使用され、この石英ガラスルツボ中でシリコ
ンを溶融し、種結晶を使用して引き上げられる。この際
、石英ガラスは一部溶融シリコンに溶解し、酸素がシリ
コン単結晶中に混入する。このシリコン単結晶中の酸素
濃度は融液シリコンと石英ガラスルツボの接触面積、温
度、対流の大きさ等によって決捷り、品質管理上改善が
求められていたが、こtLをコントロールすることは困
難であった。Generally, a quartz glass crucible is used for silicon single crystals at C7 and legal pressure, and silicon is melted in this quartz glass crucible and pulled using a seed crystal. At this time, a portion of the quartz glass is dissolved in the molten silicon, and oxygen is mixed into the silicon single crystal. The oxygen concentration in this silicon single crystal depends on the contact area between the molten silicon and the quartz glass crucible, the temperature, the size of convection, etc., and improvement has been required for quality control purposes, but it is impossible to control this. It was difficult.
最近、窒化珪素あるいは炭化珪素を利用したルツボを1
吏用してシリコン庁結晶を引き上げる技術が開発された
が、これらの場合シ」ルツボからの酸素混入がないため
、ソリコンウエーノ・の酸化処理あるいは拡散処理等の
熱処理に際1.2無酸素構造に伴なうウェーハのひずみ
(スリップ)が発生しやすくなり、I、Siや超I、S
I等の精密な材質であることを要求される用途において
は問題となっていた。Recently, one crucible using silicon nitride or silicon carbide has been developed.
A technique has been developed to pull up silicon crystals by using a silicon crucible, but in these cases, there is no oxygen contamination from the silicon crucible, so it is difficult to obtain a 1.2 oxygen-free structure during heat treatment such as oxidation treatment or diffusion treatment of the silicon wafer. The accompanying wafer distortion (slip) is likely to occur, and I, Si, super I, S
This has been a problem in applications that require precision materials such as I.
本発明に1−、シリコン単結晶を所定の酸素濃度とすべ
く、ノ【ツボに5I8N4あるいYi SiC質のもの
を使用し、かつ溶融シリコンに対I7必要量の酸素を融
解すべく酸化珪素を接触させるようにしたものである。In the present invention, 1-, in order to make the silicon single crystal a predetermined oxygen concentration, 5I8N4 or Yi SiC material is used for the pot, and silicon oxide is used to melt the required amount of oxygen per I7 into the molten silicon. It is designed so that they are in contact with each other.
以下に本発明の実施例を図を参照し2て1fsi’、明
する。Embodiments of the present invention will be explained below with reference to the drawings.
第1図において、1はカーボンを暴利2としその内表面
にコーティングした窒化珪素膜である。3は溶融シリコ
ン、4け引き上げつつあるシリコン単結晶である。5が
本発明にか\る装填物で第2図に示す如く、浴融シリコ
ンより比重を大きく−jるために石英ガラス外管6内に
タングステン棒1を刺入した構造を有しており、シリコ
ン融液中に沈積されている。In FIG. 1, 1 is a silicon nitride film coated with carbon on its inner surface. 3 is molten silicon, a silicon single crystal that is being pulled up by 4 times. 5 is a charge according to the present invention, and as shown in FIG. 2, it has a structure in which a tungsten rod 1 is inserted into a quartz glass outer tube 6 in order to have a higher specific gravity than bath-fused silicon. , deposited in silicon melt.
本発明のものしまこのように構成されており、溶融シリ
コンはルツボからの酸素の混入がない代りにシリコン融
液中に沈積されている石英ガラスがその表面から溶融し
、シリコン融液の酸素濃度を、ひいてはシリコン単結晶
中の酸素濃度を特定することになる。酸素濃度を制御す
るEl″i清融シリコンと接触している石英ガラスの表
面積針、温度等に比例するから、これによって必要な条
件を決定することができる。The structure of the present invention is as follows.The molten silicon is not contaminated with oxygen from the crucible, but instead the quartz glass deposited in the silicon melt melts from its surface, and the oxygen concentration of the silicon melt increases. This will ultimately determine the oxygen concentration in the silicon single crystal. El''i which controls the oxygen concentration is proportional to the surface area of the quartz glass in contact with the molten silicon, temperature, etc., and thus the necessary conditions can be determined.
第3図は石英ガラスの接触方法を第1図の場合の如く沈
積するのではなく、石英ガラス製棒状体8を上方で支持
することによって浸漬ノ”る方法を示している。溶融シ
リコンと接触する石英ガラスの面積を調節するには矢印
で示すように石英ガラス製棒状体を上下させ、あるいは
必要に応じて複数本を同時使用すノ]、ばよい。このよ
うな棒状体を使用した場合は#i融シリコンの攪拌が容
易に行なえるという利点もある。FIG. 3 shows a method of contacting quartz glass, not by depositing it as in FIG. 1, but by immersing it by supporting a quartz glass rod 8 above.It comes into contact with molten silicon. To adjust the area of the quartz glass, move the quartz glass rod up and down as shown by the arrow, or use multiple rods at the same time if necessary].When using such a rod Another advantage is that #i molten silicon can be easily stirred.
