JPS5935091A - 液相エピタキシヤル成長方法 - Google Patents

液相エピタキシヤル成長方法

Info

Publication number
JPS5935091A
JPS5935091A JP57145047A JP14504782A JPS5935091A JP S5935091 A JPS5935091 A JP S5935091A JP 57145047 A JP57145047 A JP 57145047A JP 14504782 A JP14504782 A JP 14504782A JP S5935091 A JPS5935091 A JP S5935091A
Authority
JP
Japan
Prior art keywords
type
layer
epitaxial layer
growth
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57145047A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0214317B2 (enrdf_load_stackoverflow
Inventor
Toshiharu Kawabata
川端　敏治
Susumu Furuike
進 古池
Toshio Matsuda
俊夫 松田
Hitoo Iwasa
仁雄 岩佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57145047A priority Critical patent/JPS5935091A/ja
Publication of JPS5935091A publication Critical patent/JPS5935091A/ja
Publication of JPH0214317B2 publication Critical patent/JPH0214317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57145047A 1982-08-20 1982-08-20 液相エピタキシヤル成長方法 Granted JPS5935091A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57145047A JPS5935091A (ja) 1982-08-20 1982-08-20 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57145047A JPS5935091A (ja) 1982-08-20 1982-08-20 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS5935091A true JPS5935091A (ja) 1984-02-25
JPH0214317B2 JPH0214317B2 (enrdf_load_stackoverflow) 1990-04-06

Family

ID=15376152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57145047A Granted JPS5935091A (ja) 1982-08-20 1982-08-20 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS5935091A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133529A (en) * 1981-02-13 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Optical head
JPS6366739A (ja) * 1986-09-09 1988-03-25 Canon Electronics Inc 光ヘツド装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133480A (en) * 1978-04-07 1979-10-17 Toshiba Corp Growth method for liquid phase epitaxial
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133480A (en) * 1978-04-07 1979-10-17 Toshiba Corp Growth method for liquid phase epitaxial
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133529A (en) * 1981-02-13 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Optical head
JPS6366739A (ja) * 1986-09-09 1988-03-25 Canon Electronics Inc 光ヘツド装置

Also Published As

Publication number Publication date
JPH0214317B2 (enrdf_load_stackoverflow) 1990-04-06

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