第1図ふ・よび第3図の方法によって溶融/リコン41
φから4インチシリコン中結晶を引き上げたが、石英ガ
ラスの接触表面績を50 cm”の状態に保ったま\、
シリコン単結晶を引き上げた場合におけるシリコン単結
晶の長さ方向の酸素濃度の変化する状態を第4図に示す
。参考迄に石英ガラスJLツボを使用した場合(5)お
↓びSi*N+製ルツボを使用した場合03)について
併記したが、図に示すように石英ガラスルツボを使用し
た場合は長さ方向に太きく変動するのに対し、本発明の
場合は11.とんど変化していない。一方、窒化珪素ル
ツボを使用した場合は酸素濃度が極端に低く、かつこt
’Lを増減させることはできない。Melt/recon 41 by the method shown in Figure 1 and Figure 3.
The crystal in silicon was pulled up 4 inches from φ, but the contact surface of the quartz glass was kept at 50 cm.
FIG. 4 shows how the oxygen concentration changes along the length of the silicon single crystal when the silicon single crystal is pulled. For reference, we have also listed cases (5) when using a quartz glass JL crucible and cases (03) when using a Si*N+ crucible, but as shown in the figure, when using a quartz glass crucible, the In contrast, in the case of the present invention, it is 11. It hasn't changed much. On the other hand, when using a silicon nitride crucible, the oxygen concentration is extremely low and
'L cannot be increased or decreased.
本発明のものにおいては、溶融シリコン4 ”yに対し
石英ガラスの表面積を50α2とした場合、((−’+
+ (IJl12)酸素濃度が7〜9 X ] 01
7at□(m ’)とt1\一定であり、また石英ガラ
スの表−面積を変えることによつ−Cソリコン単結晶の
長さ方向にはは■一定の!)ソ酸素濃度を8易に変化さ
せることができる。In the case of the present invention, when the surface area of quartz glass is 50α2 for molten silicon 4"y, ((-'+
+ (IJl12) Oxygen concentration is 7 to 9 X ] 01
7at□(m') and t1\\ are constant, and by changing the surface area of the quartz glass, -C is constant in the length direction of the single crystal! ) Oxygen concentration can be changed easily.
8i(−)yの粕出縫と結晶中の酸素濃度との関係を第
5 図 にンjぐ−す つ
な訃実施例においては、カーボン暴利の内表面に窒化珪
素をコーティングしたルツボを使用たが、炭化珪素をコ
ーティングしたものでも同等の効果が得られ、また窒化
珪素あるいは炭化珪素単味のもの、若しくはその複合体
からなるルツボを使用したものであってもよい。棟た酸
化珪素は石英ガラスが高純度として容易に入手しやすい
ものであるが、−酸化珪素あるいは水晶のようなもので
もよい。更に石英ガラスを溶融シリコンに接触させるに
は石英ガラスの比重が溶融シリコンより小さいため、工
夫が必要であるが、実施例の場合に限られたものではな
い。Figure 5 shows the relationship between the lees appearance of 8i(-)y and the oxygen concentration in the crystal. However, the same effect can be obtained with a crucible coated with silicon carbide, and a crucible made of silicon nitride, silicon carbide alone, or a composite thereof may also be used. The refined silicon oxide is quartz glass, which is easily available as it has a high purity, but other materials such as silicon oxide or quartz may also be used. Further, in order to bring quartz glass into contact with molten silicon, some measures are required since the specific gravity of quartz glass is smaller than that of molten silicon, but this is not limited to the case of the embodiment.
図は本発明の実施例を示し、第1図、第3図1は本発明
方法を実施する装置の概略縦断正面図、第2図は装填物
を示す概略縦断正面図、第4図はシリコン単結晶の長さ
方向の酸素濃度の変化する状態を示す図、第5図は81
09.の溶出量と結晶中の酸素濃度との関係を示す図で
あるっ1・・・窒化珪素膜 2・・・カーボン暴利3
・・・溶融シリコン 4・・・シリコン単結晶5・・
・装埴物 6・・・石英ガラス外管 1・・・り2
・グスブ゛ン棒 8・・・石英ガラス製棒状体発明者
長 島 秀 夫
発 明 者 1) 路 英 −発明者 松 尾
秀 逸
出 願 人 東芝セラミックス株式会社第1図
第4図
!R&逐J
第5図
々
)↑
020The figures show embodiments of the present invention; FIGS. 1 and 3 are schematic longitudinal sectional front views of an apparatus for carrying out the method of the invention; FIG. 2 is a schematic vertical sectional front view showing a charge; and FIG. 4 is a silicon A diagram showing changes in oxygen concentration in the length direction of a single crystal, Figure 5 is 81
09. This is a diagram showing the relationship between the amount of elution and the oxygen concentration in the crystal. 1. Silicon nitride film 2. Carbon profiteering 3.
... Molten silicon 4 ... Silicon single crystal 5 ...
・Includes 6...quartz glass outer tube 1...ri 2
・Gusubun rod 8...Quartz glass rod-shaped body Inventor: Hideo Nagashima Inventor: 1) Hideo Michi - Inventor: Hidetsu Matsuo Applicant: Toshiba Ceramics Co., Ltd. Figure 1 Figure 4! R&J 5th figure) ↑ 020
Claims (4)
Fis+cからなるルツボを使用して溶融シリコンから
シリコン単結晶を製造するに際し、ルツボ内の溶融シリ
コンに酸化珪素を接触させることを特徴とする制御さf
した酸素濃度を有するシリコン単結晶を製造する方法。(1) When producing a silicon single crystal from molten silicon using a crucible whose inner surface is made of at least SiSN4 or Fis+c, a controlled method characterized by bringing silicon oxide into contact with the molten silicon in the crucible. f
A method for producing silicon single crystals having a certain oxygen concentration.
とili、>徴とする特許請求の範囲第一項記載の方メ
ツく。(2) It is preferable that the silicon oxide is silicon monoxide or silicon dioxide.
あることを!特徴とするl持π「請求の範囲第一項記載
の方法。(3) Silicon oxide is quartz glass with lli junk inside! The method according to claim 1, characterized in that 1 and π are the same.
Cからなるルツボと、該ルツボ内に装填されるシリコ
ン原料と、該ルツボ内に装填される酸化珪素とを含むこ
とを特徴とするシリコン学結晶製造装置。(4) At least the inner surface is 5isN* or S r
1. An apparatus for producing silicon crystals, comprising: a crucible made of C, a silicon raw material charged into the crucible, and silicon oxide charged into the crucible.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14407382A JPS5935094A (en) | 1982-08-20 | 1982-08-20 | Method and apparatus for preparation of silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14407382A JPS5935094A (en) | 1982-08-20 | 1982-08-20 | Method and apparatus for preparation of silicon single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5935094A true JPS5935094A (en) | 1984-02-25 |
JPH0310598B2 JPH0310598B2 (en) | 1991-02-14 |
Family
ID=15353648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14407382A Granted JPS5935094A (en) | 1982-08-20 | 1982-08-20 | Method and apparatus for preparation of silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5935094A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030052467A (en) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | Graphite Crucible |
KR100693917B1 (en) | 2004-12-31 | 2007-03-12 | 주식회사 실트론 | Silicon single crystal |
JP2008531444A (en) * | 2004-02-27 | 2008-08-14 | ソーライクス・インコーポレイテッド | A system for continuous growth in single crystal silicon. |
US20100028240A1 (en) * | 2006-10-04 | 2010-02-04 | Tomohiro Shonai | Process for producing silicon carbide single crystal |
EP2334849A4 (en) * | 2008-10-16 | 2015-06-17 | Korea Energy Research Inst | A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678496A (en) * | 1979-11-30 | 1981-06-27 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling silicon single crystal |
JPS5771894A (en) * | 1980-10-16 | 1982-05-04 | Toshiba Corp | Preparation of single crystal of semiconductor |
-
1982
- 1982-08-20 JP JP14407382A patent/JPS5935094A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678496A (en) * | 1979-11-30 | 1981-06-27 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling silicon single crystal |
JPS5771894A (en) * | 1980-10-16 | 1982-05-04 | Toshiba Corp | Preparation of single crystal of semiconductor |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030052467A (en) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | Graphite Crucible |
US8317919B2 (en) | 2003-11-03 | 2012-11-27 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
JP2008531444A (en) * | 2004-02-27 | 2008-08-14 | ソーライクス・インコーポレイテッド | A system for continuous growth in single crystal silicon. |
KR100693917B1 (en) | 2004-12-31 | 2007-03-12 | 주식회사 실트론 | Silicon single crystal |
US20100028240A1 (en) * | 2006-10-04 | 2010-02-04 | Tomohiro Shonai | Process for producing silicon carbide single crystal |
EP2334849A4 (en) * | 2008-10-16 | 2015-06-17 | Korea Energy Research Inst | A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible |
Also Published As
Publication number | Publication date |
---|---|
JPH0310598B2 (en) | 1991-02-14 |
